公开(公告)号：US07871900B2

公开(公告)日：2011-01-18

申请号：US11873299

申请日：2007-10-16

Applicant: Konstantin Bourdelle ,  Nguyet-Phuong Nguyen ,  Walter Schwarzenbach

Inventor： Konstantin Bourdelle ,  Nguyet-Phuong Nguyen ,  Walter Schwarzenbach

IPC: H01L21/30

CPC classification number: H01L21/76254

Abstract: A method for forming a structure is provided and includes implanting an atomic species into a donor substrate having an upper surface at a given depth relative to the upper surface to form an embrittlement zone in the donor substrate, the embrittlement zone defining a removable layer within the donor substrate. The method further includes assembling the upper surface of the donor substrate to a receiver substrate. Additionally, the method includes detaching the removable layer from the donor substrate at the embrittlement zone, thereby forming a detachment surface on the removable layer, by high temperature annealing. The high temperature annealing includes a temperature upgrade phase to a predetermined maximum temperature, maintaining the maximum temperature for a predetermined exposure duration, and a temperature downgrade phase. The maximum temperature and the exposure duration are selected so as to prevent the appearance of significant defects at the detachment surface.

Abstract translation: 提供了一种用于形成结构的方法，包括将原子物质相对于上表面在给定深度处具有上表面的施主衬底中，以在施主衬底中形成脆化区，所述脆化区限定在所述施主衬底内的可移除层 供体底物。 该方法还包括将供体衬底的上表面组装到接收器衬底。 此外，该方法包括在脆化区域从施主衬底分离可移除层，从而通过高温退火在可除去层上形成分离表面。 高温退火包括温度升高阶段到预定的最高温度，将最高温度保持在预定的暴露持续时间和温度降级阶段。 选择最高温度和曝光时间以防止在分离表面处出现明显的缺陷。

公开(公告)号：US07670929B2

公开(公告)日：2010-03-02

申请号：US11624070

申请日：2007-01-17

Applicant: Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Giséle Rayssac, legal representative

Inventor： Konstantin Bourdelle ,  Carlos Mazure ,  Olivier Rayssac

IPC: H01L21/30

CPC classification number: H01L21/187

Abstract: The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.

Abstract translation: 本发明提供了直接接合基底的方法，其中至少一个包括在其前表面或其附近延伸的半导体材料层。 所提供的方法包括，在接合之前，使包含半导体材料的至少一个衬底的结合面在所选择的温度和选定的气体气氛中进行选择的热处理。 键合的衬底可用于电子，光学或光电子应用。

公开(公告)号：US07572331B2

公开(公告)日：2009-08-11

申请号：US11518366

申请日：2006-09-08

Applicant: Konstantin Bourdelle ,  Ian Cayrefourcq ,  Mark Kennard

Inventor： Konstantin Bourdelle ,  Ian Cayrefourcq ,  Mark Kennard

IPC: C30B25/18

CPC classification number: H01L21/0262 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532

Abstract: The present invention relates to a method of manufacturing a wafer comprising a single crystalline bulk substrate of a first material and at least one epitaxial layer of a second material which has a lattice different from the lattice of the first material. The present invention provides a method for manufacturing a wafer in which a layer which is lattice-mismatched with the substrate can be grown on the substrate with a high effectiveness and high quality at a low cost. A roughening step is included for roughening the surface of the bulk substrate and a growing step is included for growing the second material on the rough surface with a reduced number of threading dislocations and an enhanced strain relaxation compared to a second material that is epitaxially grown on a polished surface.

Abstract translation: 本发明涉及一种制造晶片的方法，该方法包括第一材料的单晶体体衬底和具有与第一材料的晶格不同的晶格的第二材料的至少一个外延层。 本发明提供了一种制造晶片的方法，其中可以以低成本以高效率和高质量在衬底上生长与衬底晶格失配的层。 包括粗糙化步骤以粗化本体衬底的表面，并且包括生长步骤，用于在粗糙表面上生长第二材料，数量较少的穿透位错和与外延生长的第二材料相比增强的应变松弛 抛光表面。

