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公开(公告)号：US08295074B2
公开(公告)日：2012-10-23
申请号：US12742538
申请日：2008-11-27
CPC分类号： G11C13/0004 , G11C13/00 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The storage element 10 has a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor 30, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element 10.
摘要翻译： 提供了一种存储单元，其中电阻值被适当地控制，由此可以向可变电阻元件施加将元件改变为高电阻或低电阻状态所需的电压。 存储元件10，非线性电阻元件20和MOS晶体管30串联电连接。 存储元件10具有与MOS晶体管30的非线性电流 - 电压特性相反的非线性电流 - 电压特性，并且根据施加电压的极性而变为高电阻或低电阻状态。 非线性电阻元件20具有类似于存储元件10的非线性电流 - 电压特性的非线性电流 - 电压特性。
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公开(公告)号：US20100259967A1
公开(公告)日：2010-10-14
申请号：US12742538
申请日：2008-11-27
CPC分类号： G11C13/0004 , G11C13/00 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The storage element 10 has a nonlinear current-voltage characteristic opposite to a nonlinear current-voltage characteristic of the MOS transistor 30, and changes into a high or low resistance state in accordance with a polarity of applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic similar to the nonlinear current-voltage characteristic of the storage element 10.
摘要翻译： 提供了一种存储单元，其中电阻值被适当地控制，由此可以向可变电阻元件施加将元件改变为高电阻或低电阻状态所需的电压。 存储元件10，非线性电阻元件20和MOS晶体管30串联电连接。 存储元件10具有与MOS晶体管30的非线性电流 - 电压特性相反的非线性电流 - 电压特性，并且根据施加电压的极性而变为高电阻或低电阻状态。 非线性电阻元件20具有类似于存储元件10的非线性电流 - 电压特性的非线性电流 - 电压特性。
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3.发明授权公开(公告)号：US08427860B2
公开(公告)日：2013-04-23
申请号：US13018744
申请日：2011-02-01
申请人： Kazuhiro Ohba , Shuichiro Yasuda , Tetsuya Mizuguchi , Katsuhisa Aratani , Masayuki Shimuta , Akira Kouchiyama , Mayumi Ogasawara
发明人： Kazuhiro Ohba , Shuichiro Yasuda , Tetsuya Mizuguchi , Katsuhisa Aratani , Masayuki Shimuta , Akira Kouchiyama , Mayumi Ogasawara
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , G11C11/16 , G11C11/161 , G11C13/0011 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/146 , H01L45/1633
摘要： A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
摘要翻译： 存储器组件包括：第一电极; 记忆层; 和第二电极，其中所述存储层包括含有铝（Al）和至少一种选自碲（Te），硫（S）和硒的硫属元素的离子源层 （Se），以及设置在所述离子源层与所述第一电极之间并且含有氧化铝和电阻低于所述氧化铝的过渡金属氧化物和过渡金属氧氮化物中的至少一种的电阻变化层。
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公开(公告)号：US09112149B2
公开(公告)日：2015-08-18
申请号：US13310830
申请日：2011-12-05
申请人： Hiroaki Sei , Shuichiro Yasuda , Masayuki Shimuta , Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi , Kazuhiro Ohba
发明人： Hiroaki Sei , Shuichiro Yasuda , Masayuki Shimuta , Katsuhisa Aratani , Akira Kouchiyama , Tetsuya Mizuguchi , Kazuhiro Ohba
CPC分类号： H01L45/14 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/1625 , H01L45/1641
摘要： A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode.
