Metrology method and device for determining a complex-valued field

    公开(公告)号:US12117734B2

    公开(公告)日:2024-10-15

    申请号:US17638975

    申请日:2020-07-31

    CPC classification number: G03F7/70633 G01N21/4738

    Abstract: Disclosed is a method of measuring a structure, and associated metrology device and computer program. The method comprises obtaining an amplitude profile of scattered radiation relating to a measurement of a first structure on a first substrate and obtaining a reference phase profile relating to a reference measurement of at least one reference structure on a reference substrate. The at least one reference structure is not the same structure as said first structure but is nominally identical in terms of at least a plurality of key parameters. The method further comprises determining a complex-valued field to describe the first structure from the amplitude profile and reference phase profile.

    Metrology device and detection apparatus therefor

    公开(公告)号:US11782351B2

    公开(公告)日:2023-10-10

    申请号:US17636830

    申请日:2020-07-15

    Inventor: Nitesh Pandey

    CPC classification number: G03F7/7085 G03F7/70275 G03F7/70625 G03F7/70641

    Abstract: Disclosed is a detection apparatus for a metrology device operable to measure a parameter of interest from scattered radiation having been scattered from a sample. The detection device comprises a detector comprising an array of pixels. The array of pixels comprises imaging pixels for detecting an image from which the parameter of interest is determined, and direction detecting pixels for detecting the angle of incidence of said scattered radiation on said detector.

    Metrology apparatus
    24.
    发明授权

    公开(公告)号:US11549806B2

    公开(公告)日:2023-01-10

    申请号:US17141698

    申请日:2021-01-05

    Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the apparatus comprising: a radiation source configured to generate illumination radiation; at least two illumination branches comprising at least one optical fiber and configured to illuminate a structure on a substrate from different angles; and a radiation switch configured to receive the illumination radiation and transfer at least part of the radiation to a selectable one of the at least two illumination branches.

    Metrology apparatus and method for determining a characteristic of one or more structures on a substrate

    公开(公告)号:US11454887B2

    公开(公告)日:2022-09-27

    申请号:US16556709

    申请日:2019-08-30

    Inventor: Nitesh Pandey

    Abstract: Disclosed is a method and associated inspection apparatus for measuring a characteristic of interest relating to a structure on a substrate. The inspection apparatus uses measurement radiation comprising a plurality of wavelengths. The method comprises performing a plurality of measurement acquisitions of said structure, each measurement acquisition being performed using measurement radiation comprising a different subset of the plurality of wavelengths, to obtain a plurality of multiplexed measurement signals. The plurality of multiplexed measurement signals are subsequently de-multiplexed into signal components according to each of said plurality of wavelengths, to obtain a plurality of de-multiplexed measurement signals which are separated according to wavelength.

    Metrology apparatus
    27.
    发明授权

    公开(公告)号:US10895452B2

    公开(公告)日:2021-01-19

    申请号:US16558457

    申请日:2019-09-03

    Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the apparatus comprising: a radiation source for generating illumination radiation; at least two illumination branches for illuminating the structure on the substrate, the illumination branches being configured to illuminate the structure from different angles; and a radiation switch configured to receive the illumination radiation and transfer at least part of the radiation to a selectable one of the at least two illumination branches.

    Method of measuring, device manufacturing method, metrology apparatus, and lithographic system

    公开(公告)号:US10656534B2

    公开(公告)日:2020-05-19

    申请号:US16428215

    申请日:2019-05-31

    Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.

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