公开(公告)号：US5811929A

公开(公告)日：1998-09-22

申请号：US458137

申请日：1995-06-02

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J3/02 ,  H01J1/62 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode structure (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having one or more control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode (140) is positioned in a plane above or below the emitter edge or tip (110) and automatically aligned to that edge. The simplified devices are specially adapted for use in arrays, including field emission display arrays.

Abstract translation: 场致发射器件（10）由基本上平行于衬底（20）的侧向发射器（100）和简化的阳极结构（70）制成。 横向发射极场致发射器件具有薄膜发射极阴极（100），其厚度不超过几百埃，并且具有小的曲率半径的发射叶片边缘或尖端（110）。 当施加适当的偏置电压时，阳极的顶表面与侧向发射器的平面精确地间隔开并且在侧向发射极的平面之下并且接收从侧向发射极阴极的叶片边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极（140）的二极管或三极管，四极管等，以便通过施加到控制电极的电信号来控制从发射极到阳极的电流。 在特别简单的实施例中，单个控制电极（140）被定位在发射器边缘或尖端（110）的上方或下方的平面中，并自动对准该边缘。 简化的器件特别适用于阵列，包括场发射显示阵列。

公开(公告)号：US5703380A

公开(公告)日：1997-12-30

申请号：US490061

申请日：1995-06-13

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J9/02 ,  H01L29/06 ,  H01J1/46

CPC classification number: H01J9/025

Abstract: A lateral-emitter electron field emission device structure incorporates a thin film laminar composite emitter structure including two or more films composed of materials having different etch rates when etched by an etchant. In its simplest form, the laminar composite emitter consists of two ultra-thin layers, etched differentially so that a salient remaining portion of the more etch-resistant layer protrudes beyond the less etch-resistant layer to form a small-radius tip. In a preferred form of the laminar composite emitter, it is a multi-layer laminar emitter, of which the most etch-resistant layer is doped-diamond. The diamond layer is doped using one or more N-type dopants. In this preferred emitter structure, the edge of the thin film diamond layer is the dominant electron emitter with a very low (nearly zero) work function. Hence the new device can operate at applied voltages substantially lower than in prior art. The laminar structure may be a sandwich structure with three layers. Upper and/or lower supporting metallic layers act as both physical supporting material and as an integral electrical conducting medium. This allows the diamond layer to be very thin, on the order of tens of angstroms (i.e. less than 100 angstroms). The laminar composite emitter is specially adapted to fabrication by a method using semiconductor integrated circuit fabrication processes.

Abstract translation: 横向发射极电子场发射器件结构包括薄膜层状复合发射器结构，其包括由蚀刻剂蚀刻时具有不同蚀刻速率的材料构成的两个或更多个膜。 在其最简单的形式中，层状复合发射器由两个超薄层组成，其被差别地蚀刻，使得更耐蚀刻层的显着的剩余部分突出超过较少的耐蚀刻层以形成小半径的尖端。 在层状复合发射器的优选形式中，它是多层层流发射器，其最耐蚀刻层是掺杂金刚石的。 使用一种或多种N型掺杂剂掺杂金刚石层。 在这个优选的发射极结构中，薄膜金刚石层的边缘是主要的电子发射极，具有非常低（几乎为零）的功函数。 因此，新器件可以在大大低于现有技术的施加电压下工作。 层状结构可以是具有三层的夹层结构。 上和/或下支撑金属层充当物理支撑材料和作为整体导电介质。 这允许金刚石层非常薄，几十埃的数量级（即小于100埃）。 层状复合发射器特别适用于通过使用半导体集成电路制造工艺的方法制造。

公开(公告)号：US5700176A

公开(公告)日：1997-12-23

申请号：US735042

申请日：1996-10-22

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J9/39 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/40

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce lateral-emitter field-emission devices and their arrays. In a preferred fabrication process for the simplified anode device, the following steps are performed: an anode film (70) is deposited; an insulator film (90) is deposited over the anode film; an ultra-thin conductive emitter film (100) is deposited over the insulator and patterned; a trench opening (160) is etched through the emitter and insulator, stopping at the anode film, thus forming and automatically aligning an emitting edge of the emitter; and means are provided for applying an electrical bias to the emitter and anode, sufficient to cause field emission of electrons from the emitting edge of the emitter to the anode. The anode film may comprise a phosphor (75) for a device specially adapted for use in a field emission display. The fabrication process may also include steps to deposit additional insulator films (130) and to deposit additional conductive films for control electrodes (140), which are automatically aligned with the emitter blade edge or tip (110). A fabrication process for forming an evacuated or gas-filled sealed chamber in a substrate is disclosed.

