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    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    23.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20090014833A1

    公开(公告)日：2009-01-15

    申请号：US12171066

    申请日：2008-07-10

    Applicant: Kuk-Han YOON ,  Jong-Kyu KIM ,  Sang-Sup JEONG ,  Sung-Gil CHOI ,  Tae-Hyuk AHN

    Inventor： Kuk-Han YOON ,  Jong-Kyu KIM ,  Sang-Sup JEONG ,  Sung-Gil CHOI ,  Tae-Hyuk AHN

    IPC: H01L27/08

    CPC classification number: H01L28/90 ,  H01L27/10852

    Abstract: An exemplary semiconductor device includes a semiconductor substrate on which lower electrodes are formed. The lower electrodes are arranged in an array including a rows extending substantially parallel to one another along a first direction. A stripe-shaped capacitor support pad is interposed between a pair of adjacent ones of the rows and is connected to lower electrodes in the pair of adjacent ones of the rows. The semiconductor device may include plurality of capacitors each including a one of the lower electrodes, a dielectric film, and an upper electrode. An upper end of the capacitor support pad is below the upper ends of the lower electrodes. A portion of the stripe-shaped capacitor support pad is interposed between adjacent ones of lower electrodes included within at least one of the rows and is connected to the adjacent ones of lower electrodes included within the at least one of the rows.

    Abstract translation: 示例性的半导体器件包括其上形成有下电极的半导体衬底。 下电极被布置成包括沿着第一方向彼此基本平行延伸的行的阵列。 条形电容器支撑垫插入在一对相邻行之间，并且连接到该对相邻行中的下电极。 半导体器件可以包括多个电容器，每个电容器包括下电极中的一个，电介质膜和上电极。 电容器支撑垫的上端位于下部电极的上端的下方。 条形电容器支撑垫的一部分介于包括在至少一行内的相邻的下电极之间，并且连接到包括在至少一行内的相邻的下电极。

    Ac Light Emitting Device Having Photonic Crystal Structure and Method of Fabricating the Same
    25.
    发明申请
    Ac Light Emitting Device Having Photonic Crystal Structure and Method of Fabricating the Same 有权
    具有光子晶体结构的交流发光装置及其制造方法

    公开(公告)号：US20080237613A1

    公开(公告)日：2008-10-02

    申请号：US12065063

    申请日：2006-09-06

    Applicant: Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    Inventor： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

    IPC: H01L33/00

    CPC classification number: H01L25/0753 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

    Abstract: Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

    Abstract translation: 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外，在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。 此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

    Light emitting diodes and display apparatuses using the same
    26.
    发明申请
    Light emitting diodes and display apparatuses using the same 有权
    发光二极管及使用其的显示装置

    公开(公告)号：US20080204626A1

    公开(公告)日：2008-08-28

    申请号：US11711877

    申请日：2007-02-28

    Applicant: Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    Inventor： Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    IPC: G02F1/1335 ,  H01L33/00

    CPC classification number: H01L33/46 ,  G02F1/133603 ,  G02F1/13362 ,  H01L33/405

    Abstract: In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

    Abstract translation: 在发光二极管中，第一半导体层供应电子，第二半导体层提供空穴。 在第一和第二半导体层之间形成有源层。 有源层接收电子和空穴，并且响应于电子和孔之间的耦合而发光。 第一反射层形成在第一半导体层的底部，第二反射层形成在第二半导体层的顶部。 从有源层发射的光朝向有源层的一侧离开。

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