Abstract:
A backlight unit includes a lamp to generate and radiate an ultraviolet ray, a light guide plate including a light receiving portion to receive the ultraviolet ray, an optical sheet disposed on the light guide plate to change the ultraviolet ray into a visible ray, the optical sheet including a fluorescent material, and a reflective sheet arranged under the light guide plate.
Abstract:
Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface.
Abstract:
Disclosed is a method for manufacturing a capacitor in a semiconductor device. A method consistent with the present invention includes forming a lower electrode on a semiconductor substrate; forming a first interlevel dielectric layer on an entire surface of the semiconductor substrate, covering the lower electrode; selectively removing the first interlevel dielectric layer to form an opening exposing a surface of the lower electrode; sequentially forming a dielectric layer and a conductive layer over the entire surface of the semiconductor substrate including the opening; planarizing the conductive layer to form an upper electrode in the opening; and forming a second interlevel dielectric layer over the entire surface of the semiconductor substrate including the upper electrode.
Abstract:
Disclosed is a liquid crystal display (LCD) device equipped with a resin black matrix, capable of preventing the light leakage phenomenon by improving an OD (optical density) value of the resin black matrix. The LCD device includes an array substrate formed with a thin film transistor and a pixel electrode, a color filter substrate aligned opposite to the array substrate and formed with a resin black matrix and a color filter, a liquid crystal layer aligned between the array substrate and the color filter substrate, and lower and upper polarizing plates attached to outer surfaces of the array substrate and the color substrate and having transmission axes extending in the same direction. The resin black matrix has a transmission axis perpendicular to the transmission axes of the lower and upper polarizing plates so that the resin black matrix has a polarizing function.
Abstract:
An apparatus that can effectively operate in high temperatures including a CMOS image sensor, a thermoelectric semiconductor formed under the CMOS image sensor for selectively cooling the image sensor and a heat sink formed under the thermoelectric semiconductor.
Abstract:
The present invention provides an image sensor, and methods of manufacturing the same, that includes a color filter layer on a semiconductor substrate, and a microlens array on the color filter layer, in which the microlens includes a transparent conductive layer.
Abstract:
An electronic device with a reworkable electronic component, a method of manufacturing the electronic device, and a method of reworking the electronic component are disclosed. The electronic device includes a first cavity provided in a board body. A first metal pattern is provided on the board body and adjacent to the first cavity. A first electronic component is provided in the first cavity. A first connection pattern is provided adjacent to an upper edge portion of the first electronic component and extends to the first metal pattern so that the first metal pattern is electrically connected to the first electronic component.
Abstract:
A thermal image forming apparatus includes a platen roller which supports a medium, a print head, including a heating unit which applies heat to the medium to form an image thereon, which rotates around the platen roller and moves the heating unit to a first location facing a first surface of the medium and a second location facing a second surface of the medium, and a restricting element which rotates together with the print head. The restricting element restricts the movement of the platen roller in a transport direction of the medium so that the heating unit is placed at a printing nip formed by the platen roller and the print head when the print head is located at the first and second locations.
Abstract:
An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An interlayer dielectric layer has a first thickness in the active region and a second thickness thinner than the first thickness in the peripheral region. Color filters are disposed in the active region, and a light blocking member is disposed in the peripheral region. There is substantially no step difference between the color filters and the light blocking member.
Abstract:
A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the same laminate structure as the gates of the transistors. Impurities for a diffusion region of the photodiode are ion-implanted into the active region for the photodiode, after the laminate structure is formed. The passivation layer prevents the edge portion from being damaged by ion implantation at the boundary or interface between the photodiode diffusion region and an isolation layer, which reduces dark current and/or leakage current of the CMOS image sensor.