公开(公告)号：US20060189034A1

公开(公告)日：2006-08-24

申请号：US11400526

申请日：2006-04-10

Applicant: Hiroshi Tanabe ,  Akihiko Taneda

Inventor： Hiroshi Tanabe ,  Akihiko Taneda

IPC: H01L21/48 ,  B23K26/00 ,  H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the unit of the irradiation is carried out repeatedly to process the thin film. The first and the second optical pulse have pulse waveforms different from each other. Preferably, a unit of the irradiation of the optical beam includes the a first optical pulse irradiated to the thin film and a second optical pulse irradiated to the thin film starting substantially simultaneous with the first optical pulse irradiation. In this case, the relationship between the first and the second optical pulse satisfies (the pulse width of the first optical pulse)

Abstract translation: 一种薄膜加工方法，用于通过向薄膜照射光束来处理该薄膜。 光束照射的单位包括照射到薄膜的第一和第二光脉冲，并且重复进行照射的单位以处理薄膜。 第一和第二光脉冲具有彼此不同的脉冲波形。 优选地，光束的照射单元包括照射到薄膜的第一光脉冲和基本上与第一光脉冲照射同时地发射到薄膜的第二光脉冲。 在这种情况下，第一和第二光脉冲之间的关系满足（第一光脉冲的脉冲宽度）<（第二光脉冲的光脉冲）和（第一光脉冲的照射强度）> =（ 第二光脉冲的照射强度）。 可以通过光照射形成具有小陷阱状态密度的硅薄膜。

公开(公告)号：US20060182001A1

公开(公告)日：2006-08-17

申请号：US11333554

申请日：2006-01-18

Applicant: Yoshio Isobe ,  Hiroshi Tanabe ,  Ikuo Arata

Inventor： Yoshio Isobe ,  Hiroshi Tanabe ,  Ikuo Arata

IPC: G11B7/00 ,  G11B7/135

CPC classification number: G02B7/02 ,  G02B21/02

Abstract: A solid immersion lens holder 8A is provided with a base part 50 attached to an objective lens 21, and a lens holding part 60 provided with the base part 50, extending in a direction of optical axis L of the objective lens 21, and arranged to hold a solid immersion lens 6 at an end portion thereof. The lens holding part holds the solid immersion lens so that light emerging from the solid immersion lens to the base part side travels through a region outside the lens holding part and toward the base part, and the base part has a light passing portion 53 which transmits the light toward the objective lens. Since the lens holding part extends in the direction of the optical axis L of the objective lens, even in a case where an observation object 11 is observed as located on a bottom surface of recess 13, the lens holding part will be prevented from contacting a side wall 13a of the recess. As a result, it becomes feasible to observe the observation object up to a region closer to the vicinity of peripheral part 11a of the observation object. This provides a solid immersion lens holder allowing observation up to a region closer to a peripheral part of an observation object even in a case where the observation object is set in a recess of a sample.

Abstract translation: 固体浸没透镜保持器8A设置有附接到物镜21的基部50和设置有基部50的透镜保持部60，该物镜保持部60沿着物镜21的光轴L的方向延伸，并且布置 在其端部保持固体浸没透镜6。 透镜保持部保持固体浸没透镜，使得从固体浸没透镜向基部侧露出的光穿过透镜保持部分外部的区域并朝向基部，并且基部具有透光部分53 朝向物镜的光。 由于透镜保持部在物镜的光轴L的方向上延伸，所以即使在观察对象物11位于凹部13的底面的情况下，透镜保持部也不会与 凹部的侧壁13a。 结果，观察对象直到观察对象的周边部11a附近的区域变得可行。 即使在将观察对象设置在样本的凹部中的情况下，也能够观察到靠近观察对象的周边部的区域的固体浸没透镜保持架。

公开(公告)号：US07063999B2

公开(公告)日：2006-06-20

申请号：US10275692

申请日：2001-05-10

Applicant: Hiroshi Tanabe ,  Akihiko Taneda

Inventor： Hiroshi Tanabe ,  Akihiko Taneda

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/76 ,  H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675

Abstract: A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the unit of the irradiation is carried out repeatedly to process the thin film. The first and the second optical pulse have pulse waveforms different from each other. Preferably, a unit of the irradiation of the optical beam includes the a first optical pulse irradiated to the thin film and a second optical pulse irradiated to the thin film starting substantially simultaneous with the first optical pulse irradiation. In this case, the relationship between the first and the second optical pulse satisfies (the pulse width of the first optical pulse)

Abstract translation: 一种薄膜加工方法，用于通过向薄膜照射光束来处理该薄膜。 光束照射的单位包括照射到薄膜的第一和第二光脉冲，并且重复进行照射的单位以处理薄膜。 第一和第二光脉冲具有彼此不同的脉冲波形。 优选地，光束的照射单元包括照射到薄膜的第一光脉冲和基本上与第一光脉冲照射同时发射的薄膜照射的第二光脉冲。 在这种情况下，第一和第二光脉冲之间的关系满足（第一光脉冲的脉冲宽度）<（第二光脉冲的光脉冲）和（第一光脉冲的照射强度）> =（ 第二光脉冲的照射强度）。 可以通过光照射形成具有小陷阱状态密度的硅薄膜。

