公开(公告)号：US08093082B2

公开(公告)日：2012-01-10

申请号：US12396750

申请日：2009-03-03

Applicant: Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Chih Peng Hsu ,  Shih Hsiung Chan

Inventor： Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Chih Peng Hsu ,  Shih Hsiung Chan

IPC: H01L21/00

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract translation: 一种制造III族氮化物半导体的光电器件的方法，其中所述方法包括以下步骤：在临时衬底的表面上形成第一III族氮化物半导体层; 使用光刻和蚀刻工艺图案化第一III族氮化物半导体层; 在所述图案化的第一III族氮化物半导体层上形成第二III族氮化物半导体层; 在所述第二III族氮化物半导体层上形成导电层; 并且通过去除第一III族氮化物半导体层来释放临时衬底，以获得第二III族氮化物半导体层和导电层的复合物。

公开(公告)号：US20100261300A1

公开(公告)日：2010-10-14

申请号：US12756191

申请日：2010-04-08

Applicant: PO MIN TU ,  SHIH CHENG HUANG ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PANG MA ,  TZU CHIEN HONG ,  CHIA HUI SHEN

Inventor： PO MIN TU ,  SHIH CHENG HUANG ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PANG MA ,  TZU CHIEN HONG ,  CHIA HUI SHEN

IPC: H01L21/306 ,  H01L21/20 ,  H01L21/28

CPC classification number: H01L33/0079 ,  H01L29/2003

Abstract: A method for separating an epitaxial substrate from a semiconductor layer initially forms a patterned silicon dioxide layer between a substrate and a semiconductor layer, and then separates the substrate from the patterned silicon dioxide layer using two wet etching processes.

Abstract translation: 用于从半导体层分离外延衬底的方法最初在衬底和半导体层之间形成图案化的二氧化硅层，然后使用两个湿法蚀刻工艺将衬底与图案化的二氧化硅层分离。

公开(公告)号：US20100230711A1

公开(公告)日：2010-09-16

申请号：US12722231

申请日：2010-03-11

Applicant: CHESTER KUO ,  LUNG HSIN CHEN ,  WEN LIANG TSENG ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： CHESTER KUO ,  LUNG HSIN CHEN ,  WEN LIANG TSENG ,  SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/00

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/0079 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A method for fabricating flip-chip semiconductor optoelectronic devices initially flip-chip bonds a semiconductor optoelectronic chip attached to an epitaxial substrate to a packaging substrate. The epitaxial substrate is then separated using lift-off technology.

Abstract translation: 用于制造倒装芯片半导体光电器件的方法首先将连接到外延衬底的半导体光电芯片倒装芯片结合到封装衬底。 然后使用剥离技术分离外延衬底。

公开(公告)号：US20100224897A1

公开(公告)日：2010-09-09

申请号：US12716040

申请日：2010-03-02

Applicant: SHIH CHENG HUANG ,  CHIH PANG MA ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  CHIH PANG MA ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/02 ,  H01L21/306

CPC classification number: H01L33/20 ,  H01L33/08

Abstract: A semiconductor optoelectronic device with enhanced light extraction efficiency includes at least one protrusion structure, which can be formed around a light-emitting region of the device. The at least one protrusion structure can include a plurality of protrusion structures in one embodiment. In addition, a fabricating method for forming a semiconductor optoelectronic device with enhanced light extraction efficiency is provided in the present invention.

Abstract translation: 具有增强的光提取效率的半导体光电子器件包括可以围绕器件的发光区域形成的至少一个突起结构。 在一个实施例中，至少一个突起结构可以包括多个突起结构。 此外，在本发明中提供了一种用于形成具有增强的光提取效率的半导体光电子器件的制造方法。

公开(公告)号：US20090321780A1

公开(公告)日：2009-12-31

申请号：US12491806

申请日：2009-06-25

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/14

Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Abstract translation: 描述了具有粗糙表面的氮化镓基发光器件。 发光器件包括衬底，在衬底上生长的缓冲层，在缓冲层上生长的n型III族氮化物半导体层，在n型III族氮化物半导体层上生长的III族氮化物半导体有源层， 在III族氮化物半导体有源层上生长的第一p型III族氮化物半导体层，在第一p型III族氮化物半导体上生长的重掺杂p型III半导体层和粗糙化的第二p型III- 在重掺杂的p型III半导体层上生长的氮化物半导体层。

公开(公告)号：US08217400B2

公开(公告)日：2012-07-10

申请号：US12577350

申请日：2009-10-12

Applicant: Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Shih Hsiung Chan

Inventor： Shih Cheng Huang ,  Po Min Tu ,  Ying Chao Yeh ,  Wen Yu Lin ,  Peng Yi Wu ,  Shih Hsiung Chan

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/08 ,  H01L33/0079

Abstract: A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.

Abstract translation: 在发光器件的表面上形成波长转换层，用于将从发光器件发射的光的一部分变换为不同波长的光。 变换的光与未变换的光混合，因此发光器件可以发射具有优选CIE坐标的光。

公开(公告)号：US20120080715A1

公开(公告)日：2012-04-05

申请号：US13314186

申请日：2011-12-08

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  SHIH HSIUNG CHAN

IPC: H01L33/32

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02656 ,  H01L33/007 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

Abstract: A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Abstract translation: 半导体器件的结构包括第一半导体层; 在所述第一半导体层的表面上的中间层; 在所述中间层上的第二半导体层，其中所述中间层和所述第二半导体层被集成到一组子结构中; 以及在所述第二半导体层上的半导体发光器件。

公开(公告)号：US20090224283A1

公开(公告)日：2009-09-10

申请号：US12396750

申请日：2009-03-03

Applicant: SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

Inventor： SHIH CHENG HUANG ,  PO MIN TU ,  YING CHAO YEH ,  WEN YU LIN ,  PENG YI WU ,  CHIH PENG HSU ,  SHIH HSIUNG CHAN

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract translation: 一种制造III族氮化物半导体的光电器件的方法，其中所述方法包括以下步骤：在临时衬底的表面上形成第一III族氮化物半导体层; 使用光刻和蚀刻工艺图案化第一III族氮化物半导体层; 在所述图案化的第一III族氮化物半导体层上形成第二III族氮化物半导体层; 在所述第二III族氮化物半导体层上形成导电层; 并且通过去除第一III族氮化物半导体层来释放临时衬底，以获得第二III族氮化物半导体层和导电层的复合物。