公开(公告)号：US20070207574A1

公开(公告)日：2007-09-06

申请号：US11520763

申请日：2006-09-14

申请人： Liang-Tang Wang ,  Min-Chuang Wang ,  I-Hsuan Peng

发明人： Liang-Tang Wang ,  Min-Chuang Wang ,  I-Hsuan Peng

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/6675 ,  H01L29/78648

摘要： A double-gate thin-film transistor and a method for forming the same, using low-temperature poly-silicon formed by direct deposition on a substrate so as to simplify the manufacturing process and improve the electrical characteristics. The double-gate thin-film transistor comprises: a first patterned electrode formed on a substrate; a first dielectric layer; a poly-silicon film, formed by direct deposition on the first dielectric layer so as to form between the poly-silicon film and the first dielectric layer an incubation layer comprising amorphous silicon; a pair of second patterned electrodes, formed on the poly-silicon film so as to define in the poly-silicon film and the incubation layer between the second patterned electrodes a channel region corresponding to the first patterned electrode; a second dielectric layer; and a third patterned electrode corresponding to the channel region. The method comprises steps of: providing a substrate, a first patterned electrode being formed on the substrate; forming a first dielectric layer; forming a poly-silicon film by direct deposition on the first dielectric layer so as to form between the poly-silicon film and the first dielectric layer an incubation layer comprising amorphous silicon; forming a pair of second patterned electrodes on the poly-silicon film so as to define in the poly-silicon film and the incubation layer between the second patterned electrodes a channel region corresponding to the first patterned electrode; forming a second dielectric layer; and forming a third patterned electrode corresponding to the channel region.

摘要翻译： 一种双栅极薄膜晶体管及其制造方法，使用通过直接沉积形成在基板上的低温多晶硅，以简化制造工艺并提高电气特性。 双栅极薄膜晶体管包括：形成在衬底上的第一图案化电极; 第一电介质层; 通过直接沉积在所述第一介电层上形成多晶硅膜，以在所述多硅膜和所述第一介电层之间形成包含非晶硅的温育层; 形成在所述多晶硅膜上的一对第二图案化电极，以在所述多晶硅膜中限定所述第二图案化电极与所述第一图案化电极对应的沟道区域之间的温育层; 第二电介质层; 以及对应于沟道区的第三图案化电极。 该方法包括以下步骤：提供衬底，形成在衬底上的第一图案化电极; 形成第一电介质层; 通过直接沉积在所述第一介电层上形成多晶硅膜，以在所述多晶硅膜和所述第一介电层之间形成包含非晶硅的温育层; 在所述多晶硅膜上形成一对第二图案化电极，以在所述多晶硅膜中限定所述第二图案化电极与所述第一图案化电极对应的沟道区域之间的温育层; 形成第二电介质层; 以及形成对应于沟道区的第三图案化电极。

公开(公告)号：US20070105373A1

公开(公告)日：2007-05-10

申请号：US11270862

申请日：2005-11-09

申请人： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

发明人： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

IPC分类号： H01L21/44

CPC分类号： H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0262 ,  H01L27/1214

摘要： A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.

摘要翻译： 一种在等离子体辅助化学气相沉积（CVD）系统中形成多晶硅膜的方法，包括：设置有与第一电极间隔开的第一电极和第二电极的腔室，包括在第二电极上设置衬底， 包括暴露于第一电极的表面，向第一电极施加第一功率以在腔室中产生等离子体，在用于离子轰击衬底表面的多晶硅膜的成核阶段期间向第二电极施加第二功率， 并将侵蚀性气体流入室内。

公开(公告)号：US07521341B2

公开(公告)日：2009-04-21

申请号：US11270862

申请日：2005-11-09

申请人： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

发明人： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

IPC分类号： H01L21/36

CPC分类号： H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0262 ,  H01L27/1214

摘要： A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.

