公开(公告)号：US07328716B2

公开(公告)日：2008-02-12

申请号：US11062509

申请日：2005-02-22

Applicant: W. Karl Olander ,  Matthew B Donatucci ,  Luping Wang ,  Michael J. Wodjenski

Inventor： W. Karl Olander ,  Matthew B Donatucci ,  Luping Wang ,  Michael J. Wodjenski

IPC: F16K3/36 ,  B08B9/027 ,  G05B11/01

CPC classification number: F17C13/04 ,  F17C5/00 ,  F17C2201/0109 ,  F17C2201/0119 ,  F17C2201/032 ,  F17C2201/056 ,  F17C2201/058 ,  F17C2205/0111 ,  F17C2205/0176 ,  F17C2205/0326 ,  F17C2205/0332 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0391 ,  F17C2205/0394 ,  F17C2221/012 ,  F17C2221/014 ,  F17C2221/016 ,  F17C2221/037 ,  F17C2221/05 ,  F17C2223/0123 ,  F17C2223/036 ,  F17C2225/0123 ,  F17C2225/033 ,  F17C2225/035 ,  F17C2225/038 ,  F17C2227/044 ,  F17C2227/045 ,  F17C2250/032 ,  F17C2250/043 ,  F17C2260/036 ,  F17C2260/044 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/0324 ,  Y10T137/0419 ,  Y10T137/2569 ,  Y10T137/4259 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/7762 ,  Y10T137/7793 ,  Y10T137/8158 ,  Y10T137/87249

Abstract: Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.

Abstract translation: 使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。 气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。 压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器 阀，并进入气体歧管。 该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

公开(公告)号：US20050039425A1

公开(公告)日：2005-02-24

申请号：US10672051

申请日：2003-09-26

Applicant: W. Olander ,  Joseph Sweeney ,  Luping Wang

Inventor： W. Olander ,  Joseph Sweeney ,  Luping Wang

IPC: B01D53/74 ,  C23C14/48 ,  C23C14/56 ,  B01D50/00

CPC classification number: C23C14/48 ,  B01D53/74 ,  C23C14/564 ,  Y10S438/905 ,  Y10S438/909

Abstract: A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.

Abstract translation: 一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域 房间。 该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境 在设施中，例如，到设施的灰色房间。

公开(公告)号：US06740586B1

公开(公告)日：2004-05-25

申请号：US10288743

申请日：2002-11-06

Applicant: Luping Wang ,  Thomas H. Baum ,  Chongying Xu

Inventor： Luping Wang ,  Thomas H. Baum ,  Chongying Xu

IPC: H01L2131

CPC classification number: B01D3/346 ,  C23C16/4481 ,  H01L21/28556

Abstract: A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.

Abstract translation: 蒸发器输送系统，其包括施加到线基底上的可升华的固体前体材料，用于汽化并实现将蒸发的前体连续不间断地输送到下游半导体处理室。 涂覆的线基材以预定速度被拉过热源，以快速加热和蒸发可升华的固体前体。

公开(公告)号：US06620256B1

公开(公告)日：2003-09-16

申请号：US09708243

申请日：2000-11-08

Applicant: Jose Arno ,  Luping Wang ,  Glenn M. Tom

Inventor： Jose Arno ,  Luping Wang ,  Glenn M. Tom

IPC: C23G5028

CPC classification number: F17C1/00 ,  C23C16/4405 ,  F17C7/00 ,  F17C11/00 ,  F17C13/02 ,  F17C13/025 ,  F17C13/04 ,  F17C2201/0119 ,  F17C2201/056 ,  F17C2201/058 ,  F17C2203/0617 ,  F17C2205/0323 ,  F17C2205/0329 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0391 ,  F17C2221/01 ,  F17C2223/0153 ,  F17C2223/036 ,  F17C2225/0123 ,  F17C2225/033 ,  F17C2260/044 ,  F17C2265/017 ,  F17C2270/05

Abstract: An improved, non-plasma, static method for removing accumulated films and solid residues from interior surfaces of processing chambers used in thermal or plasma CVD treatment processes. The method includes introducing a reactive substance into a processing chamber while adjusting the pressure within the processing chamber to a predetermined level. The flow of the reactive substance into the processing chamber is terminated and the reactive substance is retained in the processing chamber to react with solid residues and form reaction products, following which the reaction products are subsequently removed from the processing chamber. Advantageously, terminating the flow of reactive substance into the processing chamber results in etching action that more effectively utilizes the cleaning agent and generates less hazardous materials.

