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    Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
    275.
    发明授权
    Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells 有权

    公开(公告)号：US11557597B2

    公开(公告)日：2023-01-17

    申请号：US16807573

    申请日：2020-03-03

    Applicant: Micron Technology, Inc.

    Inventor： John D. Hopkins ,  Nancy M. Lomeli

    IPC: H01L27/11 ,  H01L27/11556 ,  H01L21/768 ,  G11C5/02 ,  G11C5/06 ,  H01L27/11582

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. The conductive tiers comprise metal along sides of the memory blocks. Silicon is formed between the memory blocks over the metal of the conductive tiers. The silicon and the metal react to form metal silicide therefrom that is directly against and longitudinally-along the metal of individual of the conductive tiers. After the reacting, unreacted of the silicon is removed from between the memory blocks and intervening material is formed between and longitudinally-along the memory blocks. Other embodiments, including structure independent of method, are disclosed.

    Integrated Assemblies and Methods of Forming Integrated Assemblies
    277.
    发明申请
    Integrated Assemblies and Methods of Forming Integrated Assemblies 有权

    公开(公告)号：US20220336494A1

    公开(公告)日：2022-10-20

    申请号：US17854393

    申请日：2022-06-30

    Applicant: Micron Technology, Inc.

    Inventor： Jordan D. Greenlee ,  John D. Hopkins

    IPC: H01L27/11582 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11519 ,  H01L27/11556 ,  H01L21/28 ,  H01L27/11565

    Abstract: Some embodiments include an integrated assembly having a second deck over a first deck. The first deck has first memory cell levels, and the second deck has second memory cell levels. A pair of cell-material-pillars pass through the first and second decks. Memory cells are along the first and second memory cell levels. The cell-material-pillars are a first pillar and a second pillar. An intermediate level is between the first and second decks. The intermediate level includes a region between the first and second pillars. The region includes a first segment adjacent the first pillar, a second segment adjacent the second pillar, and a third segment between the first and second segments. The first and second segments include a first composition, and the third segment includes a second composition different from the first composition. Some embodiments include methods of forming integrated assemblies.

    Integrated assemblies, and methods of forming integrated assemblies
    278.
    发明授权
    Integrated assemblies, and methods of forming integrated assemblies 有权

    公开(公告)号：US11476332B2

    公开(公告)日：2022-10-18

    申请号：US16890296

    申请日：2020-06-02

    Applicant: Micron Technology, Inc.

    Inventor： Jordan D. Greenlee ,  John D. Hopkins

    IPC: H01L29/08 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11556

    Abstract: Some embodiments include an integrated assembly having a source structure. The source structure includes, in ascending order, a first conductively-doped semiconductor material, one or more first insulative layers, a second conductively-doped semiconductor material, one or more second insulative layers, and a third conductively-doped semiconductor material. The source structure includes blocks extending through the second conductively-doped semiconductor material. Conductive levels are over the source structure. Channel material extends vertically along the conductive levels, and extends into the source structure to be in direct contact with the second conductively-doped semiconductor material. One or more memory cell materials are between the channel material and the conductive levels. Some embodiments include methods of forming integrated assemblies.

    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    279.
    发明申请
    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20220310641A1

    公开(公告)日：2022-09-29

    申请号：US17841925

    申请日：2022-06-16

    Applicant: Micron Technology, Inc.

    Inventor： John D. Hopkins ,  Nancy M. Lomeli

    IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11524

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. A stack comprising vertically-alternating first tiers and second tiers is formed above the conductor tier. The stack comprises laterally-spaced memory-block regions. Channel-material strings extend through the first tiers and the second tiers. Material of the first tiers is of different composition from material of the second tiers. Spaced insulator-material bodies are formed in and longitudinally-along opposing sides of individual of the memory-block regions in a lowest of the first tiers. After forming the spaced insulator-material bodies, conductive material is formed in the lowest first tier that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. Other embodiments, including structure independent of method, are disclosed.

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