Silicon modulators and related apparatus and methods

    公开(公告)号:US10133142B2

    公开(公告)日:2018-11-20

    申请号:US15472946

    申请日:2017-03-29

    Abstract: An optical Mach Zehnder modulator is described. The optical Mach Zehnder modulator may comprise a plurality of segments separated by curved waveguides. For example, an optical Mach Zehnder modulator may comprise a first waveguide arm having a first pn-junction formed therein, a second waveguide arm having a second pn-junction formed therein, a third waveguide arm coupled to the first waveguide arm via a first curved waveguide and a fourth waveguide arm coupled to the second waveguide arm via a second curved waveguide. The segments may have the same polarities. Alternatively, the segments may have opposite polarities. The different segments may be driven using different RF signals. The RF signals may be delayed from one another.

    Silicon electro-optical modulator
    23.
    发明授权

    公开(公告)号:US09977269B2

    公开(公告)日:2018-05-22

    申请号:US15584509

    申请日:2017-05-02

    Inventor: Long Chen

    CPC classification number: G02F1/025 G02B6/00 G02B6/134 G02F2001/0156

    Abstract: Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.

    SILICON DEPLETION MODULATORS WITH ENHANCED SLAB DOPING

    公开(公告)号:US20170248806A1

    公开(公告)日:2017-08-31

    申请号:US15455917

    申请日:2017-03-10

    CPC classification number: G02F1/025 G02F2001/0151

    Abstract: Disclosed herein are methods, structures, and devices for a silicon carrier-depletion based modulator with enhanced doping in at least part of slab regions between waveguide core and contact areas. Compared to prior designs, this modulator exhibits lower optical absorption loss and better modulation bandwidth without sacrificing the modulation efficiency when operating at comparable bandwidth settings.

    HORIZONTAL COUPLING TO SILICON WAVEGUIDES
    27.
    发明申请
    HORIZONTAL COUPLING TO SILICON WAVEGUIDES 审中-公开
    水平耦合到硅波形

    公开(公告)号:US20160202421A1

    公开(公告)日:2016-07-14

    申请号:US14991311

    申请日:2016-01-08

    Inventor: Long Chen

    Abstract: Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.

    Abstract translation: 描述了形成包括在硅衬底的沟槽上形成的波导的小面光耦合器的技术。 沟槽形成在硅衬底中,然后用电介质材料填充。 波导在沟槽上的电介质材料上图案化,使得波导与第一表面设置一段距离。 波导的第一端具有第一尺寸,并且第一端的远端的波导的第二端具有与第一尺寸不同的第二尺寸。 波导的材料和第一尺寸限定波导的模式尺寸。

    Integrated wavelength selector
    30.
    发明授权

    公开(公告)号:US11556020B1

    公开(公告)日:2023-01-17

    申请号:US16942668

    申请日:2020-07-29

    Inventor: Long Chen

    Abstract: Integrated wavelength selectors are described. The wavelength selector may include silicon nitride ring resonator disposed vertically between a heater and a temperature sensor. The temperature sensor may be formed of silicon in some embodiments. The wavelength selector may be coupled to the output port of a tunable laser, or may be disposed within a laser cavity.

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