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公开(公告)号：US20240036484A1
公开(公告)日：2024-02-01
申请号：US18265606
申请日：2021-12-02
Applicant: ASML Netherlands B.V.
Inventor： Timothy Dugan DAVIS , Simon Gijsbert Josephus MATHIJSSEN , Kaustuve BHATTACHARYYA , Sebastianus Adrianus GOORDEN , Armand Eugene Albert KOOLEN , Sera JEON , Shuo-Chun LIN
CPC classification number: G03F9/7019 , G03F9/7092 , G03F7/70633 , G03F7/70641
Abstract: Disclosed is a method of metrology. The method comprises measuring at least one surrounding observable parameter relating to a surrounding signal contribution to a metrology signal which comprises a contribution to said metrology signal which is not attributable to at least one target being measured and determining a correction from said surrounding signal observable parameter. The correction is used to correct first measurement data relating to measurement of one or more targets using measurement radiation forming a measurement spot on one or more of said one or more targets which is larger than one of said targets.
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22.发明公开公开(公告)号：US20240036480A1
公开(公告)日：2024-02-01
申请号：US18258521
申请日：2021-12-09
Applicant: ASML Netherlands B.V.
Inventor： Armand Eugene Albert KOOLEN , Simon Gijsbert Josephus MATHIJSSEN , Hui Quan LIM , Amanda Elizabeth ANDERSON
CPC classification number: G03F7/70683 , G03F7/70633 , G03F9/7088 , G03F9/7076
Abstract: Disclosed is a method of measuring a target on a substrate comprising: illuminating a target with measurement radiation comprising at least a first wavelength, collecting the resultant scattered radiation within a collection numerical aperture; and determining a parameter of interest from said scattered radiation. The target comprises a mediator periodic structure and at least a first target periodic structure each in a respective different layer on the substrate, wherein a pitch of at least the mediator periodic structure is below a single diffraction limit defined by the collection numerical aperture and a wavelength of said measurement radiation, such that said scattered radiation comprises double diffracted radiation, said double diffracted radiation comprising radiation having undergone two sequential same-order diffractions of opposite sign.
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公开(公告)号：US20240012339A1
公开(公告)日：2024-01-11
申请号：US18255310
申请日：2021-12-08
Applicant: ASML Netherlands B.V.
IPC: G03F7/00
CPC classification number: G03F7/70625 , G03F7/70633 , G03F7/70683
Abstract: Disclosed is method of determining at least one homogeneity metric describing homogeneity of an etched trench on a substrate formed by a lithographic manufacturing process. The method comprises obtaining one or more images of the etched trench, wherein each of said one or more images comprises a spatial representation of one or more parameters of scattered radiation as detected by a detector or camera following scattering and/or diffraction from the etched trench; and measuring homogeneity along the length of the etched trench on said one or more images to determine said at least one homogeneity metric.
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公开(公告)号：US20220276569A1
公开(公告)日：2022-09-01
申请号：US17629053
申请日：2020-07-17
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Keng-Fu CHANG , Simon Gijsbert Josephus MATHIJSSEN
IPC: G03F7/20
Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.
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公开(公告)号：US20190086824A1
公开(公告)日：2019-03-21
申请号：US16085000
申请日：2017-02-14
Applicant: ASML NETHERLANDS B.V.
IPC: G03F9/00
Abstract: A method of determining positions of marks, the marks comprising periodic structures, at least some of the structures comprising periodic sub-structures, the sub-structures having a smaller period than the structures, the marks formed with positional offsets between the sub-structures and structures, the positional offsets caused by a combination of both known and unknown components, the method comprising illuminating a plurality of the marks with radiation having different characteristics, detecting radiation diffracted by the marks using one or more detectors which produce output signals, discriminating between constituent parts of the signals, the discriminating based on a variation of the signals as a function of spatial positions of the marks on a substrate, selecting at least one of the constituent parts of the signals, and using the at least one selected constituent part, and information relating to differences between the known components, to calculate a corrected position of at least one mark.
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Patent Agency Ranking
26.发明申请公开(公告)号：US20180136568A1
公开(公告)日：2018-05-17
申请号：US15788258
申请日：2017-10-19
Applicant: ASML Netherlands B.V.