Abstract translation: 一种用于从热处理室或等离子体CVD处理工艺中使用的处理室的内表面去除积聚的膜和固体残余物的改进的非等离子体静态方法。 该方法包括将反应物质引入处理室，同时将处理室内的压力调节至预定水平。 终止反应物质流入处理室，反应物质保留在处理室中，与固体残留物反应形成反应产物，随后将反应产物从处理室中除去。 有利地，终止反应物质流入处理室中导致蚀刻作用，其更有效地利用清洁剂并产生较少危险的材料。

公开(公告)号：US20070157804A1

公开(公告)日：2007-07-12

申请号：US11619935

申请日：2007-01-04

Applicant: James V. McManus ,  Luping Wang

Inventor： James V. McManus ,  Luping Wang

IPC: B01D53/02

CPC classification number: B01D53/0462 ,  B01D53/0476 ,  B01D53/261 ,  B01D2253/102 ,  B01D2253/108 ,  B01D2253/342 ,  B01D2257/204 ,  B01D2257/55 ,  B01D2257/80 ,  B01D2257/93 ,  B01D2258/0216 ,  B01D2259/40052 ,  B01D2259/40088 ,  B01D2259/4009 ,  B01D2259/404 ,  B01D2259/416 ,  B01D2259/4525 ,  F17C11/00

Abstract: A method and apparatus for decommissioning a fluid storage and dispensing system including a fluid storage and dispensing vessel containing adsorbent sorptively retaining residual fluid. The decommissioning involves removing the residual fluid, including superheating the adsorbent to temperature in a range of from (i) temperature substantially in excess of bulk desorption temperature of the fluid on the adsorbent, up to (ii) temperature substantially in excess of decomposition temperature of the fluid.

Abstract translation: 一种用于使流体储存和分配系统退役的方法和装置，包括含有吸附剂的流体储存和分配容器，吸附剂保留残留流体。 退役包括去除残留流体，包括将吸附剂过热至（i）基本上超过吸附剂上流体的体解吸温度的温度的温度，直到（ii）基本上超过分解温度的 流体。

公开(公告)号：US20070062167A1

公开(公告)日：2007-03-22

申请号：US11519681

申请日：2006-09-12

Applicant: W. Olander ,  Joseph Sweeney ,  Luping Wang

Inventor： W. Olander ,  Joseph Sweeney ,  Luping Wang

IPC: B01D50/00

CPC classification number: C23C14/48 ,  B01D53/74 ,  C23C14/564 ,  Y10S438/905 ,  Y10S438/909

Abstract: A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.

Abstract translation: 一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域 房间。 该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境 在设施中，例如，到设施的灰色房间。

公开(公告)号：US07105037B2

公开(公告)日：2006-09-12

申请号：US10672051

申请日：2003-09-26

Applicant: W. Karl Olander ,  Joseph D. Sweeney ,  Luping Wang

Inventor： W. Karl Olander ,  Joseph D. Sweeney ,  Luping Wang

IPC: F24F3/16

CPC classification number: C23C14/48 ,  B01D53/74 ,  C23C14/564 ,  Y10S438/905 ,  Y10S438/909

Abstract: A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.

