公开(公告)号：US20050124150A1

公开(公告)日：2005-06-09

申请号：US11003926

申请日：2004-12-03

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/8242 ,  H01L21/302

CPC classification number: H01L21/02164 ,  H01L21/02274 ,  H01L21/3165 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a semiconductor device fabrication method, which includes forming an inter metal dielectric on a semiconductor substrate having wirings and planarizing the inter metal dielectric through a chemical mechanical polishing, wherein the inter metal dielectric is formed by carrying out at least one cycle of depositing polycrystalline silicon, plasma-processing the polycrystalline silicon, and oxidizing the polycrystalline silicon.

Abstract translation: 本发明涉及一种半导体器件制造方法，其包括在具有布线的半导体衬底上形成金属间电介质，并通过化学机械抛光使金属间电介质平坦化，其中通过进行至少一个周期形成金属间电介质 沉积多晶硅，等离子体处理多晶硅，并氧化多晶硅。

公开(公告)号：US20050023698A1

公开(公告)日：2005-02-03

申请号：US10902903

申请日：2004-07-30

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/44

CPC classification number: H01L23/53223 ,  H01L21/76838 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate and metal wiring formed by alternately depositing aluminum layers and copper layers on the semiconductor substrate so that a top layer of the metal wiring is an aluminum layer. The metal wiring is fabricated by alternately depositing an aluminum layer and a copper layer on a semiconductor substrate a predetermined number of times to form a metal wiring layer having an aluminum top layer. A photoresist film pattern is formed on the metal wiring layer and metal wiring is formed by performing an etching process on the metal wiring layer using the photoresist film pattern as a mask.

Abstract translation: 半导体器件包括半导体衬底和通过在半导体衬底上交替沉积铝层和铜层而形成的金属布线，使得金属布线的顶层是铝层。 通过在半导体基板上交替沉积铝层和铜层预定次数来制造金属布线，以形成具有铝顶层的金属布线层。 在金属布线层上形成光致抗蚀剂图案，并且通过使用光致抗蚀剂膜图案作为掩模对金属布线层进行蚀刻处理来形成金属布线。

公开(公告)号：US06657299B2

公开(公告)日：2003-12-02

申请号：US10304697

申请日：2002-11-27

Applicant: Jae Suk Lee ,  Seung Hyun Kim

Inventor： Jae Suk Lee ,  Seung Hyun Kim

IPC: H01L2348

CPC classification number: H01L21/76888 ,  H01L21/31683 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/3171 ,  H01L23/53214 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A surface of a metal wiring formed over a portion of a substrate is oxidized and annealed to generate a stress reduction layer. Then a passsivation layer is deposited over the stress reduction layer and the remaining portions of the substrate so that a semiconductor with the stress reduction layer may be formed.

Abstract translation: 在基板的一部分上形成的金属布线的表面被氧化并退火以产生应力减小层。 然后将钝化层沉积在应力减小层和基板的其余部分上，以便可形成具有应力减小层的半导体。

公开(公告)号：US06569978B2

公开(公告)日：2003-05-27

申请号：US09862336

申请日：2001-05-23

Applicant: Jae Suk Lee ,  Young Sun Cho ,  Chi Sung Ihn ,  Hye Kyung Lee

Inventor： Jae Suk Lee ,  Young Sun Cho ,  Chi Sung Ihn ,  Hye Kyung Lee

IPC: C08F21206

CPC classification number: C08F297/02 ,  C07D209/86 ,  C08F12/32 ,  C08F297/026

Abstract: Disclosed are functionalized styrene derivatives containing carbazole and their anionic polymerization. Styrene derivatives containing carbazole, and homopolymers or copolymers of the styrene derivatives can be synthesized by the anionic polymerization method. Thusly synthesized high molecular weight polymer containing carbazole has advantages of thermal stability, optical properties, and defined molecular weight and limited molecular weight distribution.

公开(公告)号：US06512076B2

公开(公告)日：2003-01-28

申请号：US09935836

申请日：2001-08-24

Applicant: Jae Suk Lee ,  Jang Joo Kim ,  Jae Pil Kim ,  Jae Wook Kang ,  Won Young Lee

Inventor： Jae Suk Lee ,  Jang Joo Kim ,  Jae Pil Kim ,  Jae Wook Kang ,  Won Young Lee

IPC: C08G7523

CPC classification number: G02B1/045 ,  C08G65/4006 ,  C08G75/02 ,  C08G75/23 ,  C08L81/06 ,  C08L71/00

Abstract: Disclosed are polyarylene ether sulfides and polyarylene ether sulfones for optical device and a method for preparing the same. Polyarylene ether sulfides containing fluorine and polyarylene ether sulfones containing fluorine are synthesized through polycondensation of pentafluorophenyl sulfide and pentafluorophenyl sulfone monomer with dihydroxy monomer. In addition, by attaching ethynyl phenol and phenylethynylphenol to terminals of the high molecular weight polymer, solvent resistance of the polymer is increased. Thus, the high molecular weight polymers prepared by very simplified process have low light loss, excellent resistance for heat, solvent and water, and so can be used to manufacture inactive optical waveguide devices.

