公开(公告)号：US20070151517A1

公开(公告)日：2007-07-05

申请号：US11564554

申请日：2006-11-29

Applicant: Choon Kum BAIK ,  Ki Hoon LEE ,  Hyung Sub CHOI ,  Kang Jin SEO

Inventor： Choon Kum BAIK ,  Ki Hoon LEE ,  Hyung Sub CHOI ,  Kang Jin SEO

IPC: C23C16/00

CPC classification number: C23C16/4586 ,  C23C14/50 ,  C23C16/46

Abstract: A heater for depositing a thin film to deposit a thin film on a seated wafer by heating is provided. The heater for depositing a thin film includes: a wafer supporting plate on which a wafer is seated and a plurality of injection holes are disposed at the edge of the wafer supporting plate and in which a heat generating member is included; a shaft disposed at the lower side of the wafer supporting plate which comprises an inert gas pathway through which inert gas is provided; and a flow channel forming cover bonded to the lower part of the wafer supporting plate, and comprising an inner space formed between the flow channel forming cover and the wafer supporting plate, wherein the injection holes and the inert gas pathway are connected via the inner space.

Abstract translation: 提供一种用于沉积薄膜以通过加热将薄膜沉积在就座晶片上的加热器。 用于沉积薄膜的加热器包括：晶片支撑板，晶片在其上就座，并且多个喷射孔设置在晶片支撑板的边缘处，并且其中包括发热元件; 设置在晶片支撑板的下侧的轴，其包括惰性气体通道，惰性气体通过该惰性气体通道提供; 以及流路形成盖，其结合到所述晶片支撑板的下部，并且包括形成在所述流路形成盖和所述晶片支撑板之间的内部空间，其中所述喷射孔和所述惰性气体通路经由所述内部空间 。

公开(公告)号：US20070048977A1

公开(公告)日：2007-03-01

申请号：US11507829

申请日：2006-08-22

Applicant: Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

Inventor： Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

IPC: C23C16/00 ,  H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC classification number: C23C16/45523 ,  C23C16/30

Abstract: There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

Abstract translation: 提供了一种沉积Ge-Sb-Te薄膜的方法，包括：Ge-Sb-Te薄膜形成步骤，用于进料和吹扫包括Ge，Sb和Te中任一种的第一前体;第二前体，包括 Ge，Sb和Te中的另一个，和包含Ge，Sb和Te中的另一个的第三前体进入并安装晶片的腔室，并在晶片上形成Ge-Sb-Te薄膜; 以及在供给第一至第三前体中的任何一个的同时进料反应气体的反应气体供给步骤。

公开(公告)号：US20140034138A1

公开(公告)日：2014-02-06

申请号：US14111865

申请日：2012-04-12

Applicant: Ki-Hoon Lee ,  Dong-Ho Ryu

Inventor： Ki-Hoon Lee ,  Dong-Ho Ryu

IPC: F17D1/04

CPC classification number: F17D1/04 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/76883 ,  Y10T137/0318 ,  Y10T137/6966

Abstract: The present invention relates to a semiconductor manufacturing device, which can be applied in a semiconductor metal interconnection process, and a manufacturing method thereof. The semiconductor manufacturing device includes a loadlock chamber, at least one process chamber, a transfer chamber, and an oxidation preventing gas supply unit. The process chamber processes an annealing process by receiving a substrate. The transfer chamber transfers the substrate between the loadlock chamber and the process chamber. The oxidation preventing gas supply unit supplies oxidation preventing gas into either the transfer chamber or the loadlock chamber.

