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    METHOD AND SYSTEM FOR POWER LOAD MANAGEMENT
    24.
    发明申请
    METHOD AND SYSTEM FOR POWER LOAD MANAGEMENT 有权
    电力负荷管理方法与系统

    公开(公告)号：US20100026096A1

    公开(公告)日：2010-02-04

    申请号：US12204973

    申请日：2008-09-05

    Applicant: TUNG-JUNG YEH ,  SHENG-HSUAN PENG ,  HORNG-SHINN KO ,  WEN-TE HUNG

    Inventor： TUNG-JUNG YEH ,  SHENG-HSUAN PENG ,  HORNG-SHINN KO ,  WEN-TE HUNG

    IPC: H02J3/14

    CPC classification number: H02J3/14 ,  G05B2219/2639 ,  H02J2003/146 ,  Y02B70/3225 ,  Y02B70/3266 ,  Y04S20/222 ,  Y04S20/224 ,  Y04S20/242 ,  Y10T307/461 ,  Y10T307/469 ,  Y10T307/832

    Abstract: A method for power load management is provided in the present invention, wherein two different standard values are determined to be a basis for regulating power consumption. When power consumption exceeds a first standard value, a monitoring procedure is started to monitor consumption status. If the power consumption exceeds a second standard value, an unloading procedure is processed to reduce the power consumption of electrical devices under operation. In another embodiment, the present invention also provides a system for power load management comprising a control unit coupled to at least one electrical device and a power meter. By means of real-time recording of power consumption in the power meter, the control unit is capable of determining the power consumption status and determining whether it is necessary to unload or reload the at least one electrical device.

    Abstract translation: 在本发明中提供了一种用于功率负载管理的方法，其中两个不同的标准值被确定为用于调节功耗的基础。 当功耗超过第一标准值时，监控程序开始监控消费状态。 如果功率消耗超过第二标准值，则处理卸载程序以降低正在运行的电气设备的功率消耗。 在另一个实施例中，本发明还提供一种用于功率负载管理的系统，其包括耦合到至少一个电气设备和功率计的控制单元。 通过实时记录功率计中的功率消耗，控制单元能够确定功耗状态并确定是否需要卸载或重新加载至少一个电气设备。

    METHOD FOR FABRICATING POLYSILICON FILM, A GAS PHASE DEPOSITION APPARATUS AND AN ELECTRONIC DEVICE FORMED THEREBY
    25.
    发明申请
    METHOD FOR FABRICATING POLYSILICON FILM, A GAS PHASE DEPOSITION APPARATUS AND AN ELECTRONIC DEVICE FORMED THEREBY 有权
    制备聚硅氧烷膜的方法，气相沉积装置及其形成的电子装置

    公开(公告)号：US20090020790A1

    公开(公告)日：2009-01-22

    申请号：US12116017

    申请日：2008-05-06

    Applicant: Chih-Yuan Tseng ,  I Hsuan Peng ,  Yung-Hui Yeh ,  Jung-Jie Huang ,  Cheng-Ju Tsai

    Inventor： Chih-Yuan Tseng ,  I Hsuan Peng ,  Yung-Hui Yeh ,  Jung-Jie Huang ,  Cheng-Ju Tsai

    IPC: H01L29/80 ,  H01L21/441 ,  C23C16/54 ,  C23C16/505

    CPC classification number: H01L29/66765 ,  C23C16/24 ,  C23C16/507

    Abstract: A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.

    Abstract translation: 公开了一种在低温下直接沉积多晶硅膜的方法。 该方法包括提供衬底并执行顺序沉积工艺。 顺序沉积工艺包括第一和第二沉积步骤。 在第一沉积步骤中，向衬底施加第一偏置电压，并且利用等离子体化学气相沉积在衬底上形成第一多晶硅子层。 在第二沉积步骤中，向衬底施加第二偏置电压，并且利用等离子体化学气相沉积在第一子层上形成第二多晶硅子层。 第一和第二子层构成多晶硅膜，第一偏置电压与第二偏置电压不同。

    Double gate thin-film transistor and method for forming the same
    26.
    发明申请
    Double gate thin-film transistor and method for forming the same 审中-公开
    双栅极薄膜晶体管及其形成方法