公开(公告)号：US07052944B2

公开(公告)日：2006-05-30

申请号：US10311968

申请日：2001-05-25

Applicant: Hiroshi Tanabe

Inventor： Hiroshi Tanabe

IPC: H01L21/84 ,  H01L29/76

CPC classification number: H01L29/66757 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78609

Abstract: A thin-film transistor is provided which prevents the degradation of transistor characteristics due to ion channeling. A thin-film transistor (10) includes thin crystalline silicon (2) including source and drain regions (2a) and a channel region (2b), which are formed on a substrate (1); a gate insulator (3) formed on the crystalline silicon (2); and a gate electrode (4) formed on the gate insulator (3). The gate electrode (4) includes an amorphous layer (5) and a crystalline layer (6).

Abstract translation: 提供了薄膜晶体管，其防止由于离子通道引起的晶体管特性的劣化。 薄膜晶体管（10）包括形成在基板（1）上的包括源区和漏区（2a）和沟道区（2b）的薄晶体硅（2）。 形成在晶体硅（2）上的栅极绝缘体（3）; 以及形成在栅极绝缘体（3）上的栅电极（4）。 栅电极（4）包括非晶层（5）和晶体层（6）。

公开(公告)号：US20060098132A1

公开(公告)日：2006-05-11

申请号：US11242935

申请日：2005-10-05

Applicant: Kunihiro Shiota ,  Hiroshi Tanabe

Inventor： Kunihiro Shiota ,  Hiroshi Tanabe

IPC: G02F1/136

CPC classification number: G02F1/136213 ,  G02F1/136227

Abstract: A pixel circuit substrate includes a first interlayer insulating film which is made of an inorganic material at least in a source and drain regions of a thin film transistor. A contact hole is formed in an area above the source and drain regions of a thin film transistor in the first interlayer insulating film. A wiring layer is formed on the first interlayer insulating film, extends to an inner wall and a bottom surface of the contact hole. On a top surface of the wiring layer is formed a recess reflecting the shape of a contact hole. A second interlayer insulating film is formed on the wiring layer, embedded in the recess and has a flat top surface in an area above the thin film transistor. A storage capacitor on the second interlayer insulating film is disposed in the area above the thin film transistor.

Abstract translation: 像素电路基板包括至少在薄膜晶体管的源极和漏极区域中由无机材料制成的第一层间绝缘膜。 在第一层间绝缘膜中的薄膜晶体管的源区和漏区上方的区域中形成接触孔。 布线层形成在第一层间绝缘膜上，延伸到接触孔的内壁和底面。 在布线层的上表面形成反映接触孔形状的凹部。 第二层间绝缘膜形成在布线层上，嵌入凹槽中，并且在薄膜晶体管上方的区域中具有平坦的顶表面。 第二层间绝缘膜上的存储电容器设置在薄膜晶体管上方的区域中。

公开(公告)号：US20060068221A1

公开(公告)日：2006-03-30

申请号：US10525198

申请日：2003-08-26

Applicant: Akihito Saitoh ,  Mizuho Hiraoka ,  Koichi Suzuki ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Naoki Yamada ,  Chika Negishi

Inventor： Akihito Saitoh ,  Mizuho Hiraoka ,  Koichi Suzuki ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Naoki Yamada ,  Chika Negishi

IPC: H01L51/54 ,  H05B33/14

CPC classification number: H01L51/0058 ,  C09K11/06 ,  C09K2211/1003 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/005 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0094 ,  H01L51/5012 ,  H01L2251/308 ,  Y10S428/917

Abstract: To provide an organic light-emitting device that exhibits the hue of light emission having extremely high purity and has a light output having high luminance and long life with a high degree of efficiency. The organic light-emitting device comprises at least a pair of electrodes consisting of an anode and a cathode and one or more organic compound-containing layers sandwiched between the pair of electrodes, wherein at least one of the above described organic compound-containing layers contains at least one compound selected from the group consisting of the compounds represented by the following general formula [1] and at least one compound selected from the group consisting of the compounds represented by the following general formula [2].

公开(公告)号：US20060051910A1

公开(公告)日：2006-03-09

申请号：US11159097

申请日：2005-06-23

Applicant: Hiroshi Tanabe

Inventor： Hiroshi Tanabe

IPC: H01L21/44 ,  H01L21/00

CPC classification number: H01L29/66742 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13 ,  H01L28/55 ,  H01L29/6684

Abstract: Source/drain diffusion layers and a channel region are formed in a polysilicon thin film formed on a substrate made of glass or the like, and furthermore, a gate electrode 6 is formed via a gate insulating film. A silicon hydronitride film is formed on the interlayer dielectric film, whereby the hydrogen concentration in an active element region including a switching thin film transistor can be maintained at a high level, and Si—H bonds in the silicon thin film become stable. In addition, by providing a ferroelectric film on the silicon hydronitride film via a lower electrode formed of a conductive oxide film, whereby the oxygen concentration of the ferroelectric capacitive element layer can be maintained at a high level, and generation of oxygen deficiency in the ferroelectric film is prevented.