Abstract translation: 本发明涉及可应用于半导体金属互连工艺中的半导体制造装置及其制造方法。 半导体制造装置包括负载锁定室，至少一个处理室，转移室和防氧化气体供应单元。 处理室通过接收衬底来处理退火过程。 传送室在负载锁定室和处理室之间传送衬底。 氧化防止气体供给单元将氧化防止气体供给到传送室或负荷锁定室中。

公开(公告)号：US08324958B2

公开(公告)日：2012-12-04

申请号：US12844454

申请日：2010-07-27

Applicant: Ki Hoon Lee

Inventor： Ki Hoon Lee

IPC: H03K19/003 ,  H01H37/76

CPC classification number: H03K19/00392

Abstract: In one embodiment, a redundancy circuit may include a comparison unit configured to record a first repair address through fuse cutting, compare a comparison address with the first repair address, and output a comparison result signal; a first fuse enable unit configured to output a first fuse enable signal for repairing the first repair address; a second fuse enable unit configured to output a second fuse enable signal for repairing a second repair address; a first determination unit configured to output a first repair determination signal in response to receipt of the first fuse enable signal and the comparison result signal; and a second determination unit configured to output a second repair determination signal in response to receipt of an inverted signal of a value of the comparison result signal corresponding to the certain bit, remaining bits, and the second fuse enable signal.

Abstract translation: 在一个实施例中，冗余电路可以包括比较单元，其被配置为通过熔丝切割记录第一修复地址，将比较地址与第一修复地址进行比较，并输出比较结果信号; 第一熔丝使能单元，被配置为输出用于修复所述第一修复地址的第一熔丝使能信号; 第二熔丝使能单元，被配置为输出用于修复第二修复地址的第二熔丝使能信号; 第一确定单元，被配置为响应于接收到所述第一熔丝使能信号和所述比较结果信号而输出第一修复确定信号; 以及第二确定单元，被配置为响应于与特定比特，剩余比特和第二保险丝使能信号相对应的比较结果信号的值的反相信号而输出第二修复确定信号。

公开(公告)号：US20090048328A1

公开(公告)日：2009-02-19

申请号：US11988561

申请日：2006-07-10

Applicant: Hwan Mook Kim ,  Sang-Bae Han ,  Chang-Woo Lee ,  Ki-Hoon Lee ,  Sung-Kyu Park ,  Ki-Ho Lee ,  Jong-Soon Kang ,  Won-Kee Yoon ,  Young-Kook Kim

Inventor： Hwan Mook Kim ,  Sang-Bae Han ,  Chang-Woo Lee ,  Ki-Hoon Lee ,  Sung-Kyu Park ,  Ki-Ho Lee ,  Jong-Soon Kang ,  Won-Kee Yoon ,  Young-Kook Kim

IPC: A61K31/4155 ,  A61P37/06

CPC classification number: C12P17/10

Abstract: This invention relates to a composition for the prevention and treatment of acute graft-versus-host disease comprising prodigiosin isolated from Serratia marcescence B-1231 KCTC 0386BP, as an effective ingredient. The prodigiosin is immunosup-pressive by selectively suppressing the proliferation of T-cells through the suppression of the expression of IL-2 receptors, which is needed for the activation of T-cells. Prodigiosin can be used either alone or in conjunction with cyclosporin A for greater effect, since the two substances have different mode of actions. These make prodigiosin effective for the prevention and treatment of acute graft-versus-host disease.

Abstract translation: 本发明涉及用于预防和治疗急性移植物抗宿主病的组合物，其包括从沙雷氏菌属B-1231 KCTC 0386BP分离的天竺葵素作为有效成分。 通过抑制T细胞活化所需的IL-2受体的表达，通过选择性抑制T细胞的增殖，产生免疫抑制作用。 由于两种物质具有不同的作用模式，因此可以单独使用或与环孢菌素A联合使用。 这些使癌细胞生成素有效预防和治疗急性移植物抗宿主病。