摘要翻译： 一种在等离子体辅助化学气相沉积（CVD）系统中形成多晶硅膜的方法，包括：设置有与第一电极间隔开的第一电极和第二电极的腔室，包括在第二电极上设置衬底， 包括暴露于第一电极的表面，向第一电极施加第一功率以在腔室中产生等离子体，在用于离子轰击衬底表面的多晶硅膜的成核阶段期间，向第二电极施加第二功率， 并将侵蚀性气体流入室内。

公开(公告)号：US20070077735A1

公开(公告)日：2007-04-05

申请号：US11395215

申请日：2006-04-03

申请人： I-Hsuan Peng ,  Chin-Jen Huang ,  Liang-Tang Wang ,  Jung-Fang Chang ,  Te-Chi Wong

发明人： I-Hsuan Peng ,  Chin-Jen Huang ,  Liang-Tang Wang ,  Jung-Fang Chang ,  Te-Chi Wong

IPC分类号： H01L21/20

CPC分类号： C30B25/105 ,  C23C16/24 ,  C23C16/507 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02667 ,  H01L27/1281 ,  H01L27/1285

摘要： A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.

摘要翻译： 低温多晶硅薄膜元件，通过在低温下直接沉积制造多晶硅薄膜的方法，以及所用的电感耦合等离子体化学气相沉积设备，其中所述多晶硅材料被诱导结晶成聚 硅薄膜在低温下通过高密度等离子体和衬底偏置电压。 此外，通过利用具有接近于硅的最佳取向和晶格常数的感应层，多数硅薄膜的原子结构以规则的排列排列，从而提高多晶硅薄膜的结晶质量， 减少孵育层的厚度。

公开(公告)号：US07045441B2

公开(公告)日：2006-05-16

申请号：US10628893

申请日：2003-07-28

申请人： Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

发明人： Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

IPC分类号： H01L21/762 ,  H01L23/15

CPC分类号： B32B37/00 ,  B32B2310/0825 ,  B32B2311/02 ,  B32B2315/08 ,  C03C27/046 ,  H01L2224/83192 ,  Y10S438/977

摘要： A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

摘要翻译： 在透明基板上形成单晶硅层的方法。 提供其上形成有非晶硅层的透明基板和其中形成有氢离子层的硅晶片。 然后将硅晶片反转并层压到非晶硅层上，使得单晶硅层位于氢离子层和非晶硅层之间。 然后对层压硅晶片和非晶硅层进行激光或红外光以使单晶硅层和非晶硅层发生化学键合，并引起加氢裂化反应，从而将硅晶片和透明基板分离 氢离子层，并在透明基板上留下单晶硅层。

公开(公告)号：US20060258064A1

公开(公告)日：2006-11-16

申请号：US11479895

申请日：2006-06-30

申请人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

发明人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

公开(公告)号：US20050074930A1

公开(公告)日：2005-04-07

申请号：US10733721

申请日：2003-12-11

申请人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

发明人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

摘要翻译： 描述形成多晶硅薄膜晶体管的方法。 在基板上形成非晶硅薄膜晶体管，然后使用红外（IR）加热工艺。 栅极金属和源极/漏极金属被快速加热，并将热能传导到非晶硅层。 接下来，在非晶硅层中发生结晶以形成多晶硅。 因此，制造多晶硅薄膜晶体管。

公开(公告)号：US07361566B2

公开(公告)日：2008-04-22

申请号：US11479895

申请日：2006-06-30

申请人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

发明人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

摘要翻译： 描述形成多晶硅薄膜晶体管的方法。 在基板上形成非晶硅薄膜晶体管，然后使用红外（IR）加热工艺。 栅极金属和源极/漏极金属被快速加热，并将热能传导到非晶硅层。 接下来，在非晶硅层中发生结晶以形成多晶硅。 因此，制造多晶硅薄膜晶体管。

公开(公告)号：US07094656B2

公开(公告)日：2006-08-22

申请号：US10733721

申请日：2003-12-11

申请人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

发明人： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

IPC分类号： H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

摘要翻译： 描述形成多晶硅薄膜晶体管的方法。 在基板上形成非晶硅薄膜晶体管，然后使用红外（IR）加热工艺。 栅极金属和源极/漏极金属被快速加热，并将热能传导到非晶硅层。 接下来，在非晶硅层中发生结晶以形成多晶硅。 因此，制造多晶硅薄膜晶体管。