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21.发明授权公开(公告)号：US09280057B2
公开(公告)日：2016-03-08
申请号：US14725023
申请日：2015-05-29
Applicant: ASML Netherlands B.V.
Inventor： Franciscus Godefridus Casper Bijnen , David Deckers , Sami Musa
CPC classification number: G03F7/70141 , G01B9/02 , G01B11/272 , G01D5/344 , G03F9/7046 , G03F9/7088
Abstract: An alignment measurement system measures an alignment target on an object. A measurement illuminates the target and is reflected. The reflected measurement beam is split and its parts are differently polarized. A detector receives the reflected measurement beam. A processing unit determines alignment on the basis of the measurement beam received by the detector. An alternative arrangement utilizes an optical dispersive fiber to guide a multi-wavelength measurement beam reflected from the object to a detector.
Abstract translation: 对准测量系统测量物体上的对准目标。 测量照亮目标并被反射。 反射的测量光束被分离，其部分被不同的极化。 检测器接收反射的测量光束。 处理单元基于由检测器接收的测量波束来确定对准。 一种替代方案是使用光学色散光纤将从物体反射的多波长测量光束引导到检测器。
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公开(公告)号：US11874103B2
公开(公告)日：2024-01-16
申请号：US17412525
申请日：2021-08-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Junichi Kanehara , Stefan Carolus Jacobus Antonius Keij , Thomas Augustus Mattaar , Petrus Franciscus Van Gils
IPC: G01B11/27
CPC classification number: G01B11/272
Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.
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公开(公告)号：US11531280B2
公开(公告)日：2022-12-20
申请号：US17271684
申请日：2019-08-22
Applicant: ASML Holding N.V. , ASML Netherlands B.V.
Inventor： Tamer Mohamed Tawfik Ahmed Mohamed Elazhary , Justin Lloyd Kreuzer , Franciscus Godefridus Casper Bijnen , Krishanu Shome
Abstract: An apparatus and system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to a compact integrated optical device to create self images of the alignment mark which may be manipulated (e.g., mirrored, polarized) and combined to obtain information on the position of the mark and distortions within the mark. Also disclosed is a system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to an optical fiber arrangement to obtain information such as the position of the mark and distortions within the mark.
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24.发明授权公开(公告)号：US11442372B2
公开(公告)日：2022-09-13
申请号：US17442951
申请日：2020-02-25
Applicant: ASML Netherlands B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Ralph Brinkhof
IPC: G03F9/00
Abstract: The invention provides a method of measuring an alignment mark or an alignment mark assembly, wherein the alignment mark comprises grid features extending in at least two directions, the method comprising: measuring the alignment mark or alignment mark assembly using an expected location of the alignment mark or alignment mark assembly, determining a first position of the alignment mark or alignment mark assembly in a first direction, determining a second position of the alignment mark or alignment mark assembly in a second direction, wherein the second direction is perpendicular to the first direction, determining a second direction scan offset between the expected location of the alignment mark or alignment mark assembly in the second direction and the determined second position, and correcting the first position on the basis of the second direction scan offset using at least one correction data set to provide a first corrected position.
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公开(公告)号：US11079684B2
公开(公告)日：2021-08-03
申请号：US16229009
申请日：2018-12-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Robert John Socha , Youping Zhang
Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.
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Patent Agency Ranking
公开(公告)号：US10527958B2
公开(公告)日：2020-01-07
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Edo Maria Hulsebos , Henricus Johannes Lambertus Megens , Sudharshanan Raghunathan , Boris Menchtchikov , Ahmet Koray Erdamar , Loek Johannes Petrus Verhees , Willem Seine Christian Roelofs , Wendy Johanna Martina Van De Ven , Hadi Yagubizade , Hakki Ergün Cekli , Ralph Brinkhof , Tran Thanh Thuy Vu , Maikel Robert Goosen , Maaike Van't Westeinde , Weitian Kou , Manouk Rijpstra , Matthijs Cox , Franciscus Godefridus Casper Bijnen
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US10527957B2
公开(公告)日：2020-01-07
申请号：US15778517
申请日：2016-10-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Cayetano Sanchez-Fabres Cobaleda , Franciscus Godefridus Casper Bijnen , Edo Maria Hulsebos , Arie Jeffrey Den Boef , Marcel Hendrikus Maria Beems , Piotr Michał Stolarz
Abstract: A lithographic apparatus has a substrate table on which a substrate is positioned, and an alignment sensor used to measure the alignment of the substrate. In an exemplary processing method, the alignment sensor is used to perform one or more edge measurements in a first step. In a second step, one or more edge measurements are performed on the notch of the substrate. The edge measurements are then used to align the substrate in the lithographic apparatus. In a particular example, the substrate is arranged relative to the alignment sensor such that a portion of the edge surface is positioned at the focal length of the lens. When the alignment sensor detects radiation scattered by the edge surface at the focal length of the lens, the presence of the edge of the substrate is detected.