公开(公告)号：US06828190B2

公开(公告)日：2004-12-07

申请号：US09276803

申请日：1999-03-26

Applicant: Byoung-taek Lee ,  Ki-hoon Lee

Inventor： Byoung-taek Lee ,  Ki-hoon Lee

IPC: H01L218242

CPC classification number: H01L28/82

Abstract: A method of manufacturing a capacitor includes sequentially forming a storage electrode, a high dielectric layer, a plate electrode, and an interdielectric layer over a semiconductor substrate. A first post-annealing of the substrate is performed under an inert atmosphere at a first temperature, and then a second post-annealing is performed at a second temperature. The first and second post annealings can be performed after forming the high dielectric layer, the plate electrode, or the interdielectric layer, or any combination thereof, as long as the second post-annealing is performed after the first post-annealing. The post-annealings are not necessarily performed in a same place or stage. The first temperature may be about 600° C. to 900° C., and the second temperature about 100° C. to 600° C. As a result, the dielectric constant of the high dielectric layer is increased, and leakage current is reduced.

Abstract translation: 制造电容器的方法包括在半导体衬底上顺序形成存储电极，高电介质层，平板电极和电介质层。 在第一温度下在惰性气氛下进行基材的第一次后退火，然后在第二温度下进行第二次后退火。 第一和第二后退火可以在形成高介电层，平板电极或介电层之后进行，或者其任何组合，只要在第一次后退火之后进行第二次后退火即可。 后退火不一定在相同的地方或阶段进行。 第一温度可以为约600℃至900℃，第二温度为约100℃至600℃。结果，高介电层的介电常数增加，泄漏电流降低 。

公开(公告)号：US20170239259A1

公开(公告)日：2017-08-24

申请号：US14569201

申请日：2014-12-12

Applicant: Kyeong LEE ,  Mi Sun WON ,  Hwan Mook KIM ,  Song Kyu PARK ,  Kiho LEE ,  Ki Hoon LEE ,  Chang Woo LEE ,  Jung Joon LEE ,  Kyung Sook CHUNG ,  Bo Kyung KIM ,  Yinglan JIN ,  Seung-hee LEE

Inventor： Kyeong LEE ,  Mi Sun WON ,  Hwan Mook KIM ,  Song Kyu PARK ,  Kiho LEE ,  Ki Hoon LEE ,  Chang Woo LEE ,  Jung Joon LEE ,  Kyung Sook CHUNG ,  Bo Kyung KIM ,  Yinglan JIN ,  Seung-hee LEE

IPC: A61K31/5375 ,  A61K31/167 ,  A61K31/196 ,  A61K31/40 ,  A61K31/34 ,  A61K9/08 ,  A61K31/417 ,  A61K9/00 ,  A61K9/14 ,  A61K9/20 ,  A61K9/48 ,  A61K31/24 ,  A61K31/4409

CPC classification number: A61K31/5375 ,  A61K9/0019 ,  A61K9/08 ,  A61K9/14 ,  A61K9/20 ,  A61K9/48 ,  A61K31/167 ,  A61K31/196 ,  A61K31/24 ,  A61K31/34 ,  A61K31/40 ,  A61K31/417 ,  A61K31/4409 ,  C07C233/07 ,  C07C235/28 ,  C07C311/16 ,  C07C311/46 ,  C07C317/40 ,  C07C2603/74 ,  C07D295/088

Abstract: The present invention relates to a compound inhibiting HF-1 activity, a preparation method of the same, and a pharmaceutical composition comprising the same as an active ingredient. The compound of the present invention demonstrates anticancer activity not by non-selective cytotoxicity but by inhibiting the activity of HIF-1, the transcription factor playing an important role in cancer cell growth and metastasis.Accordingly, the compound or the pharmaceutically acceptable salt thereof according to the present invention inhibits HIF-1 activity, and therefore can be used as a therapeutic agent for solid tumors such as colon cancer, liver cancer, stomach cancer and breast cancer. In addition, the compound or the pharmaceutically acceptable salt thereof according to the present invention can be used as an active ingredient for a therapeutic agent for diabetic retinopathy or arthritis which may become worse when hypoxia-induced VEGF expression by HIF-1 increases.

