公开(公告)号：US6025892A

公开(公告)日：2000-02-15

申请号：US839268

申请日：1997-04-17

申请人： Katsuhiro Kawai ,  Shinya Yamakawa ,  Masaya Okamoto ,  Mikio Katayama

发明人： Katsuhiro Kawai ,  Shinya Yamakawa ,  Masaya Okamoto ,  Mikio Katayama

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F1/133345 ,  G02F1/134336 ,  G02F1/1345 ,  G02F1/136213 ,  Y10S438/937

摘要： An active matrix substrate of the present invention includes: a substrate; a plurality of first lines formed on the substrate to be parallel to each other; an insulating film covering the first lines; a plurality of second lines formed on the substrate extending to cross the first lines with the insulating film interposed therebetween; a plurality of switching elements provided near respective crossings of the first lines and the second lines; and a plurality of pixel electrodes which are arranged in a matrix on the insulating film and which are connected to the switching elements, respectively. The insulating film is partially removed prior to forming the second lines and the pixel electrodes so that the removed portions of the insulating film correspond to the gaps.

摘要翻译： 本发明的有源矩阵基板包括：基板; 在所述基板上形成为彼此平行的多条第一线; 覆盖第一线的绝缘膜; 形成在所述基板上的多个第二线，其间延伸有与所述第一线交叉的绝缘膜; 设置在所述第一线和所述第二线的各个交叉点附近的多个开关元件; 以及多个像素电极，分别以矩阵形式布置在绝缘膜上并分别连接到开关元件。 在形成第二线和像素电极之前，绝缘膜被部分去除，使得绝缘膜的去除部分对应于间隙。

公开(公告)号：US09070783B2

公开(公告)日：2015-06-30

申请号：US12530797

申请日：2008-02-27

申请人： Shinya Yamakawa ,  Yasushi Tateshita

发明人： Shinya Yamakawa ,  Yasushi Tateshita

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66

CPC分类号： H01L27/0922 ,  H01L21/28518 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/8238 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823864 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/45 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848

摘要： It is to enhance a current increasing effect by increasing a stress applied on a channel of a transistor. The invention is characterized by comprising: side wall insulating films 33 and 53 formed on a semiconductor substrate 11 with trenches 39 and 59 which are formed by removing dummy gates; gate electrodes 43 and 63 formed within the trenches 39 and 59 through a gate insulating film 41; first and second stress applying films 21 and 22 respectively formed along the side wall insulating films 33 and 53 over the semiconductor substrate 11; and source/drain regions 35, 36, 55, and 56 which are formed in the semiconductor substrate 11 on the both sides of the gate electrodes 43 and 63, in that the stress applying films 21 and 22 are formed before the first trench 39 and the second trench 59 are formed.

摘要翻译： 通过增加施加在晶体管的沟道上的应力来增强电流增加的效果。 本发明的特征在于包括：形成在具有通过去除伪栅极形成的沟槽39和59的半导体衬底11上的侧壁绝缘膜33和53; 通过栅极绝缘膜41形成在沟槽39和59内的栅电极43和63; 分别沿着半导体基板11上的侧壁绝缘膜33和53形成的第一和第二应力施加膜21和22; 以及形成在栅电极43和63的两侧上的半导体衬底11中的源极/漏极区域35,36,55和56，其中应力施加膜21和22形成在第一沟槽39和 形成第二沟槽59。

公开(公告)号：US08780247B2

公开(公告)日：2014-07-15

申请号：US13053427

申请日：2011-03-22

申请人： Shinya Yamakawa

发明人： Shinya Yamakawa

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/06

摘要： Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.

摘要翻译： 本文公开了一种固态摄像元件，包括：光电转换区域; 晶体管 第一导电类型的隔离区域，被配置为将光电转换区域和晶体管彼此隔离; 具有形成在其中的第一导电类型的光电转换区域，晶体管和隔离区域的第一导电类型的阱区域; 接触部分，被配置为提供用于将所述阱区域固定到给定电位的电位; 以及第一导电类型的杂质区域，形成为在接触部分和光电转换区域之间的第一导电类型的隔离区域中从第一导电类型的隔离区域的表面沿深度方向延伸，以及 具有比第一导电类型的隔离区的杂质浓度足够高的杂质浓度。

公开(公告)号：US08242558B2

公开(公告)日：2012-08-14

申请号：US12491652

申请日：2009-06-25

申请人： Shinya Yamakawa

发明人： Shinya Yamakawa

IPC分类号： H01L29/78

CPC分类号： H01L29/7845 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/7834

摘要： Disclosed herein is a semiconductor device including: a gate electrode formed in a recess dug in the surface of a semiconductor substrate, with a gate insulating film interposed between the gate electrode and the semiconductor substrate; a source-drain diffusion layer formed on that surface of the semiconductor substrate which is adjacent to both sides of the gate electrode; and a stress applying layer which is formed deep from the surface of the semiconductor substrate in such a way as to cover the surface of the source-drain diffusion layer.

