Light emitting diode
    22.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号:US08896012B2

    公开(公告)日:2014-11-25

    申请号:US12943918

    申请日:2010-11-10

    Inventor: Chih-Ching Cheng

    Abstract: A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer a first electrode disposed at a bottom of the trench, wherein the first electrode includes at least one first finger, an insulating layer covering the first electrode, and a second electrode including at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.

    Abstract translation: 发光二极管包括基板,衬底上的第一半导体层,第一半导体层上方的有源层,有源层上方的第二半导体层,其中有源层位于第一半导体层和第二半导体层之间 穿过所述第二半导体层和所述有源层的沟槽,以暴露所述第一半导体层设置在所述沟槽底部的第一电极,其中所述第一电极包括至少一个第一指状物,覆盖所述第一电极的绝缘层和 所述第二电极在所述绝缘层上包括至少一个第二指状物,其中所述第二手指与所述第一手指重叠,并且所述第二手指的宽度小于所述沟槽的宽度。

    SUBSTRATE FOR FABRICATING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE FABRICATED THEREFROM
    23.
    发明申请
    SUBSTRATE FOR FABRICATING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE FABRICATED THEREFROM 审中-公开
    用于制造发光装置的基板和其制造的发光装置

    公开(公告)号:US20120258285A1

    公开(公告)日:2012-10-11

    申请号:US13527598

    申请日:2012-06-20

    Inventor: Chih-Ching Cheng

    Abstract: The invention provides a patterned substrate for fabricating a light emitting device having an improved surface structure and the light emitting device fabricated therefrom. The patterned substrate includes at least one platform region having a first facet direction for epitaxial growth; and a plurality of directly adjacent protruded portions surrounding the at least one platform region to isolate the at least one platform region from another platform region, wherein facet direction of each scattering surface of the plurality of directly adjacent protruded portions is substantially excluded from first facet direction. Since facet direction of each scattering surface of the plurality of directly adjacent protruded portions substantially do not include the first facet direction, during formation of the light emitting device, epitaxial growth is mainly conducted on the at least one platform region, which may prevent epitaxial defects from generating and enhance external quantum efficiency of the light emitting device.

    Abstract translation: 本发明提供一种用于制造具有改进的表面结构的发光器件和由其制造的发光器件的图案化衬底。 图案化衬底包括具有用于外延生长的第一小面方向的至少一个平台区域; 以及围绕所述至少一个平台区域的多个直接相邻的突出部分,以将所述至少一个平台区域与另一平台区域隔离,其中所述多个直接相邻突出部分的每个散射表面的小平面方向基本上从第一小面方向排除 。 由于多个直接相邻的突出部分的每个散射表面的面方向基本上不包括第一小面方向,所以在形成发光器件期间,外延生长主要在至少一个平台区域上进行,这可以防止外延缺陷 从产生和增强发光器件的外部量子效率。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    24.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号:US20100059773A1

    公开(公告)日:2010-03-11

    申请号:US12327367

    申请日:2008-12-03

    CPC classification number: H01L33/22 H01L33/20 H01L2933/0083

    Abstract: A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.

    Abstract translation: 半导体发光器件包括衬底,位于衬底上的第一导电类型半导体层,位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。 基板包括上表面和位于上表面上的多个突起。 每个突起包括顶表面,多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

    WAFER CARRIER AND EPITAXY MACHINE USING THE SAME
    26.
    发明申请
    WAFER CARRIER AND EPITAXY MACHINE USING THE SAME 审中-公开
    使用它的波浪载体和外延机

    公开(公告)号:US20090308319A1

    公开(公告)日:2009-12-17

    申请号:US12194013

    申请日:2008-08-19

    CPC classification number: C23C16/4585 C30B25/12

    Abstract: A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.

    Abstract translation: 晶片载体包括以分解的方式定位在基座的顶表面上的基座和屏蔽板。 基座的顶表面构造成保持多个晶片,并且屏蔽板具有暴露晶片的多个开口。 特别地,屏蔽板屏蔽除了晶片占据的其它部分之外的基底的一部分,以防止反应气体进行化学反应,直接在基底的表面上产生反应物。 因此,基底与化学反应隔离,在进行下一个制造工艺之前不需要更换基底,也不需要通过热烘烤或蚀刻来清洁基底表面上的反应物。

    Epi-structure with uneven multi-quantum well and the method thereof
    27.
    发明授权
    Epi-structure with uneven multi-quantum well and the method thereof 有权
    具有不均匀多量子阱的Epi结构及其方法

    公开(公告)号:US07498607B2

    公开(公告)日:2009-03-03

    申请号:US11798750

    申请日:2007-05-16

    Abstract: An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.

    Abstract translation: 发光装置的Epi结构,包括:在基板上形成的第一半导体导电层; 在具有多量子阱(MQW)的第一半导体导电层上形成的有源层; 以及形成在所述有源层上的第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和活性层之间被散射,以形成不均匀的多量子阱。

    LED packaged structure and applications of LED as light source
    28.
    发明申请
    LED packaged structure and applications of LED as light source 有权
    LED封装结构和应用LED作为光源

    公开(公告)号:US20080283820A1

    公开(公告)日:2008-11-20

    申请号:US11984730

    申请日:2007-11-21

    CPC classification number: H01L33/24 F21K9/27 F21Y2103/10 F21Y2115/10 H01L33/06

    Abstract: LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.

    Abstract translation: 公开了LED封装结构及其应用,其特征在于:在具有多量子阱的第一半导体导电层上形成LED或LED封装结构中的有源层; 并且在所述有源层上形成第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和有源层之间被散射,以形成不均匀的多量子阱。

    Method and product for dicing an optoelectronic semiconductor wafer
    29.
    发明申请
    Method and product for dicing an optoelectronic semiconductor wafer 有权
    用于切割光电半导体晶片的方法和产品

    公开(公告)号:US20080194080A1

    公开(公告)日:2008-08-14

    申请号:US11706822

    申请日:2007-02-13

    CPC classification number: H01L33/0095 H01L33/20 Y10T83/0304

    Abstract: A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.

    Abstract translation: 用于切割光电半导体晶片的方法具有制备光电子半导体晶片,激光划线,金刚石锯切割和形成光电子半导体管芯的步骤。 用于切割光电半导体晶片的产品具有基板和外延层。 基板具有第一表面,第二表面和两个粗糙表面。 粗糙表面通过激光​​划片晶片来形成,以在晶片上限定多个引导槽,并且金刚石锯沿着引导槽切割晶片。 在衬底的第一表面上外延地形成外延层。

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