Abstract:
Methods and apparatus for gas delivery to a process chamber are provided herein. In some embodiments, an apparatus for processing substrates may include a mass flow controller to provide a desired total fluid flow; a first flow control manifold comprising a first inlet, a first outlet, and a first plurality of orifices selectably coupled therebetween, wherein the first inlet is coupled to the mass flow controller; and a second flow control manifold comprising a second inlet, a second outlet, and a second plurality of orifices selectably coupled therebetween, wherein the second inlet is coupled to the mass flow controller; wherein a desired flow ratio between the first outlet and the second outlet is selectably obtainable when causing the fluid to flow through one or more of the first plurality of orifices of the first manifold and one or more of the second plurality of orifices of the second manifold.
Abstract:
A fluid treatment device includes an AC power source connected to first, second and third conductors. A electromagnetic field generating device is positioned adjacent to a fluid conduit, electrically connected to the first and third conductors to form a first circuit. A second electromagnetic field generating device is positioned adjacent to a second fluid conduit, electrically connected to the second and third electrical conductors to form a second circuit. A circuit element in the first circuit initiates a high frequency electromagnetic field at said first electromagnetic field generating device during a first half of the AC wave form in the first circuit, and a circuit element in the second circuit initiates a high frequency electromagnetic field at said first electromagnetic field generating device during a second half of the AC wave form in the second circuit.
Abstract:
The present invention relates to a method of diffusion bonding sheets of patterned material to fabricate a fluid delivery system; and particularly relates to a method of improving the interior surface roughness of fluid flow conduits formed within the diffusion bonded fluid delivery system structure.
Abstract:
The present invention relates to stainless steel sheets which would be useful in semiconductor processing and in other applications which require high purity fluid handling. The invention also relates to a method of selecting and processing such sheets.
Abstract:
Overlapping lenses for use in a light fixture provided to project a beam of light in a first beam shape having a first cross-sectional geometry. A first lens device is supported in the fixture and movable into a position to interrupt the beam of light for selecting beam shape by altering the first projected beam shape from the first cross-sectional geometry to a second cross-sectional geometry different from the first geometry. The first lens device includes at least one lenticular lens element having lenticules oriented in a first direction. A second lens device, separate from the first device, is supported in the fixture and movable into a position to interrupt the beam of light for selecting beam shape by altering the second projected beam shape from the second cross-sectional geometry to a third cross-sectional geometry different from the first and second geometries. The second lens device includes another lenticular lens element overlapping the one lenticular lens element of the first lens device and has lenticules oriented in a second direction, different from the first direction. The lens elements may be carried by discs rotatably mounted in the fixture. Each disc may carry a plurality of lens elements which can be combined by overlapping to change beam angle and beam shape.
Abstract:
The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.
Abstract:
Methods and apparatus for delivery of gas are provided herein. In some embodiments, a gas delivery system may include a premix tank having an inlet and an outlet; a plurality of gas supplies coupled to the inlet of the premix tank; a plurality of valves, each valve respectively disposed in line with a corresponding one of the plurality of gas supplies; and a conduit coupling the outlet of the premix tank to one or more gas delivery zones.
Abstract:
Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.
Abstract:
A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data, the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC.
Abstract:
A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.