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    Material determining apparatus for steel product and material determining method for steel product
    21.
    发明授权
    Material determining apparatus for steel product and material determining method for steel product 有权
    钢铁产品材料测定装置及钢铁产品材料测定方法

    公开(公告)号：US08498445B2

    公开(公告)日：2013-07-30

    申请号：US13002531

    申请日：2009-07-06

    申请人： Takeo Nakata ,  Masami Ikeda ,  Kenji Fujiwara

    发明人： Takeo Nakata ,  Masami Ikeda ,  Kenji Fujiwara

    IPC分类号： G06K9/00 ,  G06K9/46 ,  G06K9/66

    CPC分类号： G01N19/06 ,  G01N21/70 ,  G01N33/20

    摘要： An object of the invention is to provide a material determining apparatus for a steel product and a material determining method for a steel product which can stably and precisely determine a carbon content of the steel product. The invention provides a material determining apparatus for a steel product, which is provided with an imaging device for continuously imaging a spark generated during rubbing the steel product at a plurality of times, a detecting part for detecting spark regions and bursting spark regions from each of the imaged pictures imaged by the imaging device, a calculating part for calculating a total of the spark regions and a total of the bursting spark regions by summing up the numbers of the spark regions and the bursting spark regions detected by the detecting part with regard to each of all the imaged pictures, so as to calculate a rate of the total of the bursting spark regions with respect to the total of the spark regions, and a determining part for determining a carbon content of the steel product based on the rate, and a material determining method for the steel product.

    摘要翻译： 本发明的目的是提供一种可以稳定且精确地确定钢产品的碳含量的钢产品的材料测定装置和钢产品的材料测定方法。 本发明提供了一种用于钢产品的材料测定装置，其具有用于连续成像多次摩擦钢产品时产生的火花的成像装置，用于从火焰区域中检测火花区域和爆发火花区域的检测部件 由成像装置成像的成像图像，计算部分，用于通过对由检测部分检测到的火花区域和爆裂火花区域的数量进行相加来计算火花区域的总和和爆裂火花区域的总和 计算所有成像图像中的每一个，以便计算爆炸火花区域的总和相对于火花区域的总和的速率，以及用于基于速率确定钢产品的碳含量的确定部分，以及 钢材的材料测定方法。

    Ultrasonic testing method and apparatus
    22.
    发明授权
    Ultrasonic testing method and apparatus 有权
    超声波检测方法及装置

    公开(公告)号：US08393218B2

    公开(公告)日：2013-03-12

    申请号：US13129859

    申请日：2009-11-18

    申请人： Masaki Yamano ,  Masami Ikeda ,  Kenji Fujiwara ,  Hiroshi Kubota

    发明人： Masaki Yamano ,  Masami Ikeda ,  Kenji Fujiwara ,  Hiroshi Kubota

    IPC分类号： G01N29/00

    CPC分类号： G01N29/043 ,  G01N29/262 ,  G01N2291/106 ,  G01N2291/2634

    摘要： An ultrasonic testing apparatus 100 comprises an ultrasonic probe 1 including n (n≧2) number of transducers arranged along a predetermined direction, disposed so as to face a test object P, and a transmission/reception control device 2 for selecting m (n>m≧1) number of transducers from among the n number of transducers, transmitting ultrasonic waves from the selected m number of transducers toward the test object, receiving the ultrasonic waves therefrom, and switched m number of transducers to b selected successively. If an angle that the arrangement direction of the transducers makes with the surface of the test object which ultrasonic waves enter is θ, and the effective beam width of each selected m number of transducers with respect to a target flaw is W1, the transmission/reception control device switches m number of transducers to be selected successively by a switching pitch length P satisfying the formula: P≦W1·cos θ.

