Method for controlling virtual reality content and wearable electronic device supporting the same

    公开(公告)号:US12287914B2

    公开(公告)日:2025-04-29

    申请号:US18368932

    申请日:2023-09-15

    Abstract: A wearable electronic device includes a display, and at least one processor connected to the display, where the at least one processor is configured to obtain a first space necessary for a motion of a user corresponding to a motion of an avatar, the motion of the avatar being performed in a virtual space of virtual reality (VR) content displayed through the display, obtain a second space for safely performing the motion of the user, set a scale value, based on the first space and the second space, and based on obtaining the motion of the user, determine, using the set scale value, a size of the motion of the avatar, the motion of the avatar being performed by the motion of the user.

    Semiconductor system
    22.
    发明授权

    公开(公告)号:US12287743B2

    公开(公告)日:2025-04-29

    申请号:US18215036

    申请日:2023-06-27

    Abstract: A semiconductor system including a transmitter configured to output a plurality of data as a plurality of data input/output signals through a plurality of channels based on a matrix E, and a receiver configured to generate the plurality of data by differentially amplifying the plurality of data input/output signals received through the plurality of channels based on a matrix D, in which all components of the matrix E and the matrix D are integers, a product matrix of the matrix D and the matrix E is a diagonal matrix, a sum of the components of each row of the matrix D is 0, and a sum of absolute values of the components of each column of the matrix D is less than or equal to a threshold value.

    Displaying device-usage information

    公开(公告)号:US12287720B2

    公开(公告)日:2025-04-29

    申请号:US17879246

    申请日:2022-08-02

    Abstract: In one embodiment, a method may include determining one or more of (1) an amount of use of a display screen of a user's client computing device during a period of time, or (2) a frequency of unlocks of the display screen during the period of time. The method may include displaying, on a lock screen of the client computing device, one or more of: (1) the amount of use of the display screen during the period of time, or (2) the frequency of unlocks of the display screen during the period of time.

    Wafer processing equipment and method of manufacturing semiconductor device

    公开(公告)号:US12287147B2

    公开(公告)日:2025-04-29

    申请号:US17493346

    申请日:2021-10-04

    Abstract: A fluid supply device configured to supply a processing fluid to a wafer processing device that includes a chamber is provided. The fluid supply device includes a reservoir configured to change the processing fluid into a supercritical fluid state; a wafer protecting device comprising a body configured to prevent a wafer in the chamber of the wafer processing device from being damaged by the processing fluid in the supercritical fluid state by receiving the processing fluid in the supercritical fluid state and limiting a speed of the processing fluid; and a fluid supply line configured to provide a path for the processing fluid between the reservoir and the wafer protecting device and a path for the processing fluid between the wafer protecting device and the wafer processing device.

    IMAGE SENSOR AND IMAGE SENSING DEVICE INCLUDING THE SAME

    公开(公告)号:US20250133842A1

    公开(公告)日:2025-04-24

    申请号:US18754976

    申请日:2024-06-26

    Abstract: An image sensor includes a pixel array including a plurality of unit pixels and a driving circuitry provided around the pixel array and driving the plurality of unit pixels. Each of the plurality of unit pixels includes a first region ad a second region. The first region includes a first photodiode, a first transfer transistor connected to the first photodiode, a first floating diffusion node connected to the first transfer transistor, and a (1-1)-th contact connected to a second floating diffusion node, and the second region includes a second photodiode, a second transfer transistor connected to the second photodiode, a (1-2)-th contact electrically connected to the (1-1)-th contact through connection metal wiring, and a second contact provided to a third floating diffusion node connected to the second transfer transistor.

    IMAGE SENSOR INCLUDING GROUND REGION

    公开(公告)号:US20250133841A1

    公开(公告)日:2025-04-24

    申请号:US18738595

    申请日:2024-06-10

    Abstract: An image sensor is provided. The image sensor includes: a substrate that includes a plurality of pixels, each of which includes a left sub-pixel and a right sub-pixel; a well region in the substrate on each of the plurality of pixels, the well region connecting the left sub-pixel and the right sub-pixel to each other; a pixel separation part that separates the plurality of pixels from each other and extends in the substrate between the left sub-pixel and the right sub-pixel; a left transfer transistor and a first logic transistor on the left sub-pixel; a right transfer transistor and a second logic transistor on the right sub-pixel; and a ground region in the substrate on one of the left sub-pixel and the right sub-pixel, and in contact with the well region. The ground region is adjacent to a corner of each of the plurality of pixels.

    SEMICONDUCTOR DEVICE
    29.
    发明申请

    公开(公告)号:US20250133787A1

    公开(公告)日:2025-04-24

    申请号:US19005034

    申请日:2024-12-30

    Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

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