Abstract translation: 使用与半导体集成电路制造类似的工艺步骤（S1-S18）来公开制造横向射极场致发射器件及其阵列的制造工艺。 在简化阳极器件的优选制造工艺中，执行以下步骤：沉积阳极膜（70）; 绝缘膜（90）沉积在阳极膜上; 在绝缘体上沉积超薄导电发射极膜（100）并图案化; 通过发射极和绝缘体蚀刻沟槽开口（160），停止在阳极膜处，从而形成并自动对准发射极的发射边缘; 并且提供用于将电偏压施加到发射极和阳极的装置，足以引起电子从发射极的发射边到阳极的场发射。 阳极膜可以包括用于特别适用于场致发射显示器的器件的荧光体（75）。 制造工艺还可以包括沉积额外的绝缘膜（130）并且沉积用于控制电极（140）的附加导电膜的步骤，所述导电膜自动地与发射器叶片边缘或尖端（110）对齐。 公开了一种用于在衬底中形成抽真空或充气密封腔的制造工艺。

公开(公告)号：US5669802A

公开(公告)日：1997-09-23

申请号：US549929

申请日：1995-10-30

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J61/00 ,  H05B33/12 ,  H01J1/30 ,  H01J9/02

CPC classification number: H01J61/00 ,  H05B33/12

Abstract: A microelectronic light-emitting device (10) is made with dual lateral thin-film emitters (35 and 40) substantially parallel to a substrate (20). A region containing phosphor (50) extends between the two emitters and contacts them. A fabrication process is specially adapted to produce the light-emitting devices and/or arrays of light-emitting devices. The process allows the use of conductive or insulating base or starting substrates. In a preferred process, these steps are performed: an insulating substrate is provided; an ultra-thin conductive emitter film is deposited over the insulating substrate and patterned; an insulating layer is deposited over the emitter film; conductive contacts are made through the insulating layer to the emitter film; a trench opening is etched through the insulating layer and emitter film, thus forming and automatically aligning two emitting edges of two emitters; a phosphor is deposited into the trench opening and optionally planarized; and means are provided for applying an electrical bias to the two emitter contacts, sufficient to cause injection of carriers from the emitting edges of the emitters into the phosphor.

Abstract translation: 微电子发光器件（10）由基本上平行于衬底（20）的双重横向薄膜发射器（35和40）制成。 含有荧光体（50）的区域在两个发射体之间延伸并与它们接触。 制造工艺特别适于产生发光器件和/或发光器件阵列。 该方法允许使用导电或绝缘基底或起始基底。 在优选的方法中，执行这些步骤：提供绝缘基板; 在绝缘基板上沉积超薄导电发射极膜并图案化; 绝缘层沉积在发射极膜上; 导电接触通过绝缘层制成发射极膜; 通过绝缘层和发射极膜蚀刻沟槽开口，从而形成并自动对准两个发射器的两个发射边缘; 磷光体沉积到沟槽开口中并任选地平坦化; 并且提供用于将电偏压施加到两个发射极触点的装置，足以使载流子从发射体的发射边缘注入到荧光体中。

公开(公告)号：US5629580A

公开(公告)日：1997-05-13

申请号：US331307

申请日：1994-10-28

Applicant: Jack A. Mandelman ,  Michael D. Potter

Inventor： Jack A. Mandelman ,  Michael D. Potter

IPC: H01J3/02 ,  H01J1/16

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: Lateral field emission devices ("FEDs") for display elements and methods of fabrication are set forth. The FED includes a thin-film emitter oriented parallel to, and disposed above, a substrate. The FED further includes a columnar shaped anode having a first lateral surface. A phosphor layer is disposed adjacent to the first lateral surface. Specifically, the anode is oriented such that the lateral surface and adjacent phosphor layer are perpendicular to the substrate. The emitter has a tip which is spaced less than the mean free distance of an electron in air from the phosphor layer. Operationally, when a voltage potential is applied between said anode and said emitter, electrons are emitted from the tip of the emitter into the phosphor layer causing the phosphor layer to emit electromagnetic energy. Further specific details of the field emission device, fabrication method, method of operation, and associated display are set forth.

