公开(公告)号：US20170293233A1

公开(公告)日：2017-10-12

申请号：US15477602

申请日：2017-04-03

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Richard Johannes Franciscus VAN HAREN ,  Everhardus Cornelis MOS ,  Youping ZHANG

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/28

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70683 ,  H01L22/00 ,  H01L22/12 ,  H01L23/544

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.

公开(公告)号：US20160349627A1

公开(公告)日：2016-12-01

申请号：US15117409

申请日：2015-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF ,  Omer Abubaker Omer ADAM ,  Te-Chih HUANG ,  Youping ZHANG

IPC: G03F7/20 ,  G01N21/88 ,  G01N21/47

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G01N21/8806 ,  G01N2201/12 ,  G03F7/70683

Abstract: There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.

Abstract translation: 公开了一种测量涉及光刻的制造工艺的工艺参数的方法。 在公开的布置中，该方法包括对基板上的区域中的覆盖误差执行第一和第二测量，并且基于重叠误差的第一和第二测量值获得处理参数的度量。 重叠误差的第一次测量被设计为对过程参数中的扰动比已知量的覆盖误差的第二次测量更敏感。

公开(公告)号：US20160140267A1

公开(公告)日：2016-05-19

申请号：US14941347

申请日：2015-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Guangqing CHEN ,  Shufeng BAI ,  Eric Richard KENT ,  Yen-Wen LU ,  Paul Anthony TUFFY ,  Jen-Shiang WANG ,  Youping ZHANG ,  Gertjan ZWARTJES ,  Jan Wouter BIJLSMA

IPC: G06F17/50 ,  G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70633 ,  G03F7/70683 ,  G06F17/12 ,  G06F17/14

Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.

Abstract translation: 用于自动生成稳健计量目标的方法和系统，可以适应各种光刻过程和过程扰动。 整个光刻过程的各个步骤被建模成单个过程序列以模拟物理衬底处理。 该过程顺序驱动了整体的三维设备几何的创建，而不是逐个“构建”设备几何。