Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency

    公开(公告)号:US11183411B2

    公开(公告)日:2021-11-23

    申请号:US17157428

    申请日:2021-01-25

    Abstract: A method includes aligning and positioning a carrier in a predetermined orientation and location within a first front opening pod (FOUP) of a cluster tool, transferring the carrier to a charging station of the cluster tool, transferring a substrate from a second front opening pod (FOUP) of the cluster tool to the charging station and chucking the substrate onto the carrier, transferring the carrier having the substrate thereon from the charging station to a factory interface of the cluster tool, aligning the carrier having the substrate thereon in the factory interface of the cluster tool such that during substrate processing within a processing platform of the cluster tool the carrier is properly oriented and positioned relative to components of the processing platform, where the processing platform comprises one or more processing chambers, transferring the aligned carrier having the substrate thereon from the factory interface to the processing platform of the cluster tool for substrate processing, and transferring the aligned carrier having the processed substrate thereon from the processing platform to the factory interface.

    ACTIVELY-COOLED SHADOW RING FOR HEAT DISSIPATION IN PLASMA CHAMBER
    25.
    发明申请
    ACTIVELY-COOLED SHADOW RING FOR HEAT DISSIPATION IN PLASMA CHAMBER 审中-公开
    用于等离子体室内散热的活塞式冷却环

    公开(公告)号:US20150170955A1

    公开(公告)日:2015-06-18

    申请号:US14109808

    申请日:2013-12-17

    Abstract: Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a shadow ring assembly for a plasma processing chamber includes a shadow ring having an annular body and an inner opening. The shadow ring assembly further includes a cooling channel disposed in the annular body for cooling fluid transport. The cooling channel is coupled to a pair of supply/return openings at a surface of the annular body.

    Abstract translation: 对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。 在一个示例中,用于等离子体处理室的阴影环组件包括具有环形体和内部开口的阴影环。 阴影环组件还包括设置在环形体中用于冷却流体输送的冷却通道。 冷却通道联接到环形体的表面处的一对供应/返回开口。

    Thermal reactor with improved gas flow distribution
    27.
    发明授权
    Thermal reactor with improved gas flow distribution 有权
    具有改善气流分布的热反应器

    公开(公告)号:US08888916B2

    公开(公告)日:2014-11-18

    申请号:US14088013

    申请日:2013-11-22

    CPC classification number: H01L21/67115 F27D7/06 H01L21/67017 H01L21/67098

    Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.

    Abstract translation: 本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。 本发明的一个实施例提供了一种用于处理衬底的装置,其包括限定处理体积的室主体,设置在处理容积中的衬底支撑件,其中衬底支撑件构造成支撑和旋转衬底;气体入口组件, 室主体的入口并且被配置为向处理容积提供第一气流,以及联接到室主体的出口的排气组件,其中气体入口组件和排气组件设置在室主体的相对侧上 ,并且排气组件限定了被配置为延长处理量的排气量。

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