公开(公告)号：US20150339563A1

公开(公告)日：2015-11-26

申请号：US14699417

申请日：2015-04-29

Applicant: Apple Inc.

Inventor： Kwang Soon Park ,  Ming-Chin Hung ,  Chun-Yao Huang ,  Shih Chang Chang ,  Ming-Yuh Hsu

IPC: G06K19/077 ,  G02F1/1335 ,  G06K7/10 ,  G02F1/133

CPC classification number: G06K19/0772 ,  G02F1/13306 ,  G02F1/133512 ,  G02F1/133528 ,  G02F1/1368 ,  G02F2001/133388 ,  G06K7/10198

Abstract: A display may have an active area surrounded by an inactive border area. The display may be a liquid crystal display having a liquid crystal layer sandwiched between a color filter layer and a thin-film transistor layer. An upper polarizer may have a polarized central region that overlaps the active area of the display. The upper polarizer may also have an unpolarized portion in the inactive border area overlapping the border structures. The border structures may include colored material such as a white layer on the inner surface of the thin-film transistor layer. Binary information may be embedded into an array of programmable resonant circuits. The binary information may be a display identifier or other information associated with a display. The programmable resonant circuits may be tank circuits with adjustable capacitors, fuses, or other programmable components.

Abstract translation: 显示器可以具有被非活动边界区域包围的活动区域。 显示器可以是具有夹在滤色器层和薄膜晶体管层之间的液晶层的液晶显示器。 上偏振器可以具有与显示器的有效区域重叠的偏振中心区域。 上偏振器还可以在非边界区域中具有与边界结构重叠的非偏振部分。 边界结构可以在薄膜晶体管层的内表面上包括诸如白色层的着色材料。 二进制信息可嵌入到可编程谐振电路阵列中。 二进制信息可以是与显示器相关联的显示标识符或其他信息。 可编程谐振电路可以是具有可调电容器，保险丝或其他可编程元件的储能电路。

公开(公告)号：US20150323831A1

公开(公告)日：2015-11-12

申请号：US14497252

申请日：2014-09-25

Applicant: Apple Inc.

Inventor： Byung Duk Yang ,  Flora M. Li ,  Kwang Soon Park ,  Ming-Chin Hung ,  Shih-Chang Chang ,  Yong Kwan Kim ,  Young Cheol Chang

IPC: G02F1/1335 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1339

CPC classification number: G02F1/133509 ,  G02F1/133512 ,  G02F1/133516 ,  G02F1/13394 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133519

Abstract: A liquid crystal display may have a thin-film transistor layer with an array of pixel electrode structures for applying electric fields to a liquid crystal layer. The liquid crystal display may also have a color filter layer with an array of color filter elements. The color filter elements may allow the display to display color images. The color filter layer may be interposed between the thin-film transistor layer and a backlight. The liquid crystal layer may be sandwiched between the thin-film transistor layer and the color filter layer. The color filter layer may have a transparent substrate on which the color filter elements are formed. Black masking structures may be formed on a transparent overcoat layer that covers the color filter elements. Black column spacers may be formed from the same layer of material that forms the black masking structures.

Abstract translation: 液晶显示器可以具有薄膜晶体管层，其具有用于向液晶层施加电场的像素电极结构的阵列。 液晶显示器还可以具有带有滤色器元件阵列的滤色器层。 滤色器元件可以允许显示器显示彩色图像。 滤色器层可以介于薄膜晶体管层和背光源之间。 液晶层可以夹在薄膜晶体管层和滤色器层之间。 滤色器层可以具有形成滤色器元件的透明基板。 可以在覆盖滤色器元件的透明外涂层上形成黑色掩蔽结构。 黑色柱状间隔物可以由形成黑色掩蔽结构的相同材料层形成。

公开(公告)号：US08987049B2

公开(公告)日：2015-03-24

申请号：US14474433

申请日：2014-09-02

Applicant: Apple Inc.

Inventor： Ming-Chin Hung ,  Kyung Wook Kim ,  Young Bae Park ,  Hao-Lin Chiu ,  Chun-Yao Huang ,  Shih Chang Chang

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/786 ,  H01L29/7869

Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

Abstract translation: 提供了制造薄膜晶体管（TFT）的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层，以及在半导体层上沉积绝缘体层，以及蚀刻绝缘体层以形成图案化蚀刻停止件，而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括：除了源电极和漏电极之外的半导体层的一部分，使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

公开(公告)号：US20140141565A1

公开(公告)日：2014-05-22

申请号：US13679767

申请日：2012-11-16

Applicant: APPLE INC.

Inventor： Ming-Chin Hung ,  Young Bae Park ,  Chun-Yao Huang ,  Shih Chang Chang ,  John Z. Zhong

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: Embodiments of the present disclosure relate to display devices and methods for manufacturing display devices. Specifically, embodiments of the present disclosure employ an enhanced etching process to create uniformity in the gate insulator of thin-film-transistor (TFTs) by using an active layer to protect the gate insulator from inadvertent etching while patterning an etch stop layer.