    摘要翻译： 超声波检查装置100包括：超声波探头1，其包括沿着预定方向排列的n（n≥2）个换能器的超声波探头1，被配置为面向被测试对象P;以及发送/接收控制装置2，用于选择m（n> 从n个换能器中的换能器的数量，从所选择的m个换能器向测试对象发送超声波，从其接收超声波，并将m个换能器切换为b个连续选择的传感器。 如果换能器的排列方向与超声波进入的被测物体的表面的角度为θ，则每个选择的m个换能器相对于目标缺陷的有效波束宽度为W1，则传输/ 接收控制装置将满足以下公式的切换节距长度P连续选择要连续选择的M个换能器：P＆lt; ll; W1·cos＆amp;

    Method for purifying tetrafluoroethylene
    23.
    发明授权
    Method for purifying tetrafluoroethylene 有权
    四氟乙烯纯化方法

    公开(公告)号：US08247626B2

    公开(公告)日：2012-08-21

    申请号：US12908911

    申请日：2010-10-21

    申请人： Shigeru Aida ,  Manabu Sato ,  Takeya Sakamoto ,  Nobuo Matsushita ,  Yuuji Hayase ,  Tomohiro Gotou ,  Kenji Fujiwara

    发明人： Shigeru Aida ,  Manabu Sato ,  Takeya Sakamoto ,  Nobuo Matsushita ,  Yuuji Hayase ,  Tomohiro Gotou ,  Kenji Fujiwara

    IPC分类号： C07C21/00

    CPC分类号： C07C17/389 ,  B01D15/00 ,  B01J20/0229 ,  B01J20/0281 ,  B01J20/0288 ,  B01J20/0296 ,  B01J20/103 ,  B01J20/3204 ,  B01J20/3236 ,  C07C21/185

    摘要： To provide a method for purifying tetrafluoroethylene by removing, from tetrafluoroethylene containing a polymerization inhibitor, the polymerization inhibitor by adsorption.A method of bringing tetrafluoroethylene containing a polymerization inhibitor into contact with a silica gel containing a metal salt in an amount of from 250 to 100,000 mass ppm as calculated as metal atoms to remove the polymerization inhibitor by adsorption, and the metal salt is preferably a salt of a metal of Group 3 to 13 of the Periodic Table, more preferably a salt of a metal of Group 8 to 10 of the Periodic Table. For example, as the metal salt, a salt of at least one metal selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and platinum may be used.

    摘要翻译： 为了提供一种通过从包含聚合抑制剂的四氟乙烯中除去聚合抑制剂来提纯四氟乙烯的方法。 将含有聚合抑制剂的四氟乙烯与含有金属盐的硅胶接触的方法，所述硅胶含量为金属原子计为250〜100,000质量ppm，通过吸附除去阻聚剂，金属盐优选为盐 的元素周期表第3〜13族的金属，更优选为元素周期表第8〜10族金属的盐。 例如，作为金属盐，可以使用选自铁，钴，镍，钌，铑，钯，锇，铱和铂中的至少一种金属的盐。

    Rectifier with less conduction loss than a diode
    24.
    发明授权
    Rectifier with less conduction loss than a diode 有权
    整流器的导通损耗小于二极管

    公开(公告)号：US08232830B2

    公开(公告)日：2012-07-31

    申请号：US12519802

    申请日：2007-12-20

    申请人： Miyuki Takeshita ,  Akihiko Iwata ,  Ikuro Suga ,  Shigeki Harada ,  Kenichi Kawabata ,  Takashi Kumagai ,  Kenji Fujiwara

    发明人： Miyuki Takeshita ,  Akihiko Iwata ,  Ikuro Suga ,  Shigeki Harada ,  Kenichi Kawabata ,  Takashi Kumagai ,  Kenji Fujiwara

    IPC分类号： H03K5/08

    CPC分类号： H02M7/217 ,  H03K17/063 ,  H03K17/302 ,  H03K17/567 ,  H03K17/74 ,  H03K2017/307 ,  H03K2217/0081

    摘要： A highly efficient rectifier can readily replace a two-terminal diode. Its conduction losses are reduced from that of the two-terminal diode. Connected between the source and drain of a MOSFET including a parasitic diode are a micro-power converter section for boosting a conduction voltage Vds between the source and drain to a predetermined voltage, and a self-drive control section that operates based on a voltage output from the micro-power converter section. When the source and drain are conductive with each other, the micro-power converter section generates, from the conduction voltage Vds, a power source voltage for the self-drive control section, and the self-drive control section (4) continues drive control of the MOSFET.