Abstract translation: 源极/漏极扩散层和沟道区域形成在由玻璃等制成的衬底上形成的多晶硅薄膜中，此外，通过栅极绝缘膜形成栅电极6。 在层间电介质膜上形成氢氧氮化硅膜，能够将含有开关薄膜晶体管的有源元件区域的氢浓度维持在高水平，硅薄膜中的Si-H键稳定。 另外，通过在导电性氧化物膜上形成的下部电极在硅氢化硅膜上设置强电介质膜，能够将铁电电容元件层的氧浓度保持在高水平，并且产生铁电体中的缺氧 电影被阻止。

公开(公告)号：US20050244670A1

公开(公告)日：2005-11-03

申请号：US10525622

申请日：2003-08-25

Applicant: Akihito Saitoh ,  Mizuho Hiraoka ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Naoki Yamada ,  Chika Negishi

Inventor： Akihito Saitoh ,  Mizuho Hiraoka ,  Akihiro Senoo ,  Hiroshi Tanabe ,  Naoki Yamada ,  Chika Negishi

IPC: H01L51/50 ,  C07C211/54 ,  C07C211/58 ,  C07C211/60 ,  C07C211/61 ,  C07C217/92 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H05B33/14

CPC classification number: H01L51/006 ,  C07C211/54 ,  C07C211/58 ,  C07C211/60 ,  C07C211/61 ,  C07C217/92 ,  C07C2603/18 ,  C07C2603/24 ,  C07C2603/26 ,  C07C2603/50 ,  C07C2603/52 ,  C09K11/06 ,  C09K2211/1003 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/004 ,  H01L51/0042 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/007 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0094 ,  Y10S428/917

Abstract: A novel monoamino compound is provided. Using the monoamino compound, an organic luminescence device is provided, which exhibits a luminescence hue with extremely high purity, and having an optical output of a high luminance with a high efficiency and a long life time. The monoamino compound is represented by the following general formula [1].

Abstract translation: 提供了一种新颖的单氨基化合物。 使用单氨基化合物，提供了具有非常高纯度的发光色调并且具有高效率和长寿命的高亮度的光输出的有机发光器件。 单氨基化合物由以下通式[1]表示。

公开(公告)号：US20050122041A1

公开(公告)日：2005-06-09

申请号：US10967355

申请日：2004-10-19

Applicant: Hiroshi Tanabe ,  Kazunori Ueno ,  Brendan Cowles

Inventor： Hiroshi Tanabe ,  Kazunori Ueno ,  Brendan Cowles

IPC: H01L51/50 ,  H01J1/62 ,  H01L51/00 ,  H05B33/14 ,  H05B33/22

CPC classification number: H01L51/5092 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0081

Abstract: There is provided an organic electroluminescent device including at least: a pair of electrodes including an anode and a cathode; one or more layers containing an organic compound interposed between the pair of electrodes; and a layer containing metallic boride provided between the cathode and one of the layers containing the organic compound. The organic electroluminescent device provides an electron injection material which has high chemical stability and is easy to control a composition of a film. The organic electroluminescent device has extremely high efficiency, a light output with high luminance, and extremely high durability.

Abstract translation: 提供了一种有机电致发光器件，至少包括：一对包括阳极和阴极的电极; 一层或多层包含置于该对电极之间的有机化合物; 以及设置在阴极和含有有机化合物的一个层之间的含有金属硼化物的层。 有机电致发光器件提供了具有高化学稳定性并且易于控制膜组成的电子注入材料。 有机电致发光器件具有非常高的效率，具有高亮度的光输出和极高的耐久性。

公开(公告)号：US06797535B2

公开(公告)日：2004-09-28

申请号：US10693395

申请日：2003-10-24

Applicant: Hiroshi Tanabe

Inventor： Hiroshi Tanabe

IPC: H01L2100

CPC classification number: H01L29/66757 ,  G02F1/13454 ,  H01L27/1281 ,  H01L29/78603 ,  H01L29/78675

Abstract: In a thin film transistor provided with a metallic layer with a light-shading property and a Si layer formed on an insulating layer, a dent for locally thinning the insulating layer is formed on a portion corresponding to a drain region. When the Si layer is recrystallized by means of a laser light irradiation, the dent serves as a crystalline nucleus formation region in order to recrystallize a particular portion earlier than other portions. Recrystallization of melted Si starts from a periphery of a bottom surface of the dent, hence a Si layer formed of a single crystal or uniformed crystal grains which serves as an active region of the TFT can be obtained.