Scouring method
    23.
    发明申请
    Scouring method 审中-公开
    擦洗方法

    公开(公告)号:US20060000775A1

    公开(公告)日:2006-01-05

    申请号:US11179391

    申请日:2005-07-12

    Abstract: A method and apparatus for removing fouling materials from the surface of a plurality of porous membranes (9) arranged in a membrane module (4) by providing, from within the module, by means (10) other than gas passing through the pores of said membranes, gas bubbles in a uniform distribution relative to the porous membrane array such that the bubbles move past the surfaces of the membranes (9) to dislodge fouling materials therefrom. The membranes (9) are arranged in close proximity to one another and mounted to prevent excessive movement therebetween. The bubbles also produce vibration and rubbing together of the membranes to further assist removal of fouling materials.

    Abstract translation: 一种从多个多孔膜(9)的表面排出污垢材料的方法和装置,该多孔隔膜(9)通过从模块内部通过除气体之外的装置(10)提供布置在膜组件 膜,相对于多孔膜阵列均匀分布的气泡,使得气泡通过膜(9)的表面移动以从其中去除污垢材料。 膜(9)彼此靠近地布置并且被安装以防止它们之间的过度移动。 气泡也会产生振动并将膜摩擦在一起,以进一步帮助去除污垢物质。

    Methods of minimising the effect of integrity loss in hollow fibre membrane modules
    24.
    发明申请
    Methods of minimising the effect of integrity loss in hollow fibre membrane modules 有权
    最小化中空纤维膜组件完整性损失影响的方法

    公开(公告)号:US20050145556A1

    公开(公告)日:2005-07-07

    申请号:US11015655

    申请日:2004-12-16

    CPC classification number: B01D63/02 B01D63/021 B01D63/022 B01D65/104 B01D69/08

    Abstract: A method and apparatus for reducing the effect of integrity loss in a hollow fibre membrane module, said module including a plurality of hollow fibre membranes (5), at least one end of the fibre membranes (5) being supported in a pot (6), the method including the step of increasing flow resistance of the liquid through the lumen (8) of the fibre membrane (5) in the region of the pot (6).

    Abstract translation: 一种降低中空纤维膜组件完整性损失影响的方法和装置,所述模块包括多个中空纤维膜(5),所述纤维膜(5)的至少一端支撑在罐(6)中, 该方法包括在罐(6)的区域中增加通过纤维膜(5)的内腔(8)的液体的流动阻力的步骤。

    Plasma etching installation
    27.
    发明授权
    Plasma etching installation 有权
    等离子刻蚀安装

    公开(公告)号:US06531031B1

    公开(公告)日:2003-03-11

    申请号:US09623734

    申请日:2000-11-22

    CPC classification number: H01J37/321

    Abstract: A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21′). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.

    Abstract translation: 一种用于在反应器中使用高密度等离子体蚀刻衬底的等离子体处理系统。 具有第一线圈端和第二线圈端的ICP线圈,其在反应器中产生作用于反应气体的高频电磁交变场,并且作为电感耦合等离子体源,从反应性粒子和离子产生高密度等离子体。 两个线圈端各自通过馈电点与高频电源进行通信,每种情况都适用于高频电源。 相同频率的电压到第一线圈端和第二线圈端(21,21')。 两个高频a.c. 施加在两个线圈端处的电压通过连接第一馈电点和第二馈电点的lambd2 - 线路连接到对称的电容网络,并且至少几乎相互相反地并且具有至少接近于 相同的幅度。

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