公开(公告)号：US20160134730A1

公开(公告)日：2016-05-12

申请号：US14842938

申请日：2015-09-02

Applicant: Young-Ki LEE ,  Byeong-Taek MOON ,  Yo-Han JANG ,  Il-jong SONG ,  Jae-Suk LEE ,  Byeong-Hoon LEE

Inventor： Young-Ki LEE ,  Byeong-Taek MOON ,  Yo-Han JANG ,  Il-jong SONG ,  Jae-Suk LEE ,  Byeong-Hoon LEE

IPC: H04M1/02

CPC classification number: H04M1/026 ,  H01Q1/00 ,  H01Q1/243 ,  H01Q7/005 ,  H04M1/0249 ,  H04M1/72575 ,  H04M2201/08 ,  H04M2250/04 ,  H04W88/06

Abstract: A housing of a mobile device including a frame defining a perimeter of the mobile device, the frame including a first metal material and configured to operate as a first antenna for a first wireless communication, and a cover configured to cover one surface of the mobile device, the cover including a second metal material, and the cover and at least a portion of the frame configured to operate as a second antenna for a second wireless communication may be provided.

Abstract translation: 一种移动设备的壳体，包括限定移动设备的周边的框架，该框架包括第一金属材料并且被配置为作为用于第一无线通信的第一天线进行操作，以及被配置为覆盖移动设备的一个表面的盖 可以提供包括第二金属材料的盖，并且可以提供盖和被配置为用作第二无线通信的第二天线的帧的至少一部分。

公开(公告)号：US08487070B2

公开(公告)日：2013-07-16

申请号：US12246495

申请日：2008-10-06

Applicant: Jae-Suk Lee ,  Myung-Hwan Jeong ,  Kwan-Soo Lee ,  Eun-Seon Park ,  Young-Mu Joe

Inventor： Jae-Suk Lee ,  Myung-Hwan Jeong ,  Kwan-Soo Lee ,  Eun-Seon Park ,  Young-Mu Joe

IPC: C08G75/00

CPC classification number: H01B1/122 ,  C08G65/4006 ,  C08G65/4012 ,  C08G65/4056 ,  C08G65/48 ,  C08G75/23 ,  C08G2650/60 ,  C08L2205/05 ,  H01M8/1025 ,  H01M8/1027 ,  H01M8/1032 ,  H01M8/1034 ,  H01M8/1037 ,  H01M8/1039 ,  H01M8/1072 ,  H01M2300/0082 ,  Y02P70/56

Abstract: A sulfonated poly(arylene ether) copolymer that has a crosslinking structure in a chain of a polymer, a sulfonated poly(arylene ether) copolymer that has a crosslinking structure in and at an end of a chain of a polymer, and a polymer electrolyte film that is formed by using them are disclosed. According to the polycondensation reaction of the sulfonated dihydroxy monomer (HO—SAr1-OH), the none sulfonated dihydroxy monomer (HO—Ar—OH), the crosslinkable dihalide monomer (X—CM-X) and the none sulfonated dihalide monomer (X—Ar—X), the poly(arylene ether) copolymer in which the sulfonic acid is included is synthesized. The formed poly(arylene ether) copolymer has the crosslinkable structure in the chain of the polymer. In addition, by carrying out the polycondensation reaction in respects to the crosslinkable monohydroxy monomer or the crosslinkable monohalide monomer, the crosslinking can be formed at the end of the polymer. Through this, the thermal stability, the mechanical stability, the chemical stability, the film formation ability and the like is the same as or better than those of the Nafion film that is currently commercialized and is used as the polymer electrolyte film, and the proton conductivity and the cell performance are excessively improved. In addition, even though it is exposed to the moisture over a long period of time, since there is no change in the property of the electrolyte film, the dimensional stability is high.