Inventor： Sander Bas ROOBOL , Simon Gijsbert Josephus MATHIJSSEN
Abstract: Disclosed is an illumination source apparatus comprising a high harmonic generation medium, a pump radiation source and a spatial filter. The pump radiation source emits a beam of pump radiation having a profile comprising no pump radiation in a central region of the beam and excites the high harmonic generation medium so as to generate high harmonic radiation. The pump radiation and the generated high harmonic radiation are spatially separated beyond the focal plane of the beam of pump radiation The spatial filter is located beyond a focal plane of the beam of pump radiation, and blocks the pump radiation. Also disclosed is a method of generating high harmonic measurement radiation optimized for filtration of pump radiation therefrom.
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公开(公告)号：US20160077445A1
公开(公告)日：2016-03-17
申请号：US14787451
申请日：2014-04-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Arie Jeffrey DEN BOEF , Simon Gijsbert Josephus MATHIJSSEN , Patricius Aloysius Jacobus TINNEMANS
CPC classification number: G03F7/70141 , G01B11/272 , G03F9/7069 , G03F9/7088 , G03F9/7092
Abstract: An alignment sensor including an illumination source, such as a white light source, having an illumination grating operable to diffract higher order radiation at an angle dependent on wavelength; and illumination optics to deliver the diffracted radiation onto an alignment grating from at least two opposite directions. For every component wavelength incident on the alignment grating, and for each direction, the zeroth diffraction order of radiation incident from one of the two opposite directions overlaps a higher diffraction order of radiation incident from the other direction. This optically amplifies the higher diffraction orders with the overlapping zeroth orders.
Abstract translation: 一种对准传感器，包括诸如白光源的照明源，具有可操作以以取决于波长的角度衍射高阶辐射的照明光栅; 和照明光学器件，以将衍射辐射从至少两个相反的方向传送到对准光栅上。 对于入射在对准光栅上的每个分量波长，并且对于每个方向，从两个相反方向之一入射的辐射的零级衍射级与从另一方向入射的较高的辐射衍射级重叠。 这种光学放大了具有重叠零级的较高的衍射级。
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公开(公告)号：US20250004385A1
公开(公告)日：2025-01-02
申请号：US18684048
申请日：2022-09-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Marc Johannes NOOT , Simon Gijsbert Josephus MATHIJSSEN , Scott Anderson MIDDLEBROOKS , Kaustuve BHATTACHARYYA
Abstract: A method to determine a metrology contribution from statistically independent sources, the method including providing a plurality of contributions from statistically independent sources obtained at a plurality of measurement settings, and determining a metrology contribution from the contributions wherein the metrology contribution is the contribution having least dependence as a function of the measurement settings.
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29.发明申请公开(公告)号：US20200348605A1
公开(公告)日：2020-11-05
申请号：US16931002
申请日：2020-07-16
Applicant: ASML Netherlands B.V.
Inventor： Simon Gijsbert Josephus MATHIJSSEN , Stefan HUNSCHE , Markus Gerardus Martinus Maria VAN KRAAIJ
Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.
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30.发明申请公开(公告)号：US20180267411A1
公开(公告)日：2018-09-20
申请号：US15903392
申请日：2018-02-23
Applicant: ASML Netherlands B.V.
Inventor： Sudhir SRIVASTAVA , Sander Bas ROOBOL , Simon Gijsbert Josephus MATHIJSSEN , Nan LIN , Sjoerd Nicolaas Lambertus DONDERS , Krijn Frederik BUSTRAAN , Petrus Wilhelmus SMORENBURG , Gerrit Jacobus Hendrik BRUSSAARD
IPC: G03F7/20
Abstract: Disclosed is gas delivery system which is suitable for a high harmonic generation (HHG) radiation source which may be used to generate measurement radiation for an inspection apparatus. In such a radiation source, a gas delivery element delivers gas in a first direction. The gas delivery element has an optical input and an optical input, defining an optical path running in a second direction. The first direction is arranged relative to the second direction at an angle that is not perpendicular or parallel. Also disclosed is a gas delivery element having a gas jet shaping device, or a pair of gas delivery elements, one of which delivers a second gas, such that the gas jet shaping device or second gas is operable to modify a flow profile of the gas such that the number density of the gas falls sharply.
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