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    Insulating organic polymer, organic insulating layer formed using the insulating polymer, and organic thin film transistor comprising the insulating layer
    22.
    发明申请
    Insulating organic polymer, organic insulating layer formed using the insulating polymer, and organic thin film transistor comprising the insulating layer 有权
    绝缘有机聚合物，使用绝缘聚合物形成的有机绝缘层和包含该绝缘层的有机薄膜晶体管

    公开(公告)号：US20080067503A1

    公开(公告)日：2008-03-20

    申请号：US11655181

    申请日：2007-01-19

    Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

    Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

    IPC: H01L51/10 ,  H01L51/30 ,  H01L51/40

    CPC classification number: H01L51/052 ,  C08G61/124 ,  C08G73/0611 ,  H01L51/0545

    Abstract: Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

    Abstract translation: 公开了具有侧链的绝缘有机聚合物，其能够形成具有降低的表面能的高疏水性绝缘层。 使用绝缘性有机聚合物形成的有机绝缘层的表面能的降低可能导致半导体材料的取向度的增加。 因此，绝缘有机聚合物可用于制造具有改进的特性的有机薄膜晶体管，例如降低的阈值电压和增加的电荷载流子迁移率。 还公开了使用绝缘聚合物形成的有机绝缘层，包括该绝缘层的有机薄膜晶体管及其制造方法，以及包含该有机薄膜晶体管的电子器件。

    Organic semiconductor materials using stacking-inducing compounds, compositions comprising such materials, organic semiconductor thin films formed using such compositions, and organic electronic devices incorporating such thin films
    23.
    发明申请
    Organic semiconductor materials using stacking-inducing compounds, compositions comprising such materials, organic semiconductor thin films formed using such compositions, and organic electronic devices incorporating such thin films 有权
    使用堆积诱导化合物的有机半导体材料，包含这些材料的组合物，使用这种组合物形成的有机半导体薄膜，以及掺入这种薄膜的有机电子器件

    公开(公告)号：US20070287220A1

    公开(公告)日：2007-12-13

    申请号：US11700028

    申请日：2007-01-31

    Applicant: Eun Jeong Jeong ,  Bang Lin Lee

    Inventor： Eun Jeong Jeong ,  Bang Lin Lee

    IPC: H01B1/12 ,  H01L27/01

    CPC classification number: H01L51/0036 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/1092 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0558 ,  H05B33/14 ,  Y02E10/549 ,  Y02P70/521

    Abstract: Disclosed are organic semiconductor materials, including mixtures of relatively low molecular weight aromatic ring compounds, in which at least one nitrogen atom or oxygen atom is present as a heteroatom in the aromatic ring compounds for forming hydrogen bonds between the heteroatom(s) and adjacent molecules and thereby increase intermolecular stacking. Organic semiconductor layers formed using such organic semiconductor materials will, accordingly, exhibit increased intermolecular stacking and associated improvements in one or more electrical properties of the semiconductor layer. Organic thin film transistors incorporating such organic semiconductor layers will tend to exhibit improved transistor properties including, for example, increased carrier mobility and reduced off-state leakage current. Further, the organic semiconductor layers may be manufactured using conventional room temperature processes, for example, spin coating or printing, thereby simplifying the fabrication process.

    Abstract translation: 公开了有机半导体材料，包括相对低分子量芳族环化合物的混合物，其中至少一个氮原子或氧原子作为杂原子存在于用于在杂原子和相邻分子之间形成氢键的芳族环化合物中 从而增加分子间堆叠。 因此，使用这种有机半导体材料形成的有机半导体层将表现出增加的分子间堆叠和相关的改善半导体层的一个或多个电性能。 结合这样的有机半导体层的有机薄膜晶体管倾向于表现出改善的晶体管特性，包括例如增加的载流子迁移率和减小的截止状态漏电流。 此外，可以使用常规室温工艺（例如旋涂或印刷）制造有机半导体层，从而简化制造工艺。

    Method for fabricating an organic thin film transistor
    27.
    发明授权
    Method for fabricating an organic thin film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US08114704B2

    公开(公告)日：2012-02-14

    申请号：US12379856

    申请日：2009-03-03

    Applicant: Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    Inventor： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

    IPC: H01L51/40

    CPC classification number: H01L51/0533

    Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

    Abstract translation: 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

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