Backlight unit and liquid crystal display device using the same
    21.
    发明授权
    Backlight unit and liquid crystal display device using the same 失效
    背光单元和使用其的液晶显示装置

    公开(公告)号:US07520653B2

    公开(公告)日:2009-04-21

    申请号:US11636579

    申请日:2006-12-11

    Applicant: Jeong-Hun Han

    Inventor: Jeong-Hun Han

    Abstract: A backlight unit includes a lamp to generate and radiate an ultraviolet ray, a light guide plate including a light receiving portion to receive the ultraviolet ray, an optical sheet disposed on the light guide plate to change the ultraviolet ray into a visible ray, the optical sheet including a fluorescent material, and a reflective sheet arranged under the light guide plate.

    Abstract translation: 背光单元包括产生并辐射紫外线的灯,包括接收紫外线的光接收部的导光板,设置在导光板上以将紫外线变为可见光的光学片,光学 包括荧光材料的片材和布置在导光板下方的反射片材。

    Floating gate of flash memory device and method of forming the same
    22.
    发明授权
    Floating gate of flash memory device and method of forming the same 失效
    闪存装置的浮栅及其形成方法

    公开(公告)号:US07507626B2

    公开(公告)日:2009-03-24

    申请号:US11647021

    申请日:2006-12-27

    Applicant: Chang Hun Han

    Inventor: Chang Hun Han

    CPC classification number: H01L29/42324 H01L21/28273

    Abstract: Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface.

    Abstract translation: 公开了一种闪存器件的浮动栅极,其中在半导体衬底上形成隧道氧化物层,并且浮栅形成为具有凸顶表面的透镜的形状。

    Method for manufacturing capacitor for semiconductor device
    23.
    发明授权
    Method for manufacturing capacitor for semiconductor device 有权
    制造用于半导体器件的电容器的方法

    公开(公告)号:US07494863B2

    公开(公告)日:2009-02-24

    申请号:US11485361

    申请日:2006-07-13

    Applicant: Chang Hun Han

    Inventor: Chang Hun Han

    Abstract: Disclosed is a method for manufacturing a capacitor in a semiconductor device. A method consistent with the present invention includes forming a lower electrode on a semiconductor substrate; forming a first interlevel dielectric layer on an entire surface of the semiconductor substrate, covering the lower electrode; selectively removing the first interlevel dielectric layer to form an opening exposing a surface of the lower electrode; sequentially forming a dielectric layer and a conductive layer over the entire surface of the semiconductor substrate including the opening; planarizing the conductive layer to form an upper electrode in the opening; and forming a second interlevel dielectric layer over the entire surface of the semiconductor substrate including the upper electrode.

    Abstract translation: 公开了一种在半导体器件中制造电容器的方法。 符合本发明的方法包括在半导体衬底上形成下电极; 在所述半导体衬底的整个表面上形成第一层间电介质层,覆盖所述下电极; 选择性地去除所述第一层间电介质层以形成暴露所述下电极的表面的开口; 在包括该开口的半导体衬底的整个表面上依次形成介电层和导电层; 平面化导电层以在开口中形成上电极; 以及在包括上电极的半导体衬底的整个表面上形成第二层间电介质层。

    Liquid crystal display device with resin black matrix having polarizing function
    24.
    发明授权
    Liquid crystal display device with resin black matrix having polarizing function 有权
    具有树脂黑色矩阵的液晶显示装置具有极化功能

    公开(公告)号:US07433001B2

    公开(公告)日:2008-10-07

    申请号:US11367728

    申请日:2006-03-03

    Abstract: Disclosed is a liquid crystal display (LCD) device equipped with a resin black matrix, capable of preventing the light leakage phenomenon by improving an OD (optical density) value of the resin black matrix. The LCD device includes an array substrate formed with a thin film transistor and a pixel electrode, a color filter substrate aligned opposite to the array substrate and formed with a resin black matrix and a color filter, a liquid crystal layer aligned between the array substrate and the color filter substrate, and lower and upper polarizing plates attached to outer surfaces of the array substrate and the color substrate and having transmission axes extending in the same direction. The resin black matrix has a transmission axis perpendicular to the transmission axes of the lower and upper polarizing plates so that the resin black matrix has a polarizing function.

