-
公开(公告)号：US20070139987A1
公开(公告)日：2007-06-21
申请号：US11565792
申请日：2006-12-01
IPC分类号： G11C19/08
CPC分类号： G11C13/0011 , G11C2213/11 , G11C2213/15 , G11C2213/34 , G11C2213/52 , G11C2213/56 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A storage element and storage apparatus are provided. A storage element includes a storage layer disposed between two electrodes, and an ion source layer provided in contact with the storage layer and containing any element selected from the group consisting of Cu, Ag, and Zn, wherein the material of the electrode on the storage layer side, of the two electrodes, is composed of an amorphous tungsten alloy containing at least one element selected from the group consisting of Zr, Nb, Mo, and Ta, or an amorphous tantalum nitride. The storage element is capable of stably performing an information recording operation.
摘要翻译： 提供存储元件和存储装置。 存储元件包括设置在两个电极之间的存储层和设置成与存储层接触并且包含选自Cu，Ag和Zn中的任何元素的离子源层，其中存储器中的电极的材料 这两个电极的层侧由包含选自Zr，Nb，Mo和Ta中的至少一种元素的无定形钨合金或非晶态氮化钽组成。 存储元件能够稳定地执行信息记录操作。
-
公开(公告)号：US20060104106A1
公开(公告)日：2006-05-18
申请号：US11280561
申请日：2005-11-15
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C2213/11 , G11C2213/15 , G11C2213/34 , G11C2213/56 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： A memory element is provided in which recording and erasure of information can be performed easily and stably. A memory element 10 includes a memory layer 4 positioned between a first electrode 2 and a second electrode 6, in which an element selected from Cu, Ag, and Zn is contained in the memory layer 4 or in a layer 3 in contact with the memory layer 4, a resistance of the memory element 10 is changed by a voltage applied to the memory element 10 to perform recording of information, and in an erasing process of changing from a recorded state of low resistance value of the memory element 10 to an erased state of high resistance value of the memory element 10, a fluctuation, which is caused by an increase of the voltage applied to the memory element 10, of the resistance value of the memory element 10 at the end of the erasing process is within ten times at a maximum.
摘要翻译： 提供了一种存储元件，其中可以容易且稳定地执行信息的记录和擦除。 存储元件10包括位于第一电极2和第二电极6之间的存储层4，其中选自Cu，Ag和Zn的元素包含在存储层4中或与存储器接触的层3中 层4，存储元件10的电阻被施加到存储元件10的电压改变以进行信息的记录，并且在从存储元件10的低电阻值的记录状态改变为擦除的擦除处理 存储元件10的高电阻值的状态，由擦除处理结束时的存储元件10的电阻值的升高引起的由存储元件10施加的电压引起的波动为十倍以内 最大。
-
公开(公告)号：US20050226062A1
公开(公告)日：2005-10-13
申请号：US10514009
申请日：2004-03-18
IPC分类号： H01L45/00 , G11C11/063
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory element in which recording and reading-out of information can easily be performed and which can be manufactured easily using a comparatively simple manufacturing method and a storage device using the memory element are provided. A memory element 10 includes an amorphous thin-film 4 that is in between a first electrode 2 and a second electrode 5, in which at least one electrode in the first electrode 2 and the second electrode 5 contains Ag or Cu and the amorphous thin-film 4 is composed of Ge, and at least one element selected from S, Se, Te and Sb. Also a storage device includes the memory element 10, a wiring connected to the side of the first electrode 2 and a wiring connected to the side of the second electrode 5, in which a memory element 10 is arranged in large numbers.