公开(公告)号：US20080237804A1

公开(公告)日：2008-10-02

申请号：US11873299

申请日：2007-10-16

Applicant: Konstantin BOURDELLE ,  Nguyet-Phuong Nguyen ,  Walter Schwarzenbach

Inventor： Konstantin BOURDELLE ,  Nguyet-Phuong Nguyen ,  Walter Schwarzenbach

IPC: H01L23/58 ,  H01L21/46

CPC classification number: H01L21/76254

Abstract: A method for forming a structure is provided and includes implanting an atomic species into a donor substrate having an upper surface at a given depth relative to the upper surface to form an embrittlement zone in the donor substrate, the embrittlement zone defining a removable layer within the donor substrate. The method further includes assembling the upper surface of the donor substrate to a receiver substrate. Additionally, the method includes detaching the removable layer from the donor substrate at the embrittlement zone, thereby forming a detachment surface on the removable layer, by high temperature annealing. The high temperature annealing includes a temperature upgrade phase to a predetermined maximum temperature, maintaining the maximum temperature for a predetermined exposure duration, and a temperature downgrade phase. The maximum temperature and the exposure duration are selected so as to prevent the appearance of significant defects at the detachment surface.

Abstract translation: 提供了一种用于形成结构的方法，包括将原子物质相对于上表面在给定深度处具有上表面的施主衬底中，以在施主衬底中形成脆化区，所述脆化区限定在所述施主衬底内的可移除层 供体底物。 该方法还包括将供体衬底的上表面组装到接收器衬底。 此外，该方法包括在脆化区域从施主衬底分离可移除层，从而通过高温退火在可除去层上形成分离表面。 高温退火包括温度升高阶段到预定的最高温度，将最高温度保持在预定的暴露持续时间和温度降级阶段。 选择最高温度和曝光时间以防止在分离表面处出现明显的缺陷。

公开(公告)号：US20080014714A1

公开(公告)日：2008-01-17

申请号：US11832431

申请日：2007-08-01

Applicant: Konstantin BOURDELLE ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

Inventor： Konstantin BOURDELLE ,  Carlos Mazure ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

IPC: H01L21/30

CPC classification number: H01L21/187

Abstract: A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.

Abstract translation: 一种制造混合基板的方法，所述方法通过施主和接收器基板的直接接合，其中每个基板具有相应的正面和表面，其中所述接收器基板的前表面具有靠近所述表面的半导体材料，所述施主基板包括： 定义要转移的层的弱点。 该方法包括通过在惰性气氛中将接收器基底的表面暴露于约900℃至约1200℃的温度至少30秒来制备基底表面; 将所制备的基板的正面直接接合在一起以形成复合基板; 对复合基板进行热处理以增加供体和接收器基板的前表面之间的结合强度; 以及通过在弱化区域分离供体基质的剩余部分而从施主衬底转移层。

公开(公告)号：US08309431B2

公开(公告)日：2012-11-13

申请号：US10577175

申请日：2004-10-28

Applicant: Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

Inventor： Nguyet-Phuong Nguyen ,  Ian Cayrefourcq ,  Christelle Lagahe-Blanchard ,  Konstantin Bourdelle ,  Aurélie Tauzin ,  Franck Fournel

IPC: H01L21/46

CPC classification number: H01L21/76254

Abstract: A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.

Abstract translation: 一种用于自支撑转移细层的方法，其中将至少一种离子注入相对于源 - 衬底表面的指定深度的源极 - 衬底中。 施加加强件以与源 - 基板紧密接触，并且源 - 基板在特定时间段内在特定温度下进行热处理，以便在基本上在指定深度处产生脆弱的掩埋区域而不产生薄层， 相对于源极 - 基板的其余部分，在表面和脆化的掩埋层之间限定为热分离。 将受控的局部能量脉冲施加到源 - 衬底，以引起薄层的自支撑分离。

公开(公告)号：US08309426B2

公开(公告)日：2012-11-13

申请号：US13093615

申请日：2011-04-25

Applicant: Konstantin Bourdelle ,  Carlos Mazure

Inventor： Konstantin Bourdelle ,  Carlos Mazure

IPC: H01L21/76

CPC classification number: H01L21/76283 ,  H01L21/76275 ,  H01L29/66181

Abstract: The present invention provides methods for the manufacture of a trench structure in a multilayer wafer that comprises a substrate, an oxide layer on the substrate and a semiconductor layer on the oxide layer. These methods include the steps of forming a trench through the semiconductor layer and the oxide layer and extending into the substrate, and of performing an anneal treatment of the formed trench such that at the inner surface of the trench some material of the semiconductor layer flows at least over a portion of the part of the oxide layer exposed at the inner surface of the trench. Substrates manufactured according to this invention are advantageous for fabricating various semiconductor devices, e.g., MOSFETs, trench capacitors, and the like.