    Abstract translation: 公开了一种配备有树脂黑矩阵的液晶显示器(LCD)装置,其能够通过改善树脂黑矩阵的OD(光密度)值来防止漏光现象。 LCD装置包括形成有薄膜晶体管和像素电极的阵列基板,与阵列基板相对排列并形成有树脂黑矩阵和滤色器的滤色器基板,排列在阵列基板和阵列基板之间的液晶层 滤色器基板,以及安装在阵列基板和彩色基板的外表面上并具有沿相同方向延伸的透射轴的下偏振板和上偏振板。 树脂黑矩阵具有垂直于下偏振板和上偏振板的透射轴的透射轴,使得树脂黑矩阵具有偏振功能。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
    25.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 失效
    图像传感器及其制造方法

    公开(公告)号:US20080224188A1

    公开(公告)日:2008-09-18

    申请号:US12046114

    申请日:2008-03-11

    Applicant: Chang-Hun Han

    Inventor: Chang-Hun Han

    Abstract: An apparatus that can effectively operate in high temperatures including a CMOS image sensor, a thermoelectric semiconductor formed under the CMOS image sensor for selectively cooling the image sensor and a heat sink formed under the thermoelectric semiconductor.

    Abstract translation: 可以在高温下有效地操作的装置,包括CMOS图像传感器,形成在CMOS图像传感器下方的用于选择性地冷却图像传感器的热电半导体和形成在热电半导体下的散热器。

    Image sensor and fabricating method thereof
    26.
    发明申请
    Image sensor and fabricating method thereof 审中-公开
    图像传感器及其制造方法

    公开(公告)号:US20080156970A1

    公开(公告)日:2008-07-03

    申请号:US12001652

    申请日:2007-12-11

    Abstract: The present invention provides an image sensor, and methods of manufacturing the same, that includes a color filter layer on a semiconductor substrate, and a microlens array on the color filter layer, in which the microlens includes a transparent conductive layer.

    Abstract translation: 本发明提供了一种图像传感器及其制造方法,其包括半导体衬底上的滤色器层和滤色器层上的微透镜阵列,其中微透镜包括透明导电层。

    Thermal image forming apparatus
    28.
    发明授权
    Thermal image forming apparatus 失效
    热成像装置

    公开(公告)号:US07367726B2

    公开(公告)日:2008-05-06

    申请号:US11207881

    申请日:2005-08-22

    CPC classification number: B41J11/04 B41J3/60

    Abstract: A thermal image forming apparatus includes a platen roller which supports a medium, a print head, including a heating unit which applies heat to the medium to form an image thereon, which rotates around the platen roller and moves the heating unit to a first location facing a first surface of the medium and a second location facing a second surface of the medium, and a restricting element which rotates together with the print head. The restricting element restricts the movement of the platen roller in a transport direction of the medium so that the heating unit is placed at a printing nip formed by the platen roller and the print head when the print head is located at the first and second locations.

    Abstract translation: 热图像形成装置包括支撑介质的压纸辊,打印头,包括加热单元,该加热单元向介质施加热量以在其上形成图像,所述加热单元绕压纸辊旋转,并将加热单元移动到面对 介质的第一表面和面向介质的第二表面的第二位置,以及与打印头一起旋转的限制元件。 限制元件限制压纸辊在介质输送方向上的移动,使得当打印头位于第一和第二位置时,加热单元被放置在由压纸辊和打印头形成的打印压区。

    Image Sensor and Method for Manufacturing the Same
    29.
    发明申请
    Image Sensor and Method for Manufacturing the Same 失效
    图像传感器及其制造方法

    公开(公告)号:US20080042228A1

    公开(公告)日:2008-02-21

    申请号:US11839236

    申请日:2007-08-15

    Applicant: CHANG HUN HAN

    Inventor: CHANG HUN HAN

    CPC classification number: H01L27/14685 H01L27/14621 H01L27/14623

    Abstract: An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An interlayer dielectric layer has a first thickness in the active region and a second thickness thinner than the first thickness in the peripheral region. Color filters are disposed in the active region, and a light blocking member is disposed in the peripheral region. There is substantially no step difference between the color filters and the light blocking member.

    Abstract translation: 提供了图像传感器及其制造方法。 图像传感器包括设置在有源区域中的多个像素和设置在周边区域中的虚拟像素。 层间绝缘层在有源区具有第一厚度,在周边区具有比第一厚度薄的第二厚度。 彩色滤光片设置在有源区域中,并且遮光构件设置在周边区域中。 滤色器和遮光构件之间基本上没有差别。

    CMOS image sensor and method for manufacturing the same

    公开(公告)号:US07217967B2

    公开(公告)日:2007-05-15

    申请号:US10746980

    申请日:2003-12-23

    Applicant: Chang Hun Han

    Inventor: Chang Hun Han

    CPC classification number: H01L27/14609 H01L27/14603 H01L27/1463

    Abstract: A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the same laminate structure as the gates of the transistors. Impurities for a diffusion region of the photodiode are ion-implanted into the active region for the photodiode, after the laminate structure is formed. The passivation layer prevents the edge portion from being damaged by ion implantation at the boundary or interface between the photodiode diffusion region and an isolation layer, which reduces dark current and/or leakage current of the CMOS image sensor.

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