摘要翻译： 提供了一种存储元件，其中可以容易地执行信息的记录和读取，并且可以使用相对简单的制造方法和使用存储元件的存储装置容易地制造信息。 存储元件10包括在第一电极2和第二电极5之间的非晶薄膜4，其中第一电极2和第二电极5中的至少一个电极包含Ag或Cu，并且非晶薄膜4， 膜4由Ge和选自S，Se，Te和Sb中的至少一种元素组成。 存储装置还包括存储元件10，连接到第一电极2侧的布线和连接到第二电极5侧的布线，其中存储元件10大量布置。
-
24.发明申请Manufacturing process of original disc for producing optical disc and production process of optical disc 失效用于生产光盘的原盘的制造过程和光盘的生产过程公开(公告)号：US20050161842A1
公开(公告)日：2005-07-28
申请号：US10505455
申请日：2003-12-24
CPC分类号： G11B7/261 , Y10S425/81
摘要： The method of the present invention includes: an exposing process in which an inorganic resist layer 101 formed on a substrate 100 is irradiated with recording laser light modulated by an information signal corresponding to an information signal of an information concave and convex pattern formed on an optical disc to form an exposed pattern corresponding to the information concave and convex pattern on the optical disc, and after the above process a development process in which development processing is performed on the inorganic resist layer to form a concave and convex pattern corresponding to the information concave and convex pattern of the inorganic resist layer; in the above exposing process, after a trial exposure is performed on a non-recording area of the above resist layer, the exposed portion is irradiated with evaluation laser light and a recording signal characteristic of the above resist layer is evaluated from the reflected light to determine based on the evaluation result an optimum focus position of recording laser light which is later performed; and accordingly the recording signal characteristic (jitter value) of the optical disc is predicted and evaluated in the exposing process from the recording characteristic of the exposed portion on the resist to appropriately adjust an exposure focusing position based on the evaluation result and thus, a master having an appropriate concave and convex pattern and consequently an optical disc having an excellent characteristic can be manufactured.
摘要翻译： 本发明的方法包括：曝光处理，其中形成在基板100上的无机抗蚀剂层101被记录激光照射，该记录激光由对应于在光学上形成的信息凹凸图案的信息信号的信息信号调制 形成对应于光盘上的信息凹凸图案的曝光图案，在上述处理之后，对无机抗蚀剂层进行显影处理以形成对应于信息凹部的凹凸图案的显影处理 和无机抗蚀剂层的凸起图案; 在上述曝光处理中，在对上述抗蚀剂层的非记录区域进行试验曝光之后，用评价激光照射曝光部分，并将上述抗蚀剂层的记录信号从反射光评估为 基于评价结果确定记录稍后进行的激光的最佳聚焦位置; 因此根据曝光部分的抗蚀剂的记录特性，在曝光处理中预测和评估光盘的记录信号特性（抖动值），以根据评估结果适当地调整曝光聚焦位置，因此，主 具有适当的凹凸图案，因此可以制造具有优异特性的光盘。
-
公开(公告)号：US08295074B2
公开(公告)日：2012-10-23
申请号：US12742538
申请日：2008-11-27
CPC分类号： G11C13/0004 , G11C13/00 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The storage element 10 has a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor 30, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element 10.
摘要翻译： 提供了一种存储单元，其中电阻值被适当地控制，由此可以向可变电阻元件施加将元件改变为高电阻或低电阻状态所需的电压。 存储元件10，非线性电阻元件20和MOS晶体管30串联电连接。 存储元件10具有与MOS晶体管30的非线性电流 - 电压特性相反的非线性电流 - 电压特性，并且根据施加电压的极性而变为高电阻或低电阻状态。 非线性电阻元件20具有类似于存储元件10的非线性电流 - 电压特性的非线性电流 - 电压特性。
-
26.发明授权公开(公告)号：US08097189B2
公开(公告)日：2012-01-17
申请号：US12635314
申请日：2009-12-10
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern using a light source with an irradiation power that is less than an irradiation threshold power at which exposure of the resist starts; and developing the resist layer to form the predetermined irregular pattern.
摘要翻译： 一种使用现有曝光系统制造光盘母盘的方法，以及一种制造具有较高记录容量的光盘的方法。 制造光盘的方法，使用母盘来制造其上具有不规则图案的光盘，通过以下步骤制造母版：通过形成由包括过渡金属的不完全氧化物如W的抗蚀剂材料构成的抗蚀剂层 或Mo，不完全氧化物的氧含量小于对应于过渡金属的化合价的化学计量组成的氧含量; 使用具有小于抗蚀剂开始曝光的照射阈值功率的照射功率的光源根据记录信号图案选择性地曝光抗蚀剂层; 并显影抗蚀剂层以形成预定的不规则图案。
-
公开(公告)号：US20110073825A1
公开(公告)日：2011-03-31
申请号：US12961088
申请日：2010-12-06
IPC分类号： H01L45/00
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 having an arrangement in which a memory thin film is sandwiched between first and second electrodes, the memory thin film contains at least rare earth elements, the memory thin film 4 or a layer in contact with the memory thin film contains any one of elements selected from Cu, Ag, Zn and the memory thin film or the layer in contact with the memory thin film contains any one of elements selected from Te, S, Se.
