公开(公告)号：US5262989A

公开(公告)日：1993-11-16

申请号：US760187

申请日：1991-09-16

Applicant: Young-Taek Lee ,  Jin-Man Han ,  Kyoung-Ho Kim ,  Hong-Seon Hwang

Inventor： Young-Taek Lee ,  Jin-Man Han ,  Kyoung-Ho Kim ,  Hong-Seon Hwang

IPC: G05F3/20 ,  G11C5/14 ,  G11C13/00

CPC classification number: G05F3/205 ,  G11C5/146

Abstract: A back-bias level sensor used for a semiconductor device wherein a sensing current for sensing a back-bias voltage is prevented from directly flowing into the substrate (or the back-bias voltage terminal). The gate of a PMOS transistor is provided with the back-bias voltage while the source is provided with a ground voltage, so that a pump circuit performs the pumping operation to increase the back-bias voltage when the back-bias voltage is lower than a predetermined voltage level; otherwise, the pump circuit is de-energized, thereby reducing the back-bias voltage.

Abstract translation: 用于半导体器件的背偏置电平传感器，其中防止用于感测反偏压的感测电流直接流入衬底（或背偏电压端）。 PMOS晶体管的栅极被提供有反向偏置电压，同时源极具有接地电压，使得泵电路进行泵浦操作以在背偏电压低于 预定电压电平; 否则，泵电路被断电，从而减小背偏电压。

公开(公告)号：US09166746B2

公开(公告)日：2015-10-20

申请号：US12730629

申请日：2010-03-24

Applicant: Byoung-Jae Bae ,  Soeng-Hun Kim ,  Sung-Man Han ,  Jun-Sung Lee ,  Gert-Jan Van Lieshout

Inventor： Byoung-Jae Bae ,  Soeng-Hun Kim ,  Sung-Man Han ,  Jun-Sung Lee ,  Gert-Jan Van Lieshout

IPC: H04L1/18

CPC classification number: H04L1/1835 ,  H04L1/1812 ,  H04L1/1816 ,  H04L1/1845

Abstract: An operating method and an apparatus according to data duplicate retransmission in a mobile communication system are provided. A method of a User Equipment (UE) according to data duplicate retransmission in a mobile communication system includes storing a Media Access Control Protocol Data Unit (MAC PDU) received from an Evolved Node B (ENB) in a soft buffer, decoding the MAC PDU, determining whether the decoding is a first successful decoding of data of the corresponding soft buffer, and determining whether to forward the decoded MAC PDU to an upper layer according to the determination result.

Abstract translation: 提供了一种在移动通信系统中根据数据重复重传的操作方法和装置。 根据移动通信系统中的数据重复发送的用户设备（UE）的方法包括将从演进节点B（ENB）接收的媒体接入控制协议数据单元（MAC PDU）存储在软缓冲器中，对MAC PDU进行解码 确定解码是否是对应的软缓冲器的数据的第一次成功解码，以及根据确定结果确定是否将解码的MAC PDU转发到上层。

公开(公告)号：US08789009B2

公开(公告)日：2014-07-22

申请号：US12788651

申请日：2010-05-27

Applicant: Joo Chul Lee ,  Tae Man Han

Inventor： Joo Chul Lee ,  Tae Man Han

IPC: G06F9/44

CPC classification number: G06F8/35 ,  G06F8/10

Abstract: Provided are an EMF model synchronization method and system. The system calculates a weight based on a hierarchy for an object identifier in a changed model, when the change of the model occurs in an EMF model which has an XML element path as an attribute. The system accumulates the calculated weight to a sum of weights. When the sum of weights becomes greater than the threshold value, the system simultaneously updates all models which are changed until the sum of weights becomes greater than the threshold value, thereby synchronizing change contents. As a hierarchy of an identifier changed on an XML path becomes higher, the weight is determined to have a larger value.

Abstract translation: 提供了EMF模型同步方法和系统。 当在具有XML元素路径作为属性的EMF模型中发生模型的改变时，系统基于改变模型中的对象标识符的层次来计算权重。 系统将计算出的权重累加为权重之和。 当权重之和变得大于阈值时，系统同时更新所有改变的模型，直到权重之和变得大于阈值，从而同步改变内容。 由于在XML路径上更改的标识符的层次结构变得更高，所以权重被确定为具有较大的值。

公开(公告)号：US08520436B2

公开(公告)日：2013-08-27

申请号：US13464531

申请日：2012-05-04

Applicant: Dzung H. Nguyen ,  Benjamin Louie ,  Hagop A. Nazarian ,  Aaron Yip ,  Jin-Man Han

Inventor： Dzung H. Nguyen ,  Benjamin Louie ,  Hagop A. Nazarian ,  Aaron Yip ,  Jin-Man Han

IPC: G11C16/04

CPC classification number: G11C16/10

Abstract: A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.

公开(公告)号：US08264886B2

公开(公告)日：2012-09-11

申请号：US12688600

申请日：2010-01-15

Applicant: Xiaojun Yu ,  Jin-man Han

Inventor： Xiaojun Yu ,  Jin-man Han

IPC: G11C16/06 ,  G11C16/32 ,  G11C16/26 ,  G11C16/08

CPC classification number: G11C11/5642 ,  G11C8/14 ,  G11C16/08 ,  G11C16/32

Abstract: Apparatus, systems, and methods may operate to receive an external read command at a control circuit coupled to a memory array. Individual wordline activation may be delayed according to a delay period determined by a read level voltage magnitude associated with a plurality of memory cells included in the array.

