Abstract:
An optical Mach Zehnder modulator is described. The optical Mach Zehnder modulator may comprise a plurality of segments separated by curved waveguides. For example, an optical Mach Zehnder modulator may comprise a first waveguide arm having a first pn-junction formed therein, a second waveguide arm having a second pn-junction formed therein, a third waveguide arm coupled to the first waveguide arm via a first curved waveguide and a fourth waveguide arm coupled to the second waveguide arm via a second curved waveguide. The segments may have the same polarities. Alternatively, the segments may have opposite polarities. The different segments may be driven using different RF signals. The RF signals may be delayed from one another.
Abstract:
Disclosed herein are methods, structures, and devices for a silicon carrier-depletion based modulator with enhanced doping in at least part of slab regions between waveguide core and contact areas. Compared to prior designs, this modulator exhibits lower optical absorption loss and better modulation bandwidth without sacrificing the modulation efficiency when operating at comparable bandwidth settings.
Abstract:
Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.
Abstract:
Disclosed herein are methods, structures, and devices for a silicon carrier-depletion based modulator with enhanced doping in at least part of slab regions between waveguide core and contact areas. Compared to prior designs, this modulator exhibits lower optical absorption loss and better modulation bandwidth without sacrificing the modulation efficiency when operating at comparable bandwidth settings.
Abstract:
Disclosed herein are methods, structures, apparatus and devices for the termination of unused waveguide ports in planar photonic integrated circuits with doped waveguides such that free-carrier absorption therein may advantageously absorb any undesired optical power resulting in a significant reduction of stray light and resulting reflections.
Abstract:
A photonic integrated circuit (PIC) may be optically aligned to a plurality of optical components (e.g., an optical fiber array). Optical alignment may be facilitated by the use of an optical impedance element coupled between a first input/output (I/O) optical waveguide and a second I/O optical waveguide of the PIC. The optical impedance element me be configured to be transmissive during optical alignment and to be non-transmissive during the regular operation of the PIC.
Abstract:
Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.
Abstract:
Aspects of the present disclosure are directed to a photonic integrated circuit (PIC) having a resistivity-engineered substrate to suppress radio-frequency (RF) common-mode signals. In some embodiments, a semiconductor substrate is provided that comprises two portions having different levels of resistivity to provide both suppression of common mode signals, and reduction of RF absorption loss for non-common mode RF signals. In such embodiments, a bottom portion of the semiconductor substrate has a low resistivity to suppress common mode via RF absorption, while a top portion of the semiconductor substrate that is adjacent to conductors in the IC has a high resistivity to reduce RF loss.
Abstract:
Disclosed herein are methods, structures, apparatus and devices for the termination of unused waveguide ports in planar photonic integrated circuits with doped waveguides such that free-carrier absorption therein may advantageously absorb any undesired optical power resulting in a significant reduction of stray light and resulting reflections.
Abstract:
Integrated wavelength selectors are described. The wavelength selector may include silicon nitride ring resonator disposed vertically between a heater and a temperature sensor. The temperature sensor may be formed of silicon in some embodiments. The wavelength selector may be coupled to the output port of a tunable laser, or may be disposed within a laser cavity.