Abstract translation: 阐述了用于显示元件和制造方法的侧面场致发射器件（“FED”）。 FED包括平行于并设置在基板上方的薄膜发射极。 FED还包括具有第一侧表面的柱状阳极。 磷光体层邻近第一侧面设置。 具体地，阳极被定向成使得侧表面和相邻磷光体层垂直于衬底。 发射器具有一个尖端，该尖端的距离小于空气中的电子与荧光体层的平均自由距离。 在工作上，当在所述阳极和所述发射极之间施加电压电位时，电子从发射极的尖端发射到荧光体层中，从而使荧光层发射电磁能。 阐述了场致发射装置，制造方法，操作方法和相关显示器的进一步具体细节。

公开(公告)号：US5628663A

公开(公告)日：1997-05-13

申请号：US524171

申请日：1995-09-06

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J3/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: An improved high-frequency field-emission microelectronic device (10) has a substrate (20) and an ultra-thin emitter electrode (30) extending parallel to the substrate and having an electron-emitting lateral edge (110) facing an anode (40) across an emitter-to-anode gap (120). A control electrode (70), having a lateral dimension only a minor fraction of the emitter-to-anode gap width, is disposed parallel to the emitter and spaced apart from the emitter by an insulator (60) of predetermined thickness. A vertical dimension of the control electrode is only a minor fraction of the height of the anode. The control electrode may substantially surround a portion of the anode, spaced from the anode in concentric relationship. Inter-electrode capacitance between the emitter and the control electrode has only an extremely small value, consisting of only a very small area term and a very small fringing-field term, thus allowing operation of the microelectronic device at higher frequencies or switching speeds than heretofore. Inter-electrode capacitance between the control electrode and the anode also has only an extremely small value, thus improving higher frequency performance further. Devices having a plurality of control electrodes may also be made with improved inter-electrode capacitance. In order to consistently realize improved performance, a fabrication process (S1-S18) is specially adapted for manufacturing the device with small and precise dimensions and suitably precise alignment. The specially adapted process uses two sacrificial materials (150 and 160), one of which forms a temporary mandrel, and uses a conformal conductive layer to form each control electrode while automatically achieving the required alignment precision.

Abstract translation: 改进的高频场致发射微电子器件（10）具有基板（20）和平行于基板延伸并且具有面向阳极（40）的电子发射侧向边缘（110）的超薄发射极电极（30） ）跨越发射极到阳极间隙（120）。 具有横向尺寸仅为发射极 - 阳极间隙宽度的一小部分的控制电极（70）平行于发射器设置，并且通过预定厚度的绝缘体（60）与发射器间隔开。 控制电极的垂直尺寸只是阳极高度的一小部分。 控制电极可以基本上围绕阳极的一部分，与阳极以同心的方式间隔开。 发射极和控制电极之间的电极间电容仅具有非常小的值，仅由非常小的面积项和非常小的边缘场项构成，从而允许微电子器件在比以前更高的频率或开关速度下运行 。 控制电极和阳极之间的电极间电容也只有非常小的值，从而进一步提高了更高的频率性能。 具有多个控制电极的器件也可以具有改善的电极间电容。 为了始终如一地实现改进的性能，制造工艺（S1-S18）特别适用于制造具有小而精确尺寸和适当精确对准的装置。 特别适用的工艺使用两种牺牲材料（150和160），其中一种形成临时芯棒，并使用共形导电层形成每个控制电极，同时自动实现所需的对准精度。

公开(公告)号：US5530262A

公开(公告)日：1996-06-25

申请号：US541763

申请日：1995-05-25

Applicant: John E. Cronin ,  Kent E. Morrett ,  Michael D. Potter ,  Matthew J. Rutten

Inventor： John E. Cronin ,  Kent E. Morrett ,  Michael D. Potter ,  Matthew J. Rutten

IPC: H01J9/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/06

CPC classification number: H01L27/10852 ,  H01J9/025 ,  H01L27/108 ,  H01J2201/319

Abstract: Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.