摘要翻译： 提供了由存储器层的劣化引起的存储器特性降低降低的存储元件，制造存储元件的方法和存储器件。 存储元件依次包括第一电极，存储层和第二电极。 存储层包括含有氟化物的电阻变化层和设置在电阻变化层和第二电极之间的离子源层。
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5.发明申请公开(公告)号：US20110194329A1
公开(公告)日：2011-08-11
申请号：US13018744
申请日：2011-02-01
申请人： Kazuhiro Ohba , Shuichiro Yasuda , Tetsuya Mizuguchi , Katsuhisa Aratani , Masayuki Shimuta , Akira Kouchiyama , Mayumi Ogasawara
发明人： Kazuhiro Ohba , Shuichiro Yasuda , Tetsuya Mizuguchi , Katsuhisa Aratani , Masayuki Shimuta , Akira Kouchiyama , Mayumi Ogasawara
CPC分类号： H01L45/145 , G11C11/16 , G11C11/161 , G11C13/0011 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/146 , H01L45/1633
摘要： A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
摘要翻译： 存储器组件包括：第一电极; 记忆层; 和第二电极，其中所述存储层包括含有铝（Al）和至少一种选自碲（Te），硫（S）和硒的硫属元素的离子源层 （Se），以及设置在所述离子源层与所述第一电极之间并且含有氧化铝和电阻低于所述氧化铝的过渡金属氧化物和过渡金属氧氮化物中的至少一种的电阻变化层。
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公开(公告)号：US08912516B2
公开(公告)日：2014-12-16
申请号：US13527779
申请日：2012-06-20
CPC分类号： H01L45/085 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/55 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/16 , H01L45/1608
摘要： A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.
摘要翻译： 一种存储元件，包括：第一电极，存储层和第二电极。 存储层包括含有氧化物的电阻变化层和设置在第一电极侧的电阻变化层，以及设置在单位离子源层中的两个以上的层叠结构的离子源层，单位离子源层 包括第一层和第二层，第一层含有一种或多种碲（Te），硫（S）和硒（Se）的硫族元素元素，以及容易移动的元素，其易于在 存储层，并且具有易于移动的元件从第一电极到第二电极的密度分布，并且第二层包含难以在存储层中移动的难移动元件。
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公开(公告)号：US08885385B2
公开(公告)日：2014-11-11
申请号：US13487165
申请日：2012-06-02
CPC分类号： H01L45/1266 , G11C11/5614 , G11C13/0011 , G11C2213/56 , H01L27/2436 , H01L27/2472 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1641
摘要： A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer.
摘要翻译： 存储元件包括：设置在第一电极和第二电极之间的存储层。 存储层包括：含有一种或多种金属元素的离子源层和碲（Te），硫（S）和硒（Se）的一种或多种硫属元素; 以及设置在所述离子源层和所述第一电极之间的电阻变化层，所述电阻变化层包括包含碲和氮（N）并与所述离子源层接触的层。
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公开(公告)号：US08796657B2
公开(公告)日：2014-08-05
申请号：US13370428
申请日：2012-02-10
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C2213/55 , G11C2213/56 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145
摘要： There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm.
摘要翻译： 提供了在低电压和电流操作期间具有改进的重复特性的存储元件和存储器件。 存储元件依次包括第一电极，存储层和第二电极。 存储层包括设置在第一电极侧的电阻变化层和设置在第二电极侧的离子源层，电阻率为2.8mΩ-OHgr·cm以上但小于1Ω·cm·cm。
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公开(公告)号：US20130001497A1
公开(公告)日：2013-01-03
申请号：US13527779
申请日：2012-06-20
CPC分类号： H01L45/085 , G11C13/0007 , G11C2213/11 , G11C2213/15 , G11C2213/55 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/16 , H01L45/1608
摘要： A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.
摘要翻译： 一种存储元件，包括：第一电极，存储层和第二电极。 存储层包括含有氧化物的电阻变化层和设置在第一电极侧的电阻变化层，以及设置在单位离子源层中的两个以上的层叠结构的离子源层，单位离子源层 包括第一层和第二层，第一层含有一种或多种碲（Te），硫（S）和硒（Se）的硫族元素元素，以及容易移动的元素，其易于在 存储层，并且具有易于移动的元件从第一电极到第二电极的密度分布，并且第二层包含难以在存储层中移动的难移动元件。
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公开(公告)号：US20130001496A1
公开(公告)日：2013-01-03
申请号：US13527764
申请日：2012-06-20
CPC分类号： G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.
摘要翻译： 存储元件依次包括：第一电极，存储层和第二电极。 存储层包括设置在第一电极侧的电阻变化层和包含一种或多种金属元素的离子源层，并且离子源层设置在第二电极侧。 离子源层包括第一离子源层和第二离子源层，第一离子源层包含碲（Te），硫（S）和硒（Se）的硫属元素中的一种或多种，并且被提供在 电阻变化层侧，第二离子源层含有与第一离子源层的含量不同的硫族元素，并设置在第二电极侧。
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