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公开(公告)号：US11935772B2
公开(公告)日：2024-03-19
申请号：US17381507
申请日：2021-07-21
发明人： Seohyun Kim , Younghoo Kim , Sangjine Park , Kuntack Lee , Jihoon Jeong
IPC分类号： H01L21/677
CPC分类号： H01L21/67703 , H01L21/67739
摘要： An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.
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公开(公告)号：US11640115B2
公开(公告)日：2023-05-02
申请号：US17466101
申请日：2021-09-03
发明人： Jihoon Jeong , Seohyun Kim , Sukhoon Kim , Younghoo Kim , Sangjine Park , Kuntack Lee
摘要： A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.
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公开(公告)号：US09136120B2
公开(公告)日：2015-09-15
申请号：US14573845
申请日：2014-12-17
发明人： Young Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： H01L21/302 , H01L21/02 , C09K13/04 , C23F1/16 , C09K13/06 , H01L21/311 , H01L29/66 , H01L29/788 , H01L29/792 , H01L27/115
CPC分类号： H01L21/02658 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
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4.发明授权公开(公告)号：US11527399B2
公开(公告)日：2022-12-13
申请号：US16744667
申请日：2020-01-16
发明人： Byungkwon Cho , Sangjine Park , Yongsun Ko , Seulgee Jeon , Jihoon Jeong , Seongsik Hong
摘要： Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.
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公开(公告)号：US20220326617A1
公开(公告)日：2022-10-13
申请号：US17488456
申请日：2021-09-29
发明人： Sangjine Park , Jihoon Jeong , Younghoo Kim , Kuntack Lee
IPC分类号： G03F7/38 , H01L21/02 , H01L21/687
摘要： A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.
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公开(公告)号：US11302526B2
公开(公告)日：2022-04-12
申请号：US16561078
申请日：2019-09-05
发明人： Sangjine Park , Byung-Kwon Cho , Jihoon Jeong , Youngtak Kim , Yongsun Ko , Seulgee Jeon
摘要： A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.
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公开(公告)号：US20220075268A1
公开(公告)日：2022-03-10
申请号：US17466101
申请日：2021-09-03
发明人： Jihoon Jeong , Seohyun Kim , Sukhoon Kim , Younghoo Kim , Sangjine Park , Kuntack Lee
摘要： A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.
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公开(公告)号：US10825698B2
公开(公告)日：2020-11-03
申请号：US15845236
申请日：2017-12-18
发明人： Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Kuntack Lee
摘要： Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.
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9.发明申请公开(公告)号：US20180366348A1
公开(公告)日：2018-12-20
申请号：US15845236
申请日：2017-12-18
发明人： Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Kuntack Lee
CPC分类号： H01L21/67034 , B08B3/08 , B08B2203/007 , F26B3/00 , F26B5/005 , H01L21/02057 , H01L21/02101 , H01L21/6704 , H01L21/67051 , H01L21/67109 , H01L21/67173 , H01L21/67219 , H01L21/67248
摘要： Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.
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10.发明申请COMPOSITIONS FOR ETCHING AND METHODS OF FORMING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开用于蚀刻的组合物和使用其形成半导体器件的方法公开(公告)号：US20150104932A1
公开(公告)日：2015-04-16
申请号：US14573845
申请日：2014-12-17
发明人： Young Taek Hong , Jinuk Lee , Junghun Lim , Jaewan Park , Chanjin Jeong , Hoon Han , Seonghwan Park , Yanghwa Lee , Sang Won Bae , Daehong Eom , Byoungmoon Yoon , Jihoon Jeong , Kyunghyun Kim , Kyounghwan Kim , ChangSup Mun , Se-Ho Cha , Yongsun Ko
IPC分类号： H01L21/02 , H01L27/115 , C09K13/06
CPC分类号： H01L21/02658 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物。 硅化合物包括硅原子，具有与硅原子结合的氨基的原子团以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。
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