公开(公告)号：US20080237723A1

公开(公告)日：2008-10-02

申请号：US11937677

申请日：2007-11-09

Applicant: Andy Wei ,  Anthony Mowry ,  Andreas Gehring ,  Maciej Wiatr

Inventor： Andy Wei ,  Anthony Mowry ,  Andreas Gehring ,  Maciej Wiatr

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L29/7842 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/6656 ,  H01L29/7843

Abstract: By introducing additional strain-inducing mechanisms on the basis of stress memorization techniques, the performance of NMOS transistors may be significantly increased, thereby reducing the imbalance between PMOS transistors and NMOS transistors. By amorphizing and re-crystallizing the respective material in the presence of a mask layer at various stages of the manufacturing process, a drive current improvement of up to approximately 27% has been observed, with the potential for further performance gain.

Abstract translation: 通过在应力记忆技术的基础上引入额外的应变诱导机制，可以显着增加NMOS晶体管的性能，从而减少PMOS晶体管和NMOS晶体管之间的不平衡。 通过在制造过程的不同阶段在掩模层的存在下使各种材料非晶化并再结晶，已经观察到高达约27％的驱动电流改善，具有进一步性能增益的潜力。

公开(公告)号：US20080233359A1

公开(公告)日：2008-09-25

申请号：US11909234

申请日：2006-03-22

Applicant: Claus Heinz ,  Bernhard Bauman ,  Andreas Meyer ,  Sebastien Baumont ,  Godefroy Beau ,  Andreas Gehring ,  Freddy Stoof ,  Thomas Neuhard

Inventor： Claus Heinz ,  Bernhard Bauman ,  Andreas Meyer ,  Sebastien Baumont ,  Godefroy Beau ,  Andreas Gehring ,  Freddy Stoof ,  Thomas Neuhard

IPC: B32B3/06 ,  B32B37/10

CPC classification number: B29C44/351 ,  B29C44/1209 ,  B29C44/1257 ,  B29C44/143 ,  Y10T428/233 ,  Y10T428/24488 ,  Y10T428/24496 ,  Y10T428/24777

Abstract: The invention relates to a method for the production of a component having a multipart cover layer and also to a component having a multilayer cover layer.The method according to the invention for the production of a component comprises the steps: a) insertion at least of two skins (3, 4; 20, 21; 41, 42; 81, 82) into the second tool half of a tool having a cavity-forming first tool half (1) and second tool half (2; 27; 40; 60; 80) such that the skins overlap in their end regions (5, 6; 22, 23; 43, 44; 83, 84); b) rear-foaming or rear-spraying of the skins with a foam material (7, 24) or spraying material, c) by exerting low pressure in the region of the overlap, the internally situated end region (6; 23; 44; 84) of the one skin (4; 21; 42; 82) being pressed against the externally situated end region (5; 22; 43; 83) of the other skin (3; 20; 41; 81) in a foam-tight or injection moulding-tight manner.

Abstract translation: 本发明涉及一种生产具有多部分覆盖层的部件的方法，还涉及具有多层覆盖层的部件。 根据本发明的用于制造部件的方法包括以下步骤：a）至少将两个皮肤（3,4; 20; 21; 41，42; 81,82）插入到具有 空腔形成的第一工具半部（1）和第二工具半部（2; 27; 40; 60; 80），使得所述表面在其端部区域（5,6; 22,23; 43,44; 83,84 ）; b）用泡沫材料（7,24）或喷涂材料对表皮进行后发泡或后喷涂，c）通过在重叠区域内施加低压，内部位于的端部区域（6; 23; 44; 一个皮肤（4; 21; 42; 82）被压靠在另一个皮肤（3; 20; 41; 81）的外部位于的端部区域（5; 22; 43; 83）上的泡沫密封件 或注射成型紧密的方式。

公开(公告)号：US07098564B2

公开(公告)日：2006-08-29

申请号：US10467351

申请日：2002-02-06

Applicant: Andreas Gehring ,  Roland Bohn ,  Peter Mueller

Inventor： Andreas Gehring ,  Roland Bohn ,  Peter Mueller

IPC: H02K21/26

CPC classification number: H02K15/14 ,  H02K5/15 ,  Y10T29/49

Abstract: A work piece according to the invention has caulking tabs that are connected to each other by means of a bridge piece. As a result, the caulking tabs are lengthened, thus permitting better control of the caulking process because the caulking tabs overlap a component better.

