公开(公告)号：US11643724B2

公开(公告)日：2023-05-09

申请号：US16930211

申请日：2020-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/40 ,  C23C16/48

CPC classification number: C23C16/45536 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/486 ,  H05H3/02

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US20230040728A1

公开(公告)日：2023-02-09

申请号：US17969227

申请日：2022-10-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: H01L21/033 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  C23C16/00 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US11482418B2

公开(公告)日：2022-10-25

申请号：US15925532

申请日：2018-03-19

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Toshihisa Nozawa ,  Ryu Nakano

IPC: C23C16/455 ,  H01L21/033 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  C23C16/00 ,  H01L21/02 ,  H01L21/311

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

公开(公告)号：US20210166940A1

公开(公告)日：2021-06-03

申请号：US17103938

申请日：2020-11-24

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/683 ,  H01L23/00 ,  H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/458

Abstract: Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.