    摘要翻译： 高效率的整流器可以方便地替代二端子二极管。 其传导损耗比两端二极管的传导损耗减小。 连接在包括寄生二极管的MOSFET的源极和漏极之间的是用于将源极和漏极之间的导通电压Vds升高到预定电压的微功率转换器部分，以及基于电压输出操作的自驱动控制部分 从微功率转换器部分。 当源极和漏极彼此导通时，微功率转换器部分从导通电压Vds产生用于自驱动控制部分的电源电压，并且自驱动控制部分（4）继续驱动控制 的MOSFET。

    OLEFIN PRODUCTION PROCESS
    27.
    发明申请
    OLEFIN PRODUCTION PROCESS 有权
    OLEFIN生产过程

    公开(公告)号：US20110230696A1

    公开(公告)日：2011-09-22

    申请号：US13131905

    申请日：2009-10-22

    申请人： Tsuneyuki Ohkubo ,  Kenji Fujiwara ,  Terunori Fujita

    发明人： Tsuneyuki Ohkubo ,  Kenji Fujiwara ,  Terunori Fujita

    IPC分类号： C07C1/20

    CPC分类号： C07C1/24 ,  B01J23/72 ,  B01J23/78 ,  B01J23/868 ,  B01J23/885 ,  B01J29/7615 ,  C07C2529/76 ,  Y02P20/52 ,  C07C11/06

    摘要： A novel olefin production process of the invention can be established as an industrial and practical process of producing an olefin with high selectivity by directly reacting a ketone and hydrogen in a single reaction step. In particular, a novel olefin production process is provided in which propylene is obtained with high selectivity by directly reacting acetone and hydrogen. An olefin production process of the invention includes reacting a ketone and hydrogen at a reaction temperature in the range of 50 to 300° C. in the presence of a Cu-containing hydrogenation catalyst and a solid acid substance.

    摘要翻译： 本发明的新型烯烃生产方法可以建立为在单一反应步骤中通过使酮和氢直接反应制备具有高选择性的烯烃的工业和实际工艺。 特别地，提供了一种新的烯烃生产方法，其中通过使丙酮和氢气直接反应，通过高选择性获得丙烯。 本发明的烯烃制备方法包括在含Cu氢化催化剂和固体酸物质的存在下，在50至300℃的反应温度下使酮和氢反应。

    RECTIFIER
    30.
    发明申请
    RECTIFIER 有权
    整流器

    公开(公告)号：US20100073082A1

    公开(公告)日：2010-03-25

    申请号：US12519802

    申请日：2007-12-20

    申请人： Miyuki Takeshita ,  Akihiko Iwata ,  Ikuro Suga ,  Shigeki Harada ,  Kenichi Kawabata ,  Takashi Kumagai ,  Kenji Fujiwara

    发明人： Miyuki Takeshita ,  Akihiko Iwata ,  Ikuro Suga ,  Shigeki Harada ,  Kenichi Kawabata ,  Takashi Kumagai ,  Kenji Fujiwara

    IPC分类号： H02M7/12

    CPC分类号： H02M7/217 ,  H03K17/063 ,  H03K17/302 ,  H03K17/567 ,  H03K17/74 ,  H03K2017/307 ,  H03K2217/0081

    摘要： Provided is a highly efficient rectifier which can readily replace a two-terminal diode and whose conduction loss is reduced from that of the two-terminal diode.Connected between the source and drain of a MOSFET (2) including a parasitic diode (2a) are: a micro-power converter section (3) for boosting a conduction voltage Vds between the source and drain to a predetermined voltage; and a self-drive control section (4) that operates based on a voltage outputted from the micro-power converter section (3). When the source and drain are conductive with each other, the micro-power converter section (3) generates, from the conduction voltage Vds, a power source voltage for the self-drive control section (4), and the self-drive control section (4) continues drive control of the MOSFET (2).

    摘要翻译： 提供了一种高效整流器，其可以容易地替代二端子二极管，并且其导通损耗从二端子二极管的导通损耗减小。 连接在包括寄生二极管（2a）的MOSFET（2）的源极和漏极之间的是：用于将源极和漏极之间的导通电压Vds升高到预定电压的微功率转换器部分（3） 以及基于从微功率转换器部（3）输出的电压进行动作的自驱动控制部（4）。 当源极和漏极彼此导通时，微功率转换器部分（3）从导通电压Vds产生用于自驱动控制部分（4）的电源电压，以及自驱动控制部分 （4）继续驱动MOSFET（2）的控制。