公开(公告)号：US10007744B2

公开(公告)日：2018-06-26

申请号：US14941347

申请日：2015-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Guangqing Chen ,  Shufeng Bai ,  Eric Richard Kent ,  Yen-Wen Lu ,  Paul Anthony Tuffy ,  Jen-Shiang Wang ,  Youping Zhang ,  Gertjan Zwartjes ,  Jan Wouter Bijlsma

IPC: G06F17/50 ,  G03F7/00 ,  G03F7/20 ,  G06F17/12 ,  G06F17/14

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/12 ,  G06F17/14 ,  G06F2217/12 ,  G06F2217/14

Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.

公开(公告)号：US20160146740A1

公开(公告)日：2016-05-26

申请号：US14945257

申请日：2015-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Yen-Wen Lu ,  Jay Jianhui Chen ,  Wei Liu ,  Boris Menchtchikov ,  Jen-Shiang Wang ,  Te-Chih Huang

IPC: G01N21/88 ,  G01N21/95 ,  G01B11/27

CPC classification number: G01N21/8806 ,  G01B11/272 ,  G01N21/9501 ,  G01N2021/8822 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683

Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

Abstract translation: 一种确定第一结构和第二结构之间的覆盖误差的方法，其中所述第一结构和第二结构位于衬底上的不同层上，并通过光刻工艺成像到所述衬底上，所述方法包括：获得明显的重叠误差 ; 获得由除了第一和第二结构的未对准之外的因素引起的系统误差; 并通过从明显重叠错误中移除系统误差来确定覆盖误差。 该方法可以替代地包括通过第一和第二结构的重叠部分获得衍射衍射级数的明显特征; 获得衍射级的校正特性; 从校正的特征确定覆盖误差; 以及基于重叠误差来调整光刻处理的特性。

公开(公告)号：US20150185626A1

公开(公告)日：2015-07-02

申请号：US14578036

申请日：2014-12-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Guangqing CHEN ,  Jen-Shiang Wang ,  Shufeng Bai

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: A system to, and a method to, select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of points for each proposed target, eliminating each target having a catastrophic error at any of the plurality of points, performing a metrology simulation to determine a parameter over the process window for each target not having a catastrophic error at any of the plurality of points, and using the one or more resulting determined simulated parameters to evaluate target quality.

Abstract translation: 一种用于选择在基板上使用的测量目标的系统和方法，包括对于每个所提出的目标执行对于处理窗口区域上的多个点的光刻模拟，识别多个点中的任一点的灾难性误差 每个所提出的目标，消除每个目标在多个点中的任一点具有灾难性错误，执行度量仿真以确定在多个点中的任一点上没有灾难性错误的每个目标的处理窗口上的参数，并且使用 一个或多个产生的确定的模拟参数来评估目标质量。