Abstract translation: 根据本发明的工件具有通过桥接件相互连接的铆接片。 结果，铆接片被延长，从而允许更好地控制铆接过程，因为填缝片更好地与部件重叠。

公开(公告)号：US08394314B2

公开(公告)日：2013-03-12

申请号：US11909234

申请日：2006-03-22

Applicant: Claus Heinz ,  Bernhard Baumann ,  Andreas Meyer ,  Sebastien Baumont ,  Godefroy Beau ,  Andreas Gehring ,  Freddy Stoof ,  Thomas Neuhard

Inventor： Claus Heinz ,  Bernhard Baumann ,  Andreas Meyer ,  Sebastien Baumont ,  Godefroy Beau ,  Andreas Gehring ,  Freddy Stoof ,  Thomas Neuhard

IPC: B29C65/00

CPC classification number: B29C44/351 ,  B29C44/1209 ,  B29C44/1257 ,  B29C44/143 ,  Y10T428/233 ,  Y10T428/24488 ,  Y10T428/24496 ,  Y10T428/24777

Abstract: A component is produced according to the following steps: a) insertion at least of two skins into the second tool half of a tool having a cavity-forming first tool half and second tool half such that the skins overlap in their end regions; b) rear-foaming or rear-spraying of the skins with a foam material or spraying material, c) by exerting low pressure in the region of the overlap, the internally situated end region of the one skin being pressed against the externally situated end region of the other skin in a foam-tight or injection molding-tight manner.

Abstract translation: 根据以下步骤制造组件：a）至少将两个表皮插入到具有空腔形成的第一工具半部和第二工具半部的工具的第二工具半部中，使得表面在其端部区域中重叠; b）用泡沫材料或喷涂材料对外皮进行后发泡或后喷，c）通过在重叠区域内施加低压，将一个皮肤的内部位于的端部区域压靠在外部位于的端部区域 的另一种皮肤以泡沫密封或注射成型紧密的方式。

公开(公告)号：US08298924B2

公开(公告)日：2012-10-30

申请号：US11866491

申请日：2007-10-03

Applicant: Maciej Wiatr ,  Frank Wirbeleit ,  Andy Wei ,  Andreas Gehring

Inventor： Maciej Wiatr ,  Frank Wirbeleit ,  Andy Wei ,  Andreas Gehring

IPC: H01L27/092 ,  H01L21/04

CPC classification number: H01L21/823864 ,  H01L21/823835 ,  H01L27/092 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7843

Abstract: By removing an outer spacer of a transistor element, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, employing a wet chemical etch process, it is possible to position a stressed contact liner layer more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region, without affecting circuit elements in the P-type regions.

Abstract translation: 通过去除用于形成高度复杂的横向掺杂剂分布的晶体管元件的外部间隔物，在形成金属硅化物之前，采用湿化学蚀刻工艺，可以将应力接触衬垫层更靠近 从而允许用于在沟道区域中产生相应应变的高效应力传递机构，而不影响P型区域中的电路元件。

公开(公告)号：US08183605B2

公开(公告)日：2012-05-22

申请号：US12791290

申请日：2010-06-01

Applicant: Thomas Feudel ,  Markus Lenski ,  Andreas Gehring

Inventor： Thomas Feudel ,  Markus Lenski ,  Andreas Gehring

IPC: H01L29/80 ,  H01L27/01 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/425

CPC classification number: H01L21/324 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41733 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7848 ,  H01L29/78621

Abstract: By recessing portions of the drain and source areas on the basis of a spacer structure, the subsequent implantation process for forming the deep drain and source regions may result in a moderately high dopant concentration extending down to the buried insulating layer of an SOI transistor. Furthermore, the spacer structure maintains a significant amount of a strained semiconductor alloy with its original thickness, thereby providing an efficient strain-inducing mechanism. By using sophisticated anneal techniques, undue lateral diffusion may be avoided, thereby allowing a reduction of the lateral width of the respective spacers and thus a reduction of the length of the transistor devices. Hence, enhanced charge carrier mobility in combination with reduced junction capacitance may be accomplished on the basis of reduced lateral dimensions.

Abstract translation: 通过基于间隔结构凹陷漏极和源极区域的部分，用于形成深漏极和源极区域的后续注入工艺可导致向下延伸到SOI晶体管的掩埋绝缘层的适度高的掺杂剂浓度。 此外，间隔结构保持大量的具有其原始厚度的应变半导体合金，从而提供有效的应变诱导机制。 通过使用复杂的退火技术，可以避免不适当的横向扩散，从而允许减小各个间隔物的横向宽度，从而减小晶体管器件的长度。 因此，可以基于减小的横向尺寸来实现增强的载流子迁移率与减少的结电容的组合。

公开(公告)号：US08129236B2

公开(公告)日：2012-03-06

申请号：US12257718

申请日：2008-10-24

Applicant: Andreas Gehring ,  Anthony Mowry ,  Andy Wei

Inventor： Andreas Gehring ,  Anthony Mowry ,  Andy Wei

IPC: H01L21/8249

CPC classification number: H01L21/26513 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7847

Abstract: After forming the outer drain and source regions of an N-channel transistor, the spacer structure may be removed on the basis of an appropriately designed etch stop layer so that a rigid material layer may be positioned more closely to the gate electrode, thereby enhancing the overall strain-inducing mechanism during a subsequent anneal process in the presence of the material layer and providing an enhanced stress memorization technique (SMT). In some illustrative embodiments, a selective SMT approach may be provided.

