Abstract:
An image sensor for high-speed data readout is provided. The image sensor includes a line memory block temporarily storing a digital signal in unit of lines which is generated based on an analog signal output from a pixel array. The line memory block includes a plurality of line memories, a plurality of data line pairs respectively connecting the line memories to a sense amplifying unit, and a plurality of data line prechargers each including at least two precharge units separately connected with a corresponding one of the data line pairs to precharge the corresponding data line pair with a predetermined precharge voltage. Accordingly, the image sensor performs high-speed digital signal readout based on precharge operation of the data line prechargers.
Abstract:
An image sensor comprises an active pixel sensor (APS) array, a first analog-to-digital converter (ADC), and a ramp signal generator. The APS array has includes a plurality of pixels of arranged in a second order two-dimensional matrix, and wherein the APS array generates a reset signal and an image signal for each pixel of selected columns. The first ADC has includes correlated double sampling (CDS) circuits for each column of the APS array, and wherein the first ADC generates a digital code corresponding to the difference between the reset signal and the image signal using an output ramp signal that is applied to the CDS circuits for each column. The ramp generator generates the output ramp signal in which a low illumination portion and a high illumination portion have different slopes.
Abstract:
Example embodiments relate to a pixel structure of a CMOS image sensor, and associated methods. The pixel structure may include a substrate of a first-conductivity, a photodiode region of a second conductivity in the first-conductivity substrate, and a capacitor electrode on the second-conductivity photodiode region.
Abstract:
An electrostatic discharge (ESD) protecting circuit for effectively discharging an overcurrent applied to a semiconductor circuit device, by providing a plurality of current paths. The ESD protecting circuit comprises a first discharging current path for discharging an overcurrent from the I/O pad to a first power supply, a second discharging current path for discharging the overcurrent from the I/O pad to a second power supply providing power for the internal circuit and a third discharging current path formed between the first power supply and the second power supply.
Abstract:
An image sensor and an image processing system including the same are provided. The image sensor includes a pixel array including a plurality of pixels each connected to one of first through m-th column lines to output a pixel signal, where “m” is an integer of at least 2; analog-to-digital converters each configured to receive the pixel signal corresponding to one of the first through m-th column lines, to compare the pixel signal with a ramp signal, and to convert the pixel signal to a digital pixel signal; and a blocking circuit connected to an input terminal of at least one of the analog-to-digital converters to block an influence of an operation of others among the analog-to-digital converters.
Abstract:
Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.
Abstract:
An amplifier is provided. The amplifier includes a differential amplifier including a tail, a current mirror connected between output terminals of the differential amplifier and a power line receiving a supply voltage, and a first switching circuit for connecting and disconnecting one of the output terminals of the differential amplifier to and from the tail in response to a first switching signal.
Abstract:
Provided are a pixel sensor array and a complementary metal-oxide semiconductor (CMOS) image sensor including the same. The pixel sensor array includes a photoelectric transformation element configured to generate electric charges in response to incident light. A signal transmitting circuit is configured to output the electric charges accumulated in the photoelectric transformation element to a first node based on a first control signal, change an electric potential of the first node to an electric potential of a second signal line based on a second control signal, and output a signal sensed in the first node to a first signal line based on a third control signal. A switch element is configured to connect a supply power terminal to the second signal line based on a fourth control signal. A comparator connected to the first signal line and the second signal line and configured to compare a voltage of the signal and a voltage of a reference signal.
Abstract:
A two-path sigma-delta analog-to-digital converter and an image sensor including the same are provided. The two-path sigma-delta analog-to-digital converter includes at least one integrator configured to integrate a first integrator input signal during a second half cycle of a clock signal and integrate a second integrator input signal during a first half cycle of the clock signal by using a single operational amplifier; a quantizer configured to quantize integrated signals from the at least one integrator and output a first digital signal and a second digital signal; and a feedback loop configured to feed back the first and second digital signals to an input of the at least one integrator. A first analog signal and a second analog signal respectively input from two input paths are respectively converted to the first and second digital signals using the single operational amplifier, thereby increasing power efficiency and reducing an area.
Abstract:
In one embodiment, an analog-to-digital converter (ADC) includes a comparator and a supply circuit. The comparator is configured to compare an input signal to a reference signal. The supply circuit is configured to supply the reference signal. The supply circuit is configured to provide different circuit configurations for supplying the reference signal during different stages of analog-to-digital conversion such that the reference signal is scaled in substantially a same manner during at least two of the stages.