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公开(公告)号：US10139740B2
公开(公告)日：2018-11-27
申请号：US15742028
申请日：2016-07-07
Applicant: ASML NETHERLANDS B.V.
Abstract: A lithographic apparatus is described, the apparatus comprising: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the apparatus further comprises an alignment system configured to perform, for one or more alignment marks that are present on the substrate: —a plurality of alignment mark position measurements for the alignment mark by applying a respective plurality of different alignment measurement parameters, thereby obtaining a plurality of measured alignment mark positions for the alignment mark; the apparatus further comprising a processing unit, the processing unit being configured to: —determine, for each of the plurality of alignment mark position measurements, a positional deviation as a difference between an expected alignment mark position and a measured alignment mark position, the measured alignment mark position being determined based on the respective alignment mark position measurement; —define a set of functions as possible causes for the positional deviations, the set of functions including a substrate deformation function representing a deformation of the substrate, and at least one mark deformation function representing a deformation of the one or more alignment marks; —generating a matrix equation PD=M*F whereby a vector PD comprising the positional deviations is set equal to a weighted combination, represented by a weight coefficient matrix M, of a vector F comprising the substrate deformation function and the at least one mark deformation function, whereby weight coefficients associated with the at least one mark deformation function vary depending on applied alignment measurement; —determining a value for the weight coefficients of the matrix M; —determining an inverse or pseudo-inverse matrix of the matrix M, thereby obtaining a value for the substrate deformation function as a weighted combination of the positional deviations. —applying the value of the substrate deformation function to perform an alignment of the target portion with the patterned radiation beam.
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29.发明授权公开(公告)号：US09835954B2
公开(公告)日：2017-12-05
申请号：US14892880
申请日：2014-05-02
Applicant: ASML Netherlands B.V.
Inventor： Erik Willem Bogaart , Franciscus Godefridus Casper Bijnen , Arie Jeffrey Den Boef , Simon Gijsbert Josephus Mathijssen
IPC: G03F7/00 , G01N21/95 , G03F7/20 , G01N21/956 , G01N21/65
CPC classification number: G03F7/70483 , G01N21/9501 , G01N21/956 , G01N2021/656 , G03F7/70625
Abstract: A substrate is provided with device structures and metrology structures (800). The device structures include materials exhibiting inelastic scattering of excitation radiation of one or more wavelengths. The device structures include structures small enough in one or more dimensions that the characteristics of the inelastic scattering are influenced significantly by quantum confinement. The metrology structures (800) include device-like structures (800b) similar in composition and dimensions to the device features, and calibration structures (800a). The calibration structures are similar to the device features in composition but different in at least one dimension. Using an inspection apparatus and method implementing Raman spectroscopy, the dimensions of the device-like structures can be measured by comparing spectral features of radiation scattered inelastically from the device-like structure and the calibration structure.
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30.发明授权公开(公告)号：US09726991B2
公开(公告)日：2017-08-08
申请号：US14764522
申请日：2014-03-06
Applicant: ASML Netherlands B.V.
Inventor： Johannes Jacobus Matheus Baselmans , Franciscus Godefridus Casper Bijnen , Daniëlle Elisabeth Maria Palmen
CPC classification number: G03F9/708 , G03F1/42 , G03F1/44 , G03F7/70058
Abstract: A patterning device, for use in forming a marker on a substrate by optical projection, the patterning device including a marker pattern having a density profile that is periodic with a fundamental spatial frequency corresponding to a desired periodicity of the marker to be formed. The density profile is modulated (such as sinusoidally) so as to suppress one or more harmonics of the fundamental frequency, relative to a simple binary profile having the fundamental frequency.
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