Abstract translation: 本发明提供了在多层晶片中制造沟槽结构的方法，该多层晶片包括衬底，衬底上的氧化物层和氧化物层上的半导体层。 这些方法包括以下步骤：通过半导体层和氧化物层形成沟槽并延伸到衬底中，并且对所形成的沟槽进行退火处理，使得在沟槽的内表面处，半导体层的一些材料在 至少暴露在沟槽内表面的部分氧化物层的一部分。 根据本发明制造的衬底有利于制造各种半导体器件，例如MOSFET，沟槽电容器等。

公开(公告)号：US20110287571A1

公开(公告)日：2011-11-24

申请号：US13123661

申请日：2009-09-22

Applicant: Konstantin Bourdelle ,  Carlos Mazure

Inventor： Konstantin Bourdelle ,  Carlos Mazure

IPC: H01L31/0376

CPC classification number: H01L27/14689 ,  H01L27/1464

Abstract: A method of fabricating a back-illuminated image sensor that includes the steps of providing a first substrate of a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.

Abstract translation: 一种制造背照式图像传感器的方法，包括以下步骤：提供半导体层的第一衬底，特别是硅层，在半导体层上形成电子器件结构，然后仅仅掺杂半导体层。 通过这样做，可以实现改进的光电二极管的掺杂剂分布和电性能，使得最终产品，即图像传感器具有更好的质量。

公开(公告)号：US08058158B2

公开(公告)日：2011-11-15

申请号：US12726800

申请日：2010-03-18

Applicant: Konstantin Bourdelle ,  Bich-Yen Nguyen ,  Mariam Sadaka

Inventor： Konstantin Bourdelle ,  Bich-Yen Nguyen ,  Mariam Sadaka

IPC: H01L21/425 ,  H01L21/70

CPC classification number: H01L21/2007 ,  H01L21/187 ,  H01L21/26513 ,  H01L21/823412 ,  H01L21/823481 ,  H01L27/1207

Abstract: A method for manufacturing a hybrid semiconductor substrate comprises the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOI) region, that comprises an insulating layer over a base substrate and a SeOI layer over the insulating layer, and a bulk semiconductor region, wherein the SeOI region and the bulk semiconductor region share the same base substrate; (b) providing a mask layer over the SeOI region; and (c) forming a first impurity level by doping the SeOI region and the bulk semiconductor region simultaneously such that the first impurity level in the SeOI region is contained within the mask. Thereby, a higher number of process steps involved in the manufacturing process of hybrid semiconductor substrates may be avoided.

Abstract translation: 一种用于制造混合半导体衬底的方法包括以下步骤：（a）提供包括绝缘体上半导体（SeOI）区域的混合半导体衬底，其包括在基底衬底上的绝缘层和绝缘层上的SeOI层， 以及体半导体区域，其中所述SeOI区域和所述体半导体区域共享相同的基底基板; （b）在SeOI区域上提供掩模层; 和（c）通过同时掺杂SeOI区域和体半导体区域使得SeOI区域中的第一杂质水平包含在掩模内而形成第一杂质水平。 因此，可以避免在混合半导体衬底的制造过程中涉及的更多数量的工艺步骤。

公开(公告)号：US20110241157A1

公开(公告)日：2011-10-06

申请号：US12793515

申请日：2010-06-03

Applicant: Carlos Mazure ,  Richard Ferrant ,  Konstantin Bourdelle ,  Bich-Yen Nguyen

Inventor： Carlos Mazure ,  Richard Ferrant ,  Konstantin Bourdelle ,  Bich-Yen Nguyen

IPC: H01L21/762 ,  H01L29/02

CPC classification number: H01L21/76254 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/76251

Abstract: The invention relates to a method for manufacturing a semiconductor substrate, in particular a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor and the handle substrate to obtain a donor-handle compound.

Abstract translation: 本发明涉及一种制造半导体衬底，特别是绝缘体上半导体衬底的方法，该衬底通过提供施主衬底和处理衬底，形成典型地在手柄衬底内的一个或多个掺杂区域的图案， 通过分子键合供体和手柄底物以获得供体 - 处理化合物。