Abstract:
A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 μm, and in others by less than or equal to about 1 μm), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V μm−1 and/or a potential difference of about 330 V or more.
Abstract:
An on-load tap changer (OLTC) for a transformer winding is disclosed. The OLTC includes a first MEMS switch coupled in series with a first tap on the transformer winding and a neutral terminal. The OLTC also includes a second MEMS switch coupled in series with a second tap on the transformer winding and the neutral terminal. The OLTC further includes a controller coupled to the first MEMS switch and the second MEMS switch, the controller configured to coordinate the switching operations of the first MEMS switch module and the second MEMS switch module to obtain a first predetermined turns ratio or a second predetermined turns ratio for the transformer winding.
Abstract:
A system that includes micro-electromechanical system switching circuitry, such as may be made up of a plurality of micro-electromechanical switches, is provided. The plurality of micro-electromechanical switches may generally operate in a closed switching condition during system operation. A controller is coupled to the electromechanical switching circuitry. The controller may be configured to actuate at least one of the micro-electromechanical switches to a temporary open switching condition while a remainder of micro-electromechanical switches remains in the closed switching condition to conduct a load current and avoid interrupting system operation. The temporary open switching condition of the switch is useful to avoid a tendency of switch contacts to stick to one another.
Abstract:
A MEMS switch is provided including a substrate, a movable actuator coupled to the substrate and having a first side and a second side, a first fixed electrode coupled to the substrate and positioned on the first side of the movable actuator to generate a first actuation force to pull the movable actuator toward a conduction state, and a second fixed electrode coupled to the substrate and positioned on the second side of the movable actuator to generate a second actuation force to pull the movable actuator toward a non-conducting state.
Abstract:
A motor starter is disclosed. The motor starter includes control circuitry integrally arranged with at least one current path and a processor included in the control circuitry. The motor starter further includes at least one processor algorithm residing on the processor, the at least one processor algorithm containing instructions to monitor characteristics of current on the at least one current path and to provide data pertaining to a condition of the at least one current path. The motor starter further includes a micro electromechanical system (MEMS) switch disposed on the at least one current path, the MEMS switch responsive to the control circuitry to facilitate the control of an electrical current, passing through the at least one current path.
Abstract:
An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.
Abstract:
A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.
Abstract:
The present invention comprises a micro-electromechanical system (MEMS) micro-switch array based current limiting enabled circuit interrupting apparatus. The apparatus comprising an over-current protective component, wherein the over-current protective component comprises a switching circuit, wherein the switching circuit comprises a plurality of micro-electromechanical system switching devices. The apparatus also comprises a circuit breaker or switching component, wherein the circuit breaker or switching component is in operable communication with the over-current protective component.
Abstract:
Electrical distribution systems implementing micro-electromechanical system based switching devices. Exemplary embodiments include a method in an electrical distribution system, the method including determining if there is a fault condition in a branch of the electrical distribution system, the branch having a plurality of micro electromechanical system (MEMS) switches, re-closing a MEMS switch of the plurality of MEMS switches, which is furthest upstream in the branch and determining if the fault condition is still present. Exemplary embodiments include an electrical distribution system, including an input port for receiving a source of power, a main distribution bus electrically coupled to the input port, a service disconnect MEMS switch disposed between and coupled to the input port and the main distribution bus and a plurality of electrical distribution branches electrically coupled to the main distribution bus.
Abstract:
One embodiment of the invention comprises a MEMS structure further comprising: a MEMS device (240) having a first surface with one or more contact structures (244, 245 and 246) thereon connected to functional elements of the MEMS device (240), a dielectric layer (100) overlying the first surface defining openings therein through which the contact structures (244, 245 and 246) are exposed, a patterned metallization layer (254, 255 and 256) comprising conductive material extending from the contact structures (244, 245 and 246) through the openings in the dielectric layer (100) and onto a surface of the dielectric layer and a first heat sink (190) in thermal communication with the metallization layer (254, 255 and 256).