摘要翻译： 本发明公开了一种半导体器件，包括：栅电极，其形成在半导体衬底的表面中的凹部中，栅极绝缘膜插入在栅电极和半导体衬底之间; 源极 - 漏极扩散层，形成在所述半导体衬底的与所述栅电极的两侧相邻的表面上; 以及从半导体衬底的表面形成为深度覆盖源极 - 漏极扩散层的表面的应力施加层。

公开(公告)号：US08228469B2

公开(公告)日：2012-07-24

申请号：US13137885

申请日：2011-09-20

申请人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

发明人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133504 ,  G02F1/133553 ,  G02F1/133555 ,  G02F1/134309 ,  G02F1/1362 ,  G02F2001/133557 ,  G02F2001/133638 ,  G02F2001/13712 ,  G02F2203/09

摘要： A liquid crystal display device includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; a first polarizer provided on a surface of the first substrate which is on the opposite side to the liquid crystal layer; a second polarizer provided on a surface of the second substrate which is on the opposite side to the liquid crystal layer; a first phase compensation element provided between the first polarizer and the liquid crystal layer; and a second phase compensation element provided between the second polarizer and the liquid crystal layer. A plurality of pixel areas are provided for display. The first substrate includes at least one transmissive electrode, and the second substrate includes a reflective electrode region and a transmissive electrode region in correspondence with each of the plurality of pixel areas.

公开(公告)号：US20110234873A1

公开(公告)日：2011-09-29

申请号：US13053427

申请日：2011-03-22

申请人： Shinya Yamakawa

发明人： Shinya Yamakawa

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/06

摘要： Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.

摘要翻译： 本文公开了一种固态摄像元件，包括：光电转换区域; 晶体管 第一导电类型的隔离区域，被配置为将光电转换区域和晶体管彼此隔离; 具有形成在其中的第一导电类型的光电转换区域，晶体管和隔离区域的第一导电类型的阱区域; 接触部分，被配置为提供用于将所述阱区域固定到给定电位的电位; 以及第一导电类型的杂质区域，形成为在接触部分和光电转换区域之间的第一导电类型的隔离区域中从第一导电类型的隔离区域的表面沿深度方向延伸，以及 具有比第一导电类型的隔离区的杂质浓度足够高的杂质浓度。

公开(公告)号：US20070002227A1

公开(公告)日：2007-01-04

申请号：US11507597

申请日：2006-08-22

申请人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

发明人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133504 ,  G02F1/133553 ,  G02F1/133555 ,  G02F1/134309 ,  G02F1/1362 ,  G02F2001/133557 ,  G02F2001/133638 ,  G02F2001/13712 ,  G02F2203/09

摘要： A liquid crystal display device includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; a first polarizer provided on a surface of the first substrate which is on the opposite side to the liquid crystal layer; a second polarizer provided on a surface of the second substrate which is on the opposite side to the liquid crystal layer; a first phase compensation element provided between the first polarizer and the liquid crystal layer; and a second phase compensation element provided between the second polarizer and the liquid crystal layer. A plurality of pixel areas are provided for display. The first substrate includes at least one transmissive electrode, and the second substrate includes a reflective electrode region and a transmissive electrode region in correspondence with each of the plurality of pixel areas.

公开(公告)号：US07151581B2

公开(公告)日：2006-12-19

申请号：US11196749

申请日：2005-08-04

申请人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

发明人： Masumi Kubo ,  Yozo Narutaki ,  Shogo Fujioka ,  Yuko Maruyama ,  Takayuki Shimada ,  Youji Yoshimura ,  Mikio Katayama ,  Yutaka Ishii ,  Shinya Yamakawa ,  Atsushi Ban

IPC分类号： G02F1/1335

CPC分类号： G02F1/133371 ,  G02F1/133504 ,  G02F1/133553 ,  G02F1/133555 ,  G02F1/134309 ,  G02F1/1362 ,  G02F2001/133557 ,  G02F2001/133638 ,  G02F2001/13712 ,  G02F2203/09

摘要： A liquid crystal display device includes a first substrate; a second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; a first polarizer provided on a surface of the first substrate which is on the opposite side to the liquid crystal layer; a second polarizer provided on a surface of the second substrate which is on the opposite side to the liquid crystal layer; a first phase compensation element provided between the first polarizer and the liquid crystal layer; and a second phase compensation element provided between the second polarizer and the liquid crystal layer. A plurality of pixel areas are provided for display. The first substrate includes at least one transmissive electrode, and the second substrate includes a reflective electrode region and a transmissive electrode region in correspondence with each of the plurality of pixel areas.

摘要翻译： 液晶显示装置包括：第一基板; 第二基板; 介于所述第一基板和所述第二基板之间的液晶层; 第一偏振器，设置在与液晶层相反的一侧的第一基板的表面上; 第二偏振器，设置在与液晶层相反的一侧的第二基板的表面上; 设置在所述第一偏振器和所述液晶层之间的第一相位补偿元件; 以及设置在第二偏光器和液晶层之间的第二相位补偿元件。 提供多个像素区域用于显示。 第一基板包括至少一个透射电极，并且第二基板包括与多个像素区域中的每一个对应的反射电极区域和透射电极区域。

公开(公告)号：US07126157B2

公开(公告)日：2006-10-24

申请号：US10921620

申请日：2004-08-19

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US20060231840A1

公开(公告)日：2006-10-19

申请号：US11450810

申请日：2006-06-08

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L29/04

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.