    公开(公告)号：US20070207574A1

    公开(公告)日：2007-09-06

    申请号：US11520763

    申请日：2006-09-14

    Applicant: Liang-Tang Wang ,  Min-Chuang Wang ,  I-Hsuan Peng

    Inventor： Liang-Tang Wang ,  Min-Chuang Wang ,  I-Hsuan Peng

    IPC: H01L21/84 ,  H01L21/00

    CPC classification number: H01L29/6675 ,  H01L29/78648

    Abstract: A double-gate thin-film transistor and a method for forming the same, using low-temperature poly-silicon formed by direct deposition on a substrate so as to simplify the manufacturing process and improve the electrical characteristics. The double-gate thin-film transistor comprises: a first patterned electrode formed on a substrate; a first dielectric layer; a poly-silicon film, formed by direct deposition on the first dielectric layer so as to form between the poly-silicon film and the first dielectric layer an incubation layer comprising amorphous silicon; a pair of second patterned electrodes, formed on the poly-silicon film so as to define in the poly-silicon film and the incubation layer between the second patterned electrodes a channel region corresponding to the first patterned electrode; a second dielectric layer; and a third patterned electrode corresponding to the channel region. The method comprises steps of: providing a substrate, a first patterned electrode being formed on the substrate; forming a first dielectric layer; forming a poly-silicon film by direct deposition on the first dielectric layer so as to form between the poly-silicon film and the first dielectric layer an incubation layer comprising amorphous silicon; forming a pair of second patterned electrodes on the poly-silicon film so as to define in the poly-silicon film and the incubation layer between the second patterned electrodes a channel region corresponding to the first patterned electrode; forming a second dielectric layer; and forming a third patterned electrode corresponding to the channel region.

    Abstract translation: 一种双栅极薄膜晶体管及其制造方法，使用通过直接沉积形成在基板上的低温多晶硅，以简化制造工艺并提高电气特性。 双栅极薄膜晶体管包括：形成在衬底上的第一图案化电极; 第一电介质层; 通过直接沉积在所述第一介电层上形成多晶硅膜，以在所述多硅膜和所述第一介电层之间形成包含非晶硅的温育层; 形成在所述多晶硅膜上的一对第二图案化电极，以在所述多晶硅膜中限定所述第二图案化电极与所述第一图案化电极对应的沟道区域之间的温育层; 第二电介质层; 以及对应于沟道区的第三图案化电极。 该方法包括以下步骤：提供衬底，形成在衬底上的第一图案化电极; 形成第一电介质层; 通过直接沉积在所述第一介电层上形成多晶硅膜，以在所述多晶硅膜和所述第一介电层之间形成包含非晶硅的温育层; 在所述多晶硅膜上形成一对第二图案化电极，以在所述多晶硅膜中限定所述第二图案化电极与所述第一图案化电极对应的沟道区域之间的温育层; 形成第二电介质层; 以及形成对应于沟道区的第三图案化电极。

    Antenna connection module
    28.
    发明授权
    Antenna connection module 有权
    天线连接模块

    公开(公告)号：US06879302B2

    公开(公告)日：2005-04-12

    申请号：US10644763

    申请日：2003-08-21

    Applicant: Po-Hsuan Peng

    Inventor： Po-Hsuan Peng

    IPC: H01Q1/12 ,  H01Q1/50

    CPC classification number: H01Q1/12 ,  H01Q1/50

    Abstract: An antenna connection module adopted for use on electronic devices has an anchoring and rotary structure to provide discrete and staged positioning. It includes a rotary tray, which has a plurality of anchor troughs formed thereon, and an antenna dock coupled with the rotary tray to turn relative to the rotary tray without separating. The antenna dock houses rolling balls that engage with the anchor troughs to provide discrete and staged clicking and anchoring effects.

    Abstract translation: 在电子设备上使用的天线连接模块具有锚定和旋转结构，以提供离散和分段定位。 它包括一个转盘，它具有形成在其上的多个锚定槽，以及一个与转盘相连的天线基座，以便相对于旋转托盘转动而不分离。 天线底座容纳与锚槽接合的滚珠，以提供离散和分阶段的点击和锚固效果。

    Stopping mechanism
    30.
    发明授权
    Stopping mechanism 有权
    停机机制

    公开(公告)号：US09098255B2

    公开(公告)日：2015-08-04

    申请号：US13243997

    申请日：2011-09-23

    Applicant: Po-Hsuan Peng

    Inventor： Po-Hsuan Peng

    IPC: H05K5/00 ,  G06F1/18 ,  G06F1/16 ,  G11B33/12

    CPC classification number: G06F1/187 ,  G06F1/1658 ,  G11B33/124 ,  Y10T74/20636

    Abstract: A stopping mechanism is disposed on a machine body and a removable device. The stopping mechanism includes a rectilinearly moving action member, a rotationally moving clipping member, and a stopping member fixedly disposed on the machine body, in which the action member pushes and presses against the clipping member so that the clipping member rotates to a holder position. The action member presses against the stopping member fixedly disposed on the machine body through a tilt angle relation at the holder position, so that an accelerating force generated by the removable device under impact is transferred to the machine body, thus dispersing the impact force.

    Abstract translation: 在机体和可移动装置上设置止动机构。 该止动机构包括直线移动作用部件，旋转移动的夹持部件和固定地设置在机体上的止动部件，动作部件推压并压靠在夹持部件上，使得夹持部件转动到保持器位置。 动作构件通过在保持器位置处的倾斜角关系压靠固定地设置在机体上的止动构件，使得由冲击下的可移除装置产生的加速力传递到机体，从而分散冲击力。

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