公开(公告)号：US20090280649A1

公开(公告)日：2009-11-12

申请号：US11890790

申请日：2007-08-06

Applicant: Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

Inventor： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC: H01L21/44 ,  C25D17/00 ,  H01L21/306

CPC classification number: C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

公开(公告)号：US08158532B2

公开(公告)日：2012-04-17

申请号：US11602128

申请日：2006-11-20

Applicant: Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

Inventor： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC: H01L21/302

CPC classification number: C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

Abstract translation: 电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征 在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属 在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。 在介电层中选择性地施加电镀加速器和填充宽特征腔。

公开(公告)号：US20090277867A1

公开(公告)日：2009-11-12

申请号：US11602128

申请日：2006-11-20

Applicant: Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

Inventor： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC: B44C1/22 ,  B05D5/12

CPC classification number: C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

Abstract translation: 电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征 在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属 在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。 在介电层中选择性地施加电镀加速器和填充宽特征腔。

公开(公告)号：US07091134B1

公开(公告)日：2006-08-15

申请号：US10464279

申请日：2003-06-17

Applicant: Henner W. Meinhold ,  Wayne Cai ,  Mark L. Rea ,  Sachin M. Chinchwadkar

Inventor： Henner W. Meinhold ,  Wayne Cai ,  Mark L. Rea ,  Sachin M. Chinchwadkar

IPC: H01L21/31

CPC classification number: B41J2/04581 ,  B41J2/04506 ,  B41J2/04543 ,  B41J2/0456 ,  B41J2/04573 ,  H01L51/0005

Abstract: In one embodiment, an integrated circuit (IC) fabrication material is dispensed from a print head by dividing its nozzles into several groups, and sequentially allowing each group to fire. The nozzles may be grouped based on the amounts of material they dispense. For example, the nozzles may be grouped by drop volume or drop mass. In one embodiment, an IC fabrication material is dispensed on a substrate by controlling a firing sequence of a nozzle to promote merging of material on the substrate. The firing sequence may also be altered to take into account the firing sequence of adjacent nozzles.

Abstract translation: 在一个实施例中，集成电路（IC）制造材料通过将其喷嘴分成几组而从打印头分配，并且顺序地允许每个组起火。 喷嘴可以根据它们分配的材料的量进行分组。 例如，喷嘴可以通过液滴体积或液滴质量进行分组。 在一个实施例中，IC制造材料通过控制喷嘴的点火顺序来分配在基板上，以促进材料在基板上的合并。 也可以改变喷射序列以考虑相邻喷嘴的喷射顺序。

公开(公告)号：US08470191B2

公开(公告)日：2013-06-25

申请号：US11890790

申请日：2007-08-06

Applicant: Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

Inventor： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC: C23F1/02

CPC classification number: C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

公开(公告)号：US07449098B1

公开(公告)日：2008-11-11

申请号：US10739822

申请日：2003-12-17

Applicant: Steven T. Mayer ,  Jonathan D. Reid ,  Mark L. Rea ,  Ismail T. Emesh ,  Henner W. Meinhold ,  John S. Drewery

Inventor： Steven T. Mayer ,  Jonathan D. Reid ,  Mark L. Rea ,  Ismail T. Emesh ,  Henner W. Meinhold ,  John S. Drewery

IPC: C25D5/02 ,  C25D5/34 ,  C25D5/48 ,  C25D7/12

CPC classification number: B23H5/08 ,  C25D5/06 ,  C25D5/22 ,  C25D5/34 ,  C25D5/48 ,  C25D7/123 ,  C25F3/16 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877

Abstract: A disclosed form of mechanically assisted electroplating leads to a flat, thin, overburden. In one example, an accelerator is deposited on a copper surface and mechanically removed in a simplified CMP-like apparatus. The wafer is then plated in an electrolyte containing little or no accelerating additives.

Abstract translation: 一种公开的机械辅助电镀形式导致平坦，薄的覆盖层。 在一个实例中，加速器沉积在铜表面上并在简化的类似CMP的装置中机械地去除。 然后将晶片镀在含有很少或没有加速添加剂的电解质中。

公开(公告)号：US06764168B1

公开(公告)日：2004-07-20

申请号：US10087539

申请日：2002-03-01

Applicant: Henner W. Meinhold ,  Mark L. Rea ,  Sachin M. Chinchwadkar ,  Fred J. Chetcuti ,  John S. Drewery

Inventor： Henner W. Meinhold ,  Mark L. Rea ,  Sachin M. Chinchwadkar ,  Fred J. Chetcuti ,  John S. Drewery

IPC: B41J2125

CPC classification number: B41J2/125

Abstract: In one embodiment, a sensor includes two plates that form a capacitor. A droplet passing between the plates changes the capacitance of the sensor, thereby triggering an amplifier coupled to the sensor to generate an output signal. The output signal is indicative of droplet characteristics and may be used to calibrate a mechanism that dispensed the droplet.

Abstract translation: 在一个实施例中，传感器包括形成电容器的两个板。 通过板之间的液滴改变传感器的电容，从而触发耦合到传感器的放大器以产生输出信号。 输出信号表示液滴特性，可用于校准分配液滴的机构。