Abstract translation: 描述了双向场致发射器件（FED）和相关的制造方法。 基本装置包括第一单一场发射结构和相邻定位的第二单一场致发射结构。 第一单一结构具有第一阴极部分和第一阳极部分，而第二整体结构具有第二阴极部分和第二阳极部分。 结构被定位成使得第一阴极部分与第二阳极部分相对，使得电子可以通过场发射流动，并且第二阴极部分与第一阳极部分相反，使得电子可以通过场发射而流动。 控制机构定义设备是否有效，而施加到第一和第二单一结构的偏置电压限定电流的方向。 存在这种双向FED的多种应用。 例如，讨论了FED DRAM单元，以及用于制造各种器件的方法。

公开(公告)号：US5233263A

公开(公告)日：1993-08-03

申请号：US722768

申请日：1991-06-27

Applicant: John E. Cronin ,  Kent E. Morrett ,  Michael D. Potter ,  Timothy D. Sullivan

Inventor： John E. Cronin ,  Kent E. Morrett ,  Michael D. Potter ,  Timothy D. Sullivan

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J1/3042

Abstract: Lateral cathode field emission devices and methods of fabrication are set forth. Conventional integrated circuit fabrication techniques are advantageously used to produce the lateral FEDs. Cathode tips on the order of several hundred angstroms are consistently obtained as well as exact spacing of the cathode to gate and cathode to anode. Various cathode and device configurations are described, including a circular field emission device. A single integrated structure having multiple cathodes and multiple gates is possible to perform various logic operations and/or enhance current output from the device. Multiple field effect devices, with cathodes disposed parallel or perpendicular to the substrate, are integrally coupled through a sharing of one or more metallization layers definitive of the elements of the devices. Significant advantages in current density and circuit layout can be obtained. Methods for fabricating the various devices are also explained.

Abstract translation: 阐述了侧向阴极场发射器件及其制造方法。 传统的集成电路制造技术有利地用于产生横向FED。 一贯获得数百埃数量级的阴极尖端，以及阴极与栅极和阴极与阳极的精确间距。 描述了各种阴极和器件配置，包括圆形场致发射器件。 具有多个阴极和多个栅极的单个集成结构可以执行各种逻辑操作和/或增强来自该器件的电流输出。 具有平行或垂直于衬底设置的阴极的多个场效应器件通过共享设备元件的一个或多个金属化层而被一体地耦合。 可以获得电流密度和电路布局的显着优点。 还说明了制造各种装置的方法。

公开(公告)号：US20080262740A1

公开(公告)日：2008-10-23

申请号：US11738214

申请日：2007-04-20

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: G01N33/48 ,  G01N15/00 ,  G01N31/00

CPC classification number: C12Q1/006 ,  G01N27/3276 ,  G01N33/5308 ,  G01N33/5438 ,  G01N33/92 ,  G01N2333/575

Abstract: A system for sensing a presence and/or a concentration of a target substance in a fluid has a sensor and a processor coupled to the sensor. The sensor has a test probe having at least first and second test electrodes, wherein at least the first test electrode is functionalized to create a permittivity change in the area between the first and second test electrodes in the presence of the target substance. The sensor also has a reference probe having at least first and second reference electrodes. The processor is configured to determine at least one permittivity-based metric for the test probe; determine the at least one permittivity-based metric for the reference probe; and determine the presence and/or the concentration of the target substance based on the at least one permittivity-based metric for the test probe and the at least one permittivity-based metric for the reference probe. Related methods are disclosed.

Abstract translation: 用于感测流体中目标物质的存在和/或浓度的系统具有耦合到传感器的传感器和处理器。 传感器具有至少具有第一和第二测试电极的测试探针，其中至少第一测试电极在目标物质存在下在第一和第二测试电极之间的面积上产生介电常数变化。 传感器还具有至少具有第一和第二参考电极的参考探针。 所述处理器被配置为确定所述测试探针的至少一个介电常数度量; 确定参考探针的至少一个介电常数度量; 并且基于所述测试探针的所述至少一个基于介电常数的量度和所述参考探针的所述至少一个介电常数度量来确定所述目标物质的存在和/或浓度。 公开了相关方法。

公开(公告)号：US07408236B2

公开(公告)日：2008-08-05

申请号：US11712724

申请日：2007-03-01

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01L29/00

CPC classification number: H01L21/28176 ,  H01J2237/316

Abstract: A method and system for injecting charge includes providing a first material on a second material and injecting charge into the first material to trap charge at an interface between the first and second materials. The thickness of the first material is greater than a penetration depth of the injected charge in the first material.

Abstract translation: 用于注入电荷的方法和系统包括在第二材料上提供第一材料并将电荷注入到第一材料中以在第一和第二材料之间的界面处收集电荷。 第一材料的厚度大于第一材料中注入的电荷的穿透深度。