Abstract translation: 在聚合物链中具有交联结构的磺化聚（亚芳基醚）共聚物，在聚合物链中具有交联结构并在其末端的磺化聚（亚芳基醚）共聚物和聚合物电解质膜 公开了使用它们形成的。 根据磺化二羟基单体（HO-SAr1-OH）的缩聚反应，无磺化二羟基单体（HO-Ar-OH），交联二卤化物单体（X-CM-X）和无磺化二卤化物单体 -Ar-X），其中包含磺酸的聚（亚芳基醚）共聚物被合成。 形成的聚（亚芳基醚）共聚物在聚合物链中具有可交联结构。 此外，通过对可交联单羟基单体或可交联单卤酸酯单体进行缩聚反应，可以在聚合物的末端形成交联。 由此，热稳定性，机械稳定性，化学稳定性，成膜能力等与目前商品化并用作聚合物电解质膜的Nafion膜相同或更好，质子 导电性和电池性能过度改善。 此外，即使长时间暴露于水分，由于电解质膜的性质没有变化，因此尺寸稳定性高。

公开(公告)号：US20090203861A1

公开(公告)日：2009-08-13

申请号：US12335693

申请日：2008-12-16

Applicant: Jae-Suk Lee ,  Nam-Goo Kang

Inventor： Jae-Suk Lee ,  Nam-Goo Kang

IPC: C08F4/48 ,  C08G73/00 ,  C08F4/46

CPC classification number: C08F4/48 ,  C08F297/00 ,  C08F212/14 ,  C08F220/10 ,  C08F12/32 ,  C08F12/26

Abstract: An anionic polymerization method for styrene derivative containing pyridine as functional group is provided. The method includes forming a complex of (vinylphenyl)-pyridine and lithium chloride and performing anionic polymerization. Accordingly, a polymer of styrene derivative containing pyridine can be obtained. The polymer has excellent optical properties, and its molecular weight and molecular weight distribution can be controlled.

Abstract translation: 提供了含吡啶作为官能团的苯乙烯衍生物的阴离子聚合方法。 该方法包括形成（乙烯基苯基） - 吡啶和氯化锂的络合物并进行阴离子聚合。 因此，可以得到含有吡啶的苯乙烯衍生物的聚合物。 聚合物具有优异的光学性能，并且可以控制其分子量和分子量分布。

公开(公告)号：US20090105416A1

公开(公告)日：2009-04-23

申请号：US12227140

申请日：2007-04-03

Applicant: Jae-Suk Lee ,  Nam-Goo Kang

Inventor： Jae-Suk Lee ,  Nam-Goo Kang

IPC: C07D213/06 ,  C08F26/06 ,  C08L39/04 ,  C08F4/50

CPC classification number: C07D213/16 ,  C08F26/06 ,  C08F112/32 ,  C08F212/08 ,  C08F293/005 ,  C08F212/32

Abstract: Provided are a vinyl-biphenylpyridine monomer and a polymer thereof. More particularly, the present invention provides a vinyl-biphenylpyridine monomer having a side chain of pyridine or phenylpyridine as a functional group, a homopolymer of which molecular weight and molecular weight distribution are controlled using the monomer, and a block copolymer of which molecular structure and molecular weight are controlled to facilitate synthesis of an organic metal complex. Accordingly, the present invention provides a vinyl-biphenylpyridine monomer and a polymer thereof which are effectively used as nano and optical functional materials.

Abstract translation: 提供了乙烯基 - 联苯基吡啶单体及其聚合物。 更具体地说，本发明提供了具有吡啶或苯基吡啶作为官能团的侧链的乙烯基联苯基吡啶单体，使用该单体控制分子量和分子量分布的均聚物，以及分子结构和 控制分子量以促进有机金属络合物的合成。 因此，本发明提供了有效地用作纳米和光学功能材料的乙烯基 - 联苯基吡啶单体及其聚合物。

公开(公告)号：US20080277791A1

公开(公告)日：2008-11-13

申请号：US12178577

申请日：2008-07-23

Applicant: Jae-Suk Lee

Inventor： Jae-Suk Lee

IPC: H01L23/48

CPC classification number: H01L23/53238 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact hole, a barrier metal layer including a first ruthenium layer, a ruthenium oxide layer and a second ruthenium layer, a seed copper layer formed on the barrier metal layer, and a copper line layer made of a Cu—Ag—Au solid solution. A disclosed example method of manufacturing a semiconductor device reduces and/or prevents contact characteristic degradation of the barrier metal layer with the silicon substrate or the damascene insulating layer. In addition, by forming the copper line layer made of the Cu—Ag—Au solid solution, long term device reliability may be improved.

Abstract translation: 公开了具有铜线层的半导体器件及其制造方法。 所示的半导体器件包括具有接触孔的镶嵌绝缘层，包含第一钌层，氧化钌层和第二钌层的阻挡金属层，形成在阻挡金属层上的种子铜层，以及铜线层 由Cu-Ag-Au固溶体制成。 公开的制造半导体器件的示例性方法减少和/或防止阻挡金属层与硅衬底或镶嵌绝缘层的接触特性劣化。 此外，通过形成由Cu-Ag-Au固溶体制成的铜线层，可以提高长期的器件可靠性。