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    Thin-film transistor comprising organic semiconductor materials
    21.
    发明授权
    Thin-film transistor comprising organic semiconductor materials 有权

    公开(公告)号：US11882710B2

    公开(公告)日：2024-01-23

    申请号：US17275547

    申请日：2019-11-19

    Applicant: Flexterra, Inc.

    Inventor： Antonio Facchetti ,  Yu Xia ,  Zhihua Chen ,  Timothy Chiu ,  Shaofeng Lu

    IPC: H10K10/46 ,  H10K85/60

    CPC classification number: H10K10/484 ,  H10K10/471 ,  H10K85/621

    Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.

    Optimization of electronic display areas
    22.
    发明授权
    Optimization of electronic display areas 有权

    公开(公告)号：US11079620B2

    公开(公告)日：2021-08-03

    申请号：US15043053

    申请日：2016-02-12

    Applicant: FLEXTERRA, INC.

    Inventor： Philippe Inagaki ,  Hjalmar Edzer Ayco Huitema

    IPC: G02F1/1333 ,  G09F9/40 ,  G09F9/30 ,  G02F1/1345 ,  H01L51/00 ,  G09G3/20 ,  G06F3/042 ,  G09F21/02 ,  H01L51/50 ,  H01L27/32

    Abstract: Techniques for optimizing the display area of an electronic display of an article include maximizing the contiguous area of the display, on one or more surfaces of the article, on which text or images may be presented to a user, and/or to minimize the area of a border of the display that is viewable to the user. Optimization techniques may include bending portions of the display, and/or minimizing the footprint of the display border by particularly configuring the electrical connections to the display elements. These optimization techniques may be applied to rigid electronic displays, to statically-flexed displays, or to dynamically flexible displays, as well as to other rigid, statically-flexed, or dynamically flexible electronic sheets of individual electronic elements, such as lighting arrays, solar cell arrays, sensor arrays, etc.

    Organic electroluminescent transistor
    30.
    发明授权
    Organic electroluminescent transistor 有权

    公开(公告)号：US10964919B2

    公开(公告)日：2021-03-30

    申请号：US15413838

    申请日：2017-01-24

    Applicant: Flexterra, Inc.

    Inventor： Viviana Biondo ,  Gianluca Generali ,  Andrea Stefani ,  Michele Muccini ,  Guido Turatti ,  Mitchell Denti ,  Hakan Usta ,  Xiaoyan Chen ,  Antonio Facchetti

    IPC: H01L51/52 ,  H01L51/00 ,  C07D495/04 ,  H01L51/05 ,  H01L51/50

    Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

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