Abstract:
The color display device includes a colored light generation unit for repetitively generating a plurality of colored lights in a time sequence with a predetermined frequency, and an image generation unit for processing said plurality of colored lights, so as to generate an image corresponding to each of the plurality of colored lights generated in a time sequence. The said predetermined frequency is 180 Hz or more.
Abstract:
A semiconductor memory device includes a memory cell array comprising a plurality of memory sub-array blocks arranged in a row direction, a plurality of sub-word lines which extend in the row direction to connect with the plurality of memory cells, a plurality of sub-word-line drivers, a plurality of sub-word-line level shifters, a first pre-decoded line group which is connected with the respective sub-word-line drivers, a second pre-decoded line group which extends across the memory sub-array block in the row direction and is connected with the sub-word-line level shifters, and a pre-row-decoder which supplies information of a selected cell to the first and second pre-decoded lines.
Abstract:
A projector including: an adjustment section which generates edit image information for projecting an edit image including a content image based on input image information and a position change detection image at least partially provided outside the content image; a sensing section which senses a screen onto which the edit image is projected and generates sensing information indicating a sensed image; a projection section which projects the edit image based on the edit image information; and a determination section which determines whether or not a relative position between the projection section and the screen has changed based on the sensing information.
Abstract:
A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.
Abstract:
A semiconductor memory device includes a memory cell array comprising a plurality of memory sub-array blocks arranged in a row direction, a plurality of sub-word lines which extend in the row direction to connect with the plurality of memory cells, a plurality of sub-word-line drivers, a plurality of sub-word-line level shifters, a first pre-decoded line group which is connected with the respective sub-word-line drivers, a second pre-decoded line group which extends across the memory sub-array block in the row direction and is connected with the sub-word-line level shifters, and a pre-row-decoder which supplies information of a selected cell to the first and second pre-decoded lines.
Abstract:
A semiconductor integrated circuit includes a first logic circuit to which a first power supply voltage is applied and which outputs a first signal, a first level conversion circuit to which the first power supply voltage and a second power supply voltage having an amplitude of second voltage level different from the first power supply voltage are supplied and which outputs a second signal, a second logic circuit to which the second power supply voltage is applied and which outputs a third signal, and a second level conversion circuit which is connected between the first and second logic circuits, to which the first and second power supply voltages are applied, and which level-converts the third signal of the second voltage level output from the second logic circuit to the first voltage level and outputs a fourth signal.
Abstract:
An image display system, image processing method, and program that make it possible to reproduce the colors of an image more rapidly in accordance with the user's preferences. The image display system includes: a color gamut calculation section that calculates a target color gamut based on a target profile within a target profile storage section that was selected by the user, and also calculates a displayable color gamut based on a projector profile within a projector profile storage section and environmental information from a colored-light sensor that detects the visual environment; a matrix generation section that generates a conversion matrix according to the relationship between the target color gamut and the displayable color gamut; and a matrix converter section that uses the thus-generated conversion matrix to convert image information; whereby image information is converted and image is displayed.
Abstract:
A linear random N-substituted acrylamide copolymer comprising 65 to 99% by mole of ethylene units, 1 to 15% by mole of acrylate units and 1 to 35% by mole of acrylamide units, the copolymer having a weight average molecular weight of 1000 to 50000, and an aqueous composition, a resin film, a laminate, recording paper and a foamed article comprising the N-substituted acrylamide copolymer, respectively. The N-substituted acrylamide copolymer is excellent in antistatic ability for thermoplastic resins and does not lower physical properties such as transparency and elongation of films and articles which are formed from a thermoplastic resin. Moreover, the N-substituted acrylamide copolymer is excellent in anti-blocking ability so that the copolymer can be suitably used for various uses.
Abstract:
Hollow water-absorbing polyester filaments each having a number of fine caves which are evenly distributed in at least a portion of the filament and through which the hollow is connected to the outside of the filament, are produced (1) by preparing hollow filaments from a blend of a principal polyester component and a cave-forming agent consisting of at least one member selected from:(i) copolyesters containing an additional divalent organic sulfonic acid compound moiety of the formula (II): ##STR1## wherein Z is a trivalent aromatic or aliphatic hydrocarbon radical, M.sup.1 is H or metal atom, R.sup.1 is an ester-forming organic radical and R.sup.2 is an H atom or ester-forming organic radical;(ii) phosphorus compounds of the formula (III): ##STR2## wherein R.sup.3 is a monovalent organic radical, X is --OR.sup.4, wherein R.sup.4 is an H atom or a monovalent organic radical, --OM.sup.3, wherein M.sup.3 is a metal atom, or a monovalent organic radical, M.sup.2 is a metal atom and m=0 or 1, and;(iii) aromatic carboxy-sulfonic acid compounds of the formula (IV): ##STR3## wherein Y is an H atom or ester-forming organic radical, M.sup.4 and M.sup.5 each are a metal atom, respectively, and n=1 or 2, and (2) by removing the at least a portion of cave-forming agent and a portion of the principal polyester component from the resultant hollow filaments so as to form numerous concaves on the peripheral and hollow surfaces, numerous pores in the body of the filament, and numerous channels through which the pores are connected to each other and to the concaves, the concaves and pores having a longitudinal size of 50 times or less the lateral size thereof, which is 0.01 to 3 microns.
Abstract:
A double layered yarn having a sheath and core structure is prepared through a roving process, drawing process or fine spinning process. The sheath portion of the yarn is composed of staple fibers which have a high thermal shrinkage in boiling water of at least 5%, and the blended fiber ratio of which is between 50% and 25%. The core portion of the yarn is composed of staple fibers which have a property being spontaneously extensible, and the blended fiber ratio of which is between 25% and 75%. The double layered yarn is subjected to a heat treatment in hot water, and a bulky spun yarn which comprises staple fibers A and B is obtained. The staple fibers A are concentrated toward the inside of the bulky spun yarn after they are shrunk. The ends of staple fibers B are held within the inside of the bulky spun yarn, and the intermediate portions of fibers B are bulged as a loop from the body portion of the bulky spun yarn, after the fibers B are spontaneously extended.