公开(公告)号：US20060174944A1

公开(公告)日：2006-08-10

申请号：US11360732

申请日：2006-02-23

Applicant: W. Olander ,  Matthew Donatucci ,  Luping Wang ,  Michael Wodjenski

Inventor： W. Olander ,  Matthew Donatucci ,  Luping Wang ,  Michael Wodjenski

IPC: F16K3/36

CPC classification number: F17C13/04 ,  F17C5/00 ,  F17C2201/0109 ,  F17C2201/0119 ,  F17C2201/032 ,  F17C2201/056 ,  F17C2201/058 ,  F17C2205/0111 ,  F17C2205/0176 ,  F17C2205/0326 ,  F17C2205/0332 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0391 ,  F17C2205/0394 ,  F17C2221/012 ,  F17C2221/014 ,  F17C2221/016 ,  F17C2221/037 ,  F17C2221/05 ,  F17C2223/0123 ,  F17C2223/036 ,  F17C2225/0123 ,  F17C2225/033 ,  F17C2225/035 ,  F17C2225/038 ,  F17C2227/044 ,  F17C2227/045 ,  F17C2250/032 ,  F17C2250/043 ,  F17C2260/036 ,  F17C2260/044 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/0324 ,  Y10T137/0419 ,  Y10T137/2569 ,  Y10T137/4259 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/7762 ,  Y10T137/7793 ,  Y10T137/8158 ,  Y10T137/87249

Abstract: Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.

公开(公告)号：US07048785B2

公开(公告)日：2006-05-23

申请号：US10611534

申请日：2003-07-01

Applicant: Luping Wang ,  Doug Neugold

Inventor： Luping Wang ,  Doug Neugold

IPC: B01D53/04

CPC classification number: F17C11/007 ,  F17C11/00 ,  F17C2205/0338 ,  F17C2205/0391 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10S95/90 ,  Y10S502/526

Abstract: A fluid storage and delivery system utilizing a porous metal matrix that comprises at least one Group VIIIB metal therein. In one embodiment, the porous metal matrix forms a solid-phase metal adsorbent medium, with an average pore diameter of from about 0.5 nm to about 2 nm and a porosity of from about 10% to about 30%, which is particularly useful for sorptively storing and desorptively dispensing a low vapor pressure fluid, e.g., ClF3, HF, GeF4, Br2, etc. In another aspect, the porous metal matrix forms a solid-phase metal sorbent with an average pore diameter of from about 0.25 μm to about 500 μm and a porosity of from about 15% to about 95%, which can effectively immobilize low vapor pressure liquefied gas.

Abstract translation: 一种利用多孔金属基体的液体储存和输送系统，其中包含至少一种第VIIIB族金属。 在一个实施方案中，多孔金属基质形成固相金属吸附剂介质，其平均孔径为约0.5nm至约2nm，孔隙率为约10％至约30％，这对吸附特别有用 存储和解吸地分配低蒸气压流体，例如ClF 3，HF，GeF 4，Br 2 N等。另一方面， 多孔金属基体形成平均孔径为约0.25μm至约500μm的固相金属吸附剂，并且孔隙率为约15％至约95％，其可以有效地固定低蒸气压液化气体。

公开(公告)号：US06857447B2

公开(公告)日：2005-02-22

申请号：US10166242

申请日：2002-06-10

Applicant: W. Karl Olander ,  Matthew B. Donatucci ,  Luping Wang ,  Michael J. Wodjenski

Inventor： W. Karl Olander ,  Matthew B. Donatucci ,  Luping Wang ,  Michael J. Wodjenski

IPC: F17C7/00 ,  F17C5/00 ,  B08B9/027 ,  B08B5/00 ,  G05B11/01 ,  G06F15/00

CPC classification number: F17C13/04 ,  F17C5/00 ,  F17C2201/0109 ,  F17C2201/0119 ,  F17C2201/032 ,  F17C2201/056 ,  F17C2201/058 ,  F17C2205/0111 ,  F17C2205/0176 ,  F17C2205/0326 ,  F17C2205/0332 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0341 ,  F17C2205/0391 ,  F17C2205/0394 ,  F17C2221/012 ,  F17C2221/014 ,  F17C2221/016 ,  F17C2221/037 ,  F17C2221/05 ,  F17C2223/0123 ,  F17C2223/036 ,  F17C2225/0123 ,  F17C2225/033 ,  F17C2225/035 ,  F17C2225/038 ,  F17C2227/044 ,  F17C2227/045 ,  F17C2250/032 ,  F17C2250/043 ,  F17C2260/036 ,  F17C2260/044 ,  F17C2270/0518 ,  Y02E60/321 ,  Y10T137/0324 ,  Y10T137/0419 ,  Y10T137/2569 ,  Y10T137/4259 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/7762 ,  Y10T137/7793 ,  Y10T137/8158 ,  Y10T137/87249

Abstract: Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.

Abstract translation: 使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。 气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。 压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器 阀，并进入气体歧管。 该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。