Abstract translation: 装置，系统和方法可以操作以在耦合到存储器阵列的控制电路处接收外部读取命令。 可以根据由包括在阵列中的多个存储器单元相关联的读取电平电压幅度确定的延迟周期来延迟单独的字线激活。

公开(公告)号：US08238164B2

公开(公告)日：2012-08-07

申请号：US12916755

申请日：2010-11-01

Applicant: Min Seok Kim ,  Jin Man Han ,  Ki Tae Park

Inventor： Min Seok Kim ,  Jin Man Han ,  Ki Tae Park

IPC: G11C11/34

CPC classification number: G11C16/12 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C2211/5621

Abstract: A method of programming a nonvolatile memory device comprises applying a gradually increasing program voltage to a memory cell, determining the number of verify voltages to be applied to the memory cell during a program loop based on the change of a threshold voltage from an initial state of the memory cell to a target state, and applying at least one of the determined verify voltages to the memory cell to verify whether the memory cell is programmed to the target state.

Abstract translation: 一种对非易失性存储器件进行编程的方法包括将逐渐增加的编程电压施加到存储器单元，基于来自初始状态的阈值电压的改变来确定在程序循环期间施加到存储单元的验证电压的数量 将所述存储器单元转换到目标状态，以及将所确定的验证电压中的至少一个施加到所述存储器单元，以验证所述存储器单元是否被编程到所述目标状态。

公开(公告)号：US08120952B2

公开(公告)日：2012-02-21

申请号：US12721693

申请日：2010-03-11

Applicant: Jin-Man Han

Inventor： Jin-Man Han

IPC: G11C16/04

CPC classification number: G11C11/5642 ,  G11C16/0483

Abstract: The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying sensing voltages to selected access lines for sensing selected memory cells. The method also includes applying a dynamic pass voltage to unselected access lines while the sensing voltages are applied.

Abstract translation: 本公开包括用于操作存储器单元的方法，设备，模块和系统。 一种方法实施例包括将感测电压施加到用于感测所选存储器单元的所选择的存取线。 该方法还包括在施加感测电压的同时向未选择的接入线施加动态通过电压。

公开(公告)号：US20110213918A1

公开(公告)日：2011-09-01

申请号：US13103669

申请日：2011-05-09

Applicant: Jin-Man Han

Inventor： Jin-Man Han

IPC: G06F12/02

CPC classification number: G11C16/10 ,  G11C8/08 ,  G11C16/3495 ,  G11C2216/14

Abstract: Methods and apparatus are disclosed, such as those involving a flash memory device. One such method includes storing data on memory cells on a memory block including a plurality of word lines and a plurality of memory cells on the word lines. The word lines comprising one or more bottom edge word lines, one or more top edge word lines, and intermediate word lines between the bottom and top edge word lines. The data is stored first on memory cells on the intermediate word lines. Then, a remaining portion, if any, of the data is stored on memory cells on the bottom edge word lines and/or the top edge word lines. This method enhances the life of the flash memory by preventing a premature failure of memory cells on the bottom or top edge word lines, which can be more prone to failure.

Abstract translation: 公开了诸如涉及闪存装置的方法和装置。 一种这样的方法包括将存储器单元上的数据存储在包括字线上的多个字线和多个存储器单元的存储器块上。 字线包括一个或多个底边字线，一个或多个顶边字线，以及底边和顶边字线之间的中间字线。 数据首先存储在中间字线上的存储单元上。 然后，数据的剩余部分（如果有的话）被存储在底部边缘字线和/或顶部边缘字线上的存储器单元上。 该方法通过防止底部或顶部边缘字线上的存储器单元的过早故障来增加闪存的寿命，这可能更容易发生故障。

公开(公告)号：US20110143016A1

公开(公告)日：2011-06-16

申请号：US12881253

申请日：2010-09-14

Applicant: Sung Jae Hong ,  Hong Won Lee ,  Seok Man Han ,  Joo Jin

Inventor： Sung Jae Hong ,  Hong Won Lee ,  Seok Man Han ,  Joo Jin

IPC: C23C16/52

CPC classification number: C23C16/46 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/52

Abstract: Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.

Abstract translation: 提供了一种方法，其中，不需要使用复杂的高价位设备就可以精确地掌握基座的表面温度与基板的表面温度之差。 一种用于化学气相沉积装置的温度控制方法包括：检测基板在其顶表面上积聚基板的旋转状态，测量基座顶表面的温度，计算上表面的温度分布 基于检测到的旋转状态和测量温度，并且基于计算的温度分布来控制基座的顶表面的温度。

公开(公告)号：US20110110154A1

公开(公告)日：2011-05-12

申请号：US12916755

申请日：2010-11-01

Applicant: Min Seok KIM ,  Jin Man HAN ,  Ki Tae PARK

Inventor： Min Seok KIM ,  Jin Man HAN ,  Ki Tae PARK

IPC: G11C16/34 ,  G11C16/12

CPC classification number: G11C16/12 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3454 ,  G11C2211/5621

Abstract: A method of programming a nonvolatile memory device comprises applying a gradually increasing program voltage to a memory cell, determining the number of verify voltages to be applied to the memory cell during a program loop based on the change of a threshold voltage from an initial state of the memory cell to a target state, and applying at least one of the determined verify voltages to the memory cell to verify whether the memory cell is programmed to the target state.

Abstract translation: 一种对非易失性存储器件进行编程的方法包括将逐渐增加的编程电压施加到存储器单元，基于来自初始状态的阈值电压的改变来确定在程序循环期间施加到存储单元的验证电压的数量 将所述存储器单元转换到目标状态，以及将所确定的验证电压中的至少一个施加到所述存储器单元，以验证所述存储器单元是否被编程到所述目标状态。