公开(公告)号：US20090277867A1

公开(公告)日：2009-11-12

申请号：US11602128

申请日：2006-11-20

Applicant: Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

Inventor： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC: B44C1/22 ,  B05D5/12

CPC classification number: C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

Abstract translation: 电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征 在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属 在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。 在介电层中选择性地施加电镀加速器和填充宽特征腔。

公开(公告)号：US6126382A

公开(公告)日：2000-10-03

申请号：US980125

申请日：1997-11-26

Applicant: Martin N. Scales ,  David A. Pechin ,  Jeffrey C. Benzing ,  R. Marshall Stowell

Inventor： Martin N. Scales ,  David A. Pechin ,  Jeffrey C. Benzing ,  R. Marshall Stowell

IPC: H01L21/68 ,  G01N21/30

CPC classification number: H01L21/68 ,  Y10S414/136

Abstract: A passive mechanism for centering a wafer on a chuck and with respect to a backside exclusion gas ring includes a plurality of wheels that are rotatably mounted in a circular pattern at the top surface of a chuck. The axis of rotation of each wheel is parallel to the top surface of the chuck and perpendicular to a radius extending outward from the centerpoint of the chuck surface. When a wafer is placed on the chuck, its edge contacts the wheels and, by its own weight, the wafer moves toward the center of the chuck, thereby centering itself. The wafer either slides on the wheels or, if the frictional force between the wafer and one or more of the wheels is great enough, the wafer causes the wheel to turn. The wheels may be mounted on the chuck, a carrier ring or a wafer transfer arm for moving wafers between processing stations. In one embodiment the alignment wheels are mounted on a carrier ring, and a second alignment mechanism aligns the carrier ring to the chuck.

Abstract translation: 用于将晶片对准卡盘并相对于背面排除气体环的被动机构包括在卡盘的顶表面处以圆形图案可旋转地安装的多个轮。 每个轮的旋转轴线平行于卡盘的顶表面，并垂直于从卡盘表面的中心点向外延伸的半径。 当将晶片放置在卡盘上时，其边缘接触轮子，并且通过其自身的重量，晶片朝向卡盘的中心移动，从而使其自身居中。 晶片在车轮上滑动，或者如果晶片和一个或多个车轮之间的摩擦力足够大，则晶片导致车轮转动。 轮可以安装在卡盘上，载体环或晶片传送臂，用于在处理站之间移动晶片。 在一个实施例中，对准轮安装在承载环上，并且第二对准机构将承载环对准卡盘。