Abstract translation: 在形成N沟道晶体管的外部漏极和源极区域之后，可以基于适当设计的蚀刻停止层去除间隔物结构，使得刚性材料层可以更靠近栅电极定位，从而增强 在随后的退火过程中在材料层的存在下提供全面的应变诱导机制并提供增强的应力记忆技术（SMT）。 在一些说明性实施例中，可以提供选择性SMT方法。

公开(公告)号：US07754556B2

公开(公告)日：2010-07-13

申请号：US12027583

申请日：2008-02-07

Applicant: Thomas Feudel ,  Markus Lenski ,  Andreas Gehring

Inventor： Thomas Feudel ,  Markus Lenski ,  Andreas Gehring

IPC: H01L21/8238 ,  H01L21/336 ,  H01L21/425 ,  H01L29/80 ,  H01L27/10

CPC classification number: H01L21/324 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41733 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7848 ,  H01L29/78621

Abstract: By recessing portions of the drain and source areas on the basis of a spacer structure, the subsequent implantation process for forming the deep drain and source regions may result in a moderately high dopant concentration extending down to the buried insulating layer of an SOI transistor. Furthermore, the spacer structure maintains a significant amount of a strained semiconductor alloy with its original thickness, thereby providing an efficient strain-inducing mechanism. By using sophisticated anneal techniques, undue lateral diffusion may be avoided, thereby allowing a reduction of the lateral width of the respective spacers and thus a reduction of the length of the transistor devices. Hence, enhanced charge carrier mobility in combination with reduced junction capacitance may be accomplished on the basis of reduced lateral dimensions.

Abstract translation: 通过基于间隔结构凹陷漏极和源极区域的部分，用于形成深漏极和源极区域的后续注入工艺可导致向下延伸到SOI晶体管的掩埋绝缘层的适度高的掺杂剂浓度。 此外，间隔结构保持大量的具有其原始厚度的应变半导体合金，从而提供有效的应变诱导机制。 通过使用复杂的退火技术，可以避免不适当的横向扩散，从而允许减小各个间隔物的横向宽度，从而减小晶体管器件的长度。 因此，可以基于减小的横向尺寸来实现增强的载流子迁移率与减少的结电容的组合。

公开(公告)号：US20100155727A1

公开(公告)日：2010-06-24

申请号：US12716472

申请日：2010-03-03

Applicant: ANTHONY MOWRY ,  Casey Scott ,  Vassilios Papageorgiou ,  Andy Wei ,  Markus Lenski ,  Andreas Gehring

Inventor： ANTHONY MOWRY ,  Casey Scott ,  Vassilios Papageorgiou ,  Andy Wei ,  Markus Lenski ,  Andreas Gehring

IPC: H01L23/48 ,  H01L21/66

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L22/34 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

Abstract: By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished.

Abstract translation: 通过提供用于评估用于在复杂半导体器件中形成嵌入式半导体合金的图案化工艺和/或外延生长工艺的测试结构，可以实现与减少的测试时间相结合的增强的统计相关性。

公开(公告)号：US20090246926A1

公开(公告)日：2009-10-01

申请号：US12257718

申请日：2008-10-24

Applicant: Andreas Gehring ,  Anthony Mowry ,  Andy Wei

Inventor： Andreas Gehring ,  Anthony Mowry ,  Andy Wei

IPC: H01L21/336

CPC classification number: H01L21/26513 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7847

Abstract: After forming the outer drain and source regions of an N-channel transistor, the spacer structure may be removed on the basis of an appropriately designed etch stop layer so that a rigid material layer may be positioned more closely to the gate electrode, thereby enhancing the overall strain-inducing mechanism during a subsequent anneal process in the presence of the material layer and providing an enhanced stress memorization technique (SMT). In some illustrative embodiments, a selective SMT approach may be provided.

Abstract translation: 在形成N沟道晶体管的外部漏极和源极区域之后，可以基于适当设计的蚀刻停止层去除间隔物结构，使得刚性材料层可以更靠近栅电极定位，从而增强 在随后的退火过程中在材料层的存在下提供全面的应变诱导机制并提供增强的应力记忆技术（SMT）。 在一些说明性实施例中，可以提供选择性SMT方法。