公开(公告)号：US09055066B2

公开(公告)日：2015-06-09

申请号：US13332612

申请日：2011-12-21

Applicant: I-Gil Kim ,  Sun-Jong Kwon ,  Gyu-Tae Baek ,  Ki-Hoon Lee

Inventor： I-Gil Kim ,  Sun-Jong Kwon ,  Gyu-Tae Baek ,  Ki-Hoon Lee

IPC: A63F9/24 ,  H04L29/08 ,  H04L29/06

CPC classification number: H04L67/10 ,  H04L65/4084 ,  H04L67/38

Abstract: An apparatus and method for providing a game service in cloud computing environment. A method may be provided for providing a streaming game service using a plurality of cloud computing servers. The method may include receiving user inputs from at least one user equipments, executing and progressing at least one game program in response to the user inputs, capturing audio and video data as progress results of the executed at least one game program, and streaming the captured audio and video data to a respective user equipment.

Abstract translation: 一种用于在云计算环境中提供游戏服务的装置和方法。 可以提供一种用于使用多个云计算服务器提供流式游戏服务的方法。 该方法可以包括从至少一个用户设备接收用户输入，响应于用户输入执行和进行至少一个游戏程序，捕获音频和视频数据作为所执行的至少一个游戏程序的进度结果，并且将捕获的 音频和视频数据传送到相应的用户设备。

公开(公告)号：US08772077B2

公开(公告)日：2014-07-08

申请号：US12936563

申请日：2009-04-16

Applicant: Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

Inventor： Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

IPC: H01L21/00

CPC classification number: C23C16/305 ,  C23C16/042 ,  C23C16/45527

Abstract: The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern.

Abstract translation: 本发明涉及一种形成用于相变存储器的硫族化物薄膜的方法。 在根据本发明的形成硫族化物薄膜的方法中，将形成有图案的基板装载到反应器中，并将源气体供应到基板上。 这里，源气体包括选自锗（Ge）源气体，镓（Ga）源气体，铟（In）源气体，硒（Se）源气体，锑（Sb）源气体，碲（ Te）源气体，锡（Sn）源气体，银（Ag）源气体和硫（S）源气体。 为了清洗供给到基板上的源气体，将第一吹扫气体供给到基板上，然后将用于还原原料气体的反应气体供给到基板上，向基板供给第二吹扫气体以便吹扫 供给到基板上的反应气体。 执行至少一种操作，即改变第一吹扫气体的供应时间和/或调节反应器的内部压力，以确保图案内部的沉积速率大于沉积物的沉积速率 速率在图案的上部。 根据本发明，可以通过改变源气体的吹扫时间或调节反应器的内部压力来形成具有优异间隙填充性质的硫族化物薄膜，以确保成膜 在图案的内部的速率大于图案上部的成膜速率。

公开(公告)号：US08607222B2

公开(公告)日：2013-12-10

申请号：US13063549

申请日：2009-09-11

Applicant: Ki Hoon Lee

Inventor： Ki Hoon Lee

IPC: G06F9/445

CPC classification number: H04W8/245 ,  G06F8/65 ,  H04L67/34 ,  H04N21/43637 ,  H04N21/818 ,  H04W24/02

Abstract: The present invention relates to a communication method for upgrading software in a wireless network. The communication method according to one aspect of the present invention relates to a communication method for upgrading software on a specific device on a wireless network, and comprises a step wherein a first message that includes information indicating versions of one or more pieces of software being used by said device is transmitted to a controller of said wireless network and a step wherein said device receives from said controller a second message that includes indication information indicating whether it is necessary to perform a software upgrade.

Abstract translation: 本发明涉及一种用于升级无线网络中的软件的通信方法。 根据本发明的一个方面的通信方法涉及一种用于在无线网络上的特定设备上升级软件的通信方法，并且包括以下步骤：其中包括指示正在使用的一个或多个软件的版本的信息的第一消息 通过所述设备被发送到所述无线网络的控制器，并且其中所述设备从所述控制器接收包括指示是否需要执行软件升级的指示信息的第二消息的步骤。