摘要:
Example embodiments relate to a pixel structure of a CMOS image sensor, and associated methods. The pixel structure may include a substrate of a first-conductivity, a photodiode region of a second conductivity in the first-conductivity substrate, and a capacitor electrode on the second-conductivity photodiode region.
摘要:
An image sensor includes a delta-sigma analog-to-digital converter (ADC) including a delta-sigma modulator (DSM) and a voltage adjusting circuit. The DSM is configured to perform delta-sigma modulation on an analog signal from a unit pixel. The delta-sigma ADC is configured to convert the analog signal to a digital signal. The voltage adjusting circuit includes a replica inverter having a same configuration as at least one inverter included in the DSM. The voltage adjusting circuit is configured to adjust a power supply voltage and an input voltage provided to the at least one inverter based on a current flowing in the replica inverter.
摘要:
A ratio-independent switched capacitor amplifier includes a first sampling circuit configured to sample a first input voltage as a first sampling voltage and to double a level of the first sampling voltage during an interval in which the first input voltage is cut off; a second sampling circuit configured to sample a second input voltage as a second sampling voltage and to double a level of the second sampling voltage during an interval in which the second input voltage is cut off; and a differential amplifier circuit configured to output a difference between the first sampling voltage and the second sampling voltage.
摘要:
A ratio-independent switched capacitor amplifier includes a first sampling circuit configured to sample a first input voltage as a first sampling voltage and to double a level of the first sampling voltage during an interval in which the first input voltage is cut off; a second sampling circuit configured to sample a second input voltage as a second sampling voltage and to double a level of the second sampling voltage during an interval in which the second input voltage is cut off; and a differential amplifier circuit configured to output a difference between the first sampling voltage and the second sampling voltage.
摘要:
Provided is a pixel circuit in a CMOS image sensor, a structure thereof, and a method of operating the same. The pixel includes: a photodiode; a floating diffusion node connected to the photodiode through a first switch; a source follower responsive to a voltage of the floating diffusion node. The voltage of the floating diffusion node is applied to the source follower through capacitance coupling.
摘要:
A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.
摘要:
A method for operating an image capture device having a sensor with an array of first and second pixels includes capturing an image a plurality of times with the second pixels to produce a corresponding second image signal, the second pixels being white pixels, capturing the image a single time with the first pixels to produce a corresponding first image signal, inputting selecting signals to the sensor via a row driver to obtain the first and second image signals from the first and second pixels, respectively, and converting the first and second image signals to respective digital values via an analog-to-digital converter.
摘要:
A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.
摘要:
A complementary metal oxide semiconductor (CMOS) image sensor includes a photodiode, a switch and a comparator. The switch transfers a sensing signal to a sensing node from the photodiode. The comparator, which is directly connected to the sensing node, compares the sensing signal of the sensing node with a reference signal. The comparator outputs a signal corresponding to a voltage difference between the sensing signal and the reference signal.
摘要:
An analog-to-digital converter (ADC) includes first and second circuits, a differential amplifier, a comparator and a digital-to-analog converter (DAC). The first circuit samples a reset voltage, amplifies the sampled reset voltage, and subtracts a first reference voltage from the amplified reset voltage to produce a first difference. The second circuit samples a signal voltage, amplifies the sampled signal voltage, and subtracts a second reference voltage from the amplified signal voltage to produce a second difference. The differential amplifier produces a third difference based a comparison of the first and second differences from the first and second circuits. The comparator compares an output of the differential amplifier with at least one predetermined comparison voltage and outputs a comparison result as a digital value. The DAC is connected to the first and second circuits and the comparator, and controls the first and second reference voltages in response to the digital value.