公开(公告)号：US20250132164A1

公开(公告)日：2025-04-24

申请号：US18685668

申请日：2022-08-15

Applicant: Tokyo Electron Limited

Inventor： Koji Kagawa

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/67

Abstract: A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.

公开(公告)号：US20250129482A1

公开(公告)日：2025-04-24

申请号：US18913040

申请日：2024-10-11

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: C23C16/52 ,  C23C16/455

Abstract: A film-forming method for forming a film on a substrate includes: (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging a film-forming gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism; and (B) after (A), adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging an etching gas toward the substrate from the discharge hole of the nozzle gas discharge mechanism.

公开(公告)号：US20250129472A1

公开(公告)日：2025-04-24

申请号：US18907922

申请日：2024-10-07

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: A film-forming method for forming a film on a substrate includes (A) forming the film on the substrate by, in a process chamber, rotating the substrate, moving one of the substrate or a nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism such that a discharge hole of the nozzle gas discharge mechanism passes over a center of the substrate, and discharging a processing gas toward the substrate from the discharge hole; and (B) changing a discharge condition of the processing gas from that in (A), and adjusting a film thickness of the film formed on the substrate by, in the process chamber, rotating the substrate, moving one of the substrate or the nozzle gas discharge mechanism relative to another of the substrate or the nozzle gas discharge mechanism, and discharging the processing gas toward the substrate from the discharge hole.

公开(公告)号：US12284820B2

公开(公告)日：2025-04-22

申请号：US17841225

申请日：2022-06-15

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Niimi ,  Kandabara N Tapily ,  Takahiro Hakamata

IPC: H10D30/62 ,  H01L21/285 ,  H01L21/762 ,  H01L21/768 ,  H10D30/01 ,  H10D84/01 ,  H10D84/03 ,  H10D84/85

Abstract: A semiconductor device includes a first raised feature in a NFET region on a substrate, a first n-type doped epitaxial semiconductor material grown on the first raised feature, the first n-type doped epitaxial material having a first upward facing surface and a first downward facing surface, a first contact metal on the first downward facing surface, and a second contact metal on the first upward facing surface. The device further includes a second raised feature in a PFET region on the substrate, a second p-type doped epitaxial semiconductor material grown on the second raised feature, the second p-type doped epitaxial material having a second upward facing surface and a second downward facing surface, a third contact metal on the second downward facing surface, and a fourth contact metal on the second upward facing surface, wherein the fourth contact metal is different from the second contact metal.

公开(公告)号：US12276033B2

公开(公告)日：2025-04-15

申请号：US17986160

申请日：2022-11-14

Applicant: Tokyo Electron Limited

Inventor： Paul Abel

IPC: C23F1/30

Abstract: The present disclosure provides improved wet etch processes and methods for etching noble metals. More specifically, the present disclosure provides various embodiments of wet etch processes and methods that utilize new etch chemistries for etching noble metals, such as ruthenium (Ru), gold (Au), platinum (Pt) and iridium (Ir), in a wet etch process. In general, the disclosed embodiments expose a noble metal surface to a first etch solution to chemically modify the noble metal surface and form a noble metal salt passivation layer, which can then be selectively dissolved in a second etch solution to etch the noble metal surface.

公开(公告)号：US12272559B2

公开(公告)日：2025-04-08

申请号：US17735800

申请日：2022-05-03

Applicant: Tokyo Electron Limited

Inventor： Akiteru Ko

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3065

Abstract: A method of processing a substrate that includes receiving a patterned photoresist formed over a substrate, the patterned photoresist defining initial openings, each of the initial openings including a first side and an opposite second side along a first direction; depositing a mask material preferentially on the first side within the initial openings using an oblique deposition process performed at a first angle inclined from the first side; and removing a portion of the patterned photoresist using an oblique etch process performed at a second angle inclined from the second side, the mask material and a remaining portion of the patterned photoresist defining final openings.

公开(公告)号：US20250112096A1

公开(公告)日：2025-04-03

申请号：US18981261

申请日：2024-12-13

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki NAKAYAMA

IPC: H01L21/66 ,  H01L21/67

Abstract: Provided is an inspection method for inspecting an inspection object of a first substrate, comprising: (a) preparing the first substrate having a first electrode connected to the inspection object; (b) preparing a second substrate having a second electrode and a bonding portion which are formed on a first main surface, and having a third electrode formed on a second main surface opposite to the first main surface and electrically connected to the second electrode; (c) bringing the first electrode and the second electrode into electrical contact with each other and forming a sealed space between the first substrate and the second substrate by bonding the first substrate and the second substrate with an adhesive interposed therebetween; (d) curing the adhesive; (e) inspecting the inspection object; and (f) separating the first substrate from the second substrate.

公开(公告)号：US20250112031A1

公开(公告)日：2025-04-03

申请号：US18980363

申请日：2024-12-13

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a processing container, a stage, an edge ring, a lifter, and circuitry. The stage has a first mounting surface and a second mounting surface. The edge ring is placed on the second mounting surface. The lifter moves the edge ring with respect to the second mounting surface. Plasma processing of the substrate is performed while the substrate is positioned on the first mounting surface. Further, a first cleaning process is performed in which a first bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface and then a second cleaning process is formed in which a second bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface.

公开(公告)号：US12266514B2

公开(公告)日：2025-04-01

申请号：US17652520

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Rei Ibuka ,  Dai Igarashi ,  Yuki Kato

IPC: H01J37/32 ,  G05B19/401 ,  H01L21/67

Abstract: A placing table includes a placing surface, a flow path formed inside to allow a temperature control medium to flow therein, and a discharge opening through which a heat transfer gas is discharged. A gas supply is configured to supply the heat transfer gas to be discharged through the discharge opening. A measurement unit is configured to measure a temperature of the temperature control medium. A controller is configured to control, when the temperature of the temperature control medium is changed by equal to or more than a predetermined temperature at a change timing, a pressure of the heat transfer gas to eliminate a temperature change of a substrate caused by a temperature change of the temperature control medium after a predetermined time taken before the temperature change of the substrate takes place due to the temperature change of the temperature control medium passes by from the change timing.

公开(公告)号：US12266511B2

公开(公告)日：2025-04-01

申请号：US17104038

申请日：2020-11-25

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu

IPC: H01J37/32

Abstract: Provided is a technique for stably applying a voltage to an edge ring. Provided is a substrate support including: a substrate mounting surface on which a substrate is mounted; an edge ring mounting surface on which an edge ring is mounted around the substrate mounting surface; and a conductive electrode formed on the edge ring mounting surface and configured to apply a voltage to the edge ring.