摘要翻译： 具有这样一种结构的存储器件10，其中存储薄膜夹在第一和第二电极之间，存储薄膜至少含有稀土元素，存储薄膜4或与存储薄膜接触的层包含任何一种 选自Cu，Ag，Zn和记忆薄膜的元素或与记忆薄膜接触的层包含选自Te，S，Se中的任何一种元素。
-
公开(公告)号：US20100135060A1
公开(公告)日：2010-06-03
申请号：US12703247
申请日：2010-02-10
CPC分类号： G11C13/0011 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/33 , G11C2213/34 , G11C2213/56 , G11C2213/72 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.
摘要翻译： 记忆装置10具有这样的结构，其中存储薄膜4夹在第一和第二电极2和6之间，记忆薄膜6至少含有稀土元素，记忆薄膜4或与 记忆薄膜4包含选自Cu，Ag，Zn和记忆薄膜4中的任一种元素，或者与存储薄膜4接触的层3包含选自Te，S，Se中的任何一种元素。 存储装置可以容易地稳定地记录和读取信息，并且可以通过相对简单的制造方法容易地制造该存储装置。
-
29.发明授权Method of producing optical disk-use original and method of producing optical disk 有权制造光盘使用原理的方法和制造光盘的方法公开(公告)号：US07670514B2
公开(公告)日：2010-03-02
申请号：US10498044
申请日：2003-09-25
CPC分类号： G11B7/261 , Y10S425/81 , Y10T428/24802
摘要： A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern; and developing the resist layer to form the predetermined irregular pattern.
摘要翻译： 一种使用现有曝光系统制造光盘母盘的方法，以及一种制造具有较高记录容量的光盘的方法。 制造光盘的方法，使用母盘来制造其上具有不规则图案的光盘，通过以下步骤制造母版：通过形成由包括过渡金属的不完全氧化物如W的抗蚀剂材料构成的抗蚀剂层 或Mo，不完全氧化物的氧含量小于对应于过渡金属的化合价的化学计量组成的氧含量; 根据记录信号图案用激光选择性地曝光抗蚀剂层; 并显影抗蚀剂层以形成预定的不规则图案。
-
公开(公告)号：US07560220B2
公开(公告)日：2009-07-14
申请号：US12077119
申请日：2008-03-17
CPC分类号： B82Y10/00 , G03F7/0043 , G11B7/261
摘要： A resist material and a nanofabrication method provide high-resolution nanofabrication without an expensive irradiation apparatus using, for example, electron beams or ion beams. That is, the resist material and the nanofabrication method provide finer processing using exposure apparatuses currently in use. A resist layer of an incompletely oxidized transition metal such as W and Mo is selectively exposed and developed to be patterned in a predetermined form. The incompletely oxidized transition metal herein is a compound having an oxygen content slightly deviated to a lower content from the stoichiometric oxygen content corresponding to a possible valence of the transition metal. In other words, the compound has an oxygen content lower than the stoichiometric oxygen content corresponding to a possible valence of the transition metal.
摘要翻译： 抗蚀剂材料和纳米制造方法提供高分辨率纳米制造，而不需要使用例如电子束或离子束的昂贵的照射装置。 也就是说，抗蚀剂材料和纳米制造方法使用目前使用的曝光设备提供更精细的处理。 不完全氧化的过渡金属如W和Mo的抗蚀剂层被选择性地暴露和显影以以预定形式图案化。 本文中不完全氧化的过渡金属是具有相对于过渡金属的可能化合价的化学计量氧含量稍微偏离到较低含量的氧含量的化合物。 换句话说，化合物的氧含量低于对应于过渡金属的可能化合价的化学计量的氧含量。
-
-
-
-
-
-
-
-
-
搜索结果
88 条记录 (耗时 0.028 秒)