Abstract translation: 本公开的实施例涉及用于制造显示设备的显示设备和方法。 具体地，本公开的实施例采用增强的蚀刻工艺，以通过使用有源层来在薄膜晶体管（TFT）的栅极绝缘体中产生均匀性，以保护栅极绝缘体免受无意蚀刻，同时图案化蚀刻停止层。

公开(公告)号：US20140042427A1

公开(公告)日：2014-02-13

申请号：US13629537

申请日：2012-09-27

Applicant: APPLE INC.

Inventor： Ming-Chin Hung ,  Kyung Wook Kim ,  Young Bae Park ,  Hao-Lin Chiu ,  Chun-Yao Huang ,  Shih Chang Chang

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/786 ,  H01L29/7869

Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

Abstract translation: 提供了制造薄膜晶体管（TFT）的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层，以及在半导体层上沉积绝缘体层，以及蚀刻绝缘体层以形成图案化蚀刻停止件，而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括：除了源电极和漏电极之外的半导体层的一部分，使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

公开(公告)号：US20230154931A1

公开(公告)日：2023-05-18

申请号：US18155828

申请日：2023-01-18

Applicant: Apple Inc.

Inventor： Hiroshi Osawa ,  Kyung-Wook Kim ,  Ming-Chin Hung ,  Shih Chang Chang ,  Yu-Cheng Chen

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H10K59/126 ,  H10K59/121

CPC classification number: H01L27/1225 ,  G02F1/13624 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H10K59/126 ,  H10K59/1213 ,  G02F1/13454

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

公开(公告)号：US11177291B2

公开(公告)日：2021-11-16

申请号：US17224305

申请日：2021-04-07

Applicant: Apple Inc.

Inventor： Hiroshi Osawa ,  Kyung-Wook Kim ,  Ming-Chin Hung ,  Shih Chang Chang ,  Yu-Cheng Chen

IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1345 ,  H01L29/786

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

公开(公告)号：US09645464B2

公开(公告)日：2017-05-09

申请号：US14850006

申请日：2015-09-10

Applicant: Apple Inc.

Inventor： Byung Duk Yang ,  Chia Hsuan Tai ,  Hiroshi Osawa ,  Kyung Wook Kim ,  Ming-Chin Hung ,  Shang-Chih Lin ,  Shih Chang Chang ,  Yu Cheng Chen ,  Yuan Chen

IPC: G02F1/1333 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/51 ,  G02B6/00

CPC classification number: G02F1/1368 ,  G02B6/00 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133514 ,  G02F1/133528 ,  G02F1/1362 ,  G02F1/136209 ,  G02F2001/133521 ,  G02F2001/136222 ,  H01L29/518 ,  H01L29/78606

Abstract: A display may have upper and lower display layers. A layer of liquid crystal material may be interposed between the upper and lower display layers. The display layers may have substrates. The display layers may include a color filter layer having an array of color filter elements on a glass substrate and a thin-film transistor layer having a layer of thin-film transistor circuitry on a glass substrate. Dielectric layers within the display layers such as dielectric layers within the thin-film transistor layer may have differing indices of refraction. Reflections and color shifts due to index of refraction discontinuities may be minimized by interposing graded index dielectric layers between adjacent layers with different indices. The graded index layers may be formed from structures with a continuously varying index of refraction or structures with a step-wise varying index of refraction.

公开(公告)号：US09065077B2

公开(公告)日：2015-06-23

申请号：US13913373

申请日：2013-06-07

Applicant: Apple Inc.

Inventor： Ming-Chin Hung ,  Shih Chang Chang ,  Vasudha Gupta ,  Young Bae Park

IPC: H01L51/56 ,  H01L27/32

CPC classification number: H01L51/56 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L2227/323

Abstract: A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer.

Abstract translation: 提供了一种用于制造有机发光二极管（OLED）显示器的方法。 该方法包括形成包括第一金属层和第二金属层的薄膜晶体管（TFT）基板。 该方法还包括在第二金属层上沉积第一钝化层，以及在沟道区域和存储电容器区域上形成第三金属层。 第三金属层被配置为连接到第二金属层的第一部分，其被构造成通过栅极绝缘体和第一钝化层在第一通孔中连接到第一金属层。 该方法还包括在第三金属层上沉积第二钝化层，以及在第二钝化层上形成阳极层。 阳极被配置为连接到第三金属层的第二部分，其被配置为在第一钝化层和第二钝化层的第二通孔中连接到第二金属层。

公开(公告)号：US20150055051A1

公开(公告)日：2015-02-26

申请号：US14249716

申请日：2014-04-10

Applicant: Apple Inc.

Inventor： Hiroshi Osawa ,  Kyung-Wook Kim ,  Ming-Chin Hung ,  Shih Chang Chang ,  Yu-Cheng Chen

IPC: H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1362

CPC classification number: H01L27/1225 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/7869

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

Abstract translation: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中，可以形成包括半导体氧化物薄膜晶体管，硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中，显示驱动器电路可以包括硅薄膜晶体管电路，显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。