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公开(公告)号：US06756243B2
公开(公告)日：2004-06-29
申请号：US10020551
申请日：2001-10-30
IPC分类号： H01L2166
CPC分类号： H01L22/20 , H01L2223/54453 , Y10T29/41
摘要： A method and an apparatus for performing cascade control of processing of semiconductor wafers. A first semiconductor wafer for processing is received. A second semiconductor wafer for processing is received. A cascade processing operation upon the first and the second semiconductor wafers is performed, wherein the cascade processing operation comprises acquiring pre-process metrology data related to the second semiconductor wafer during at least a portion of a time period wherein the first semiconductor wafer is being processed.
摘要翻译： 一种用于对半导体晶片的处理进行级联控制的方法和装置。 接收用于处理的第一半导体晶片。 接收用于处理的第二半导体晶片。 执行在第一和第二半导体晶片上的级联处理操作，其中级联处理操作包括在其中正在处理第一半导体晶片的时间段的至少一部分期间获取与第二半导体晶片相关的预处理测量数据 。
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22.发明授权Dynamic process state adjustment of a processing tool to reduce non-uniformity 有权动态过程状态调整的加工工具减少不均匀性公开(公告)号：US06751518B1
公开(公告)日：2004-06-15
申请号：US10134244
申请日：2002-04-29
IPC分类号： G06F1900
CPC分类号： H01L21/67276
摘要： A method and an apparatus for reducing process non-uniformity across a processed semiconductor wafers. A first semiconductor wafer is processed. A process non-uniformity associated with the first processed semiconductor wafer is identified. A feedback correction in response to the process non-uniformity during processing of a second semiconductor wafer is performed and/or a feed-forward compensation is performed in response to the process non-uniformity during a subsequent process performed across the first semiconductor wafer is performed.
摘要翻译： 一种用于减少经处理的半导体晶片的工艺不均匀性的方法和装置。 处理第一半导体晶片。 识别与第一处理的半导体晶片相关联的工艺不均匀。 执行响应于处理第二半导体晶片期间的处理不均匀性的反馈校正和/或响应于在第一半导体晶片执行的后续处理期间的处理不均匀性执行前馈补偿 。
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公开(公告)号：US08615314B1
公开(公告)日：2013-12-24
申请号：US10932989
申请日：2004-09-02
IPC分类号： G05B13/02
CPC分类号： G05B19/41875 , G05B2219/32182 , G05B2219/45031 , Y02P90/22
摘要： A method, apparatus and a system, for performing a process control using analysis of an upstream process is provided. The method comprises performing a first process on a workpiece and performing a qualitative analysis upon the workpiece relating to the first process, the qualitative analysis comprises analyzing at least one metrology measurement relating to the first process and a workpiece feature to evaluate a characteristic of the workpiece. The method further comprises selecting a process control parameter for performing a second process upon the workpiece based upon the qualitative analysis.
摘要翻译： 提供了一种使用上游处理的分析进行处理控制的方法，装置和系统。 该方法包括对工件执行第一过程并对与第一过程相关的工件执行定性分析，定性分析包括分析与第一过程有关的至少一个度量测量和工件特征以评估工件的特性 。 该方法还包括基于定性分析来选择用于对工件执行第二处理的过程控制参数。
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公开(公告)号：US07424392B1
公开(公告)日：2008-09-09
申请号：US10323502
申请日：2002-12-18
CPC分类号： G05B19/41875 , G05B2219/32135 , G05B2219/32182 , G05B2219/32184 , G05B2219/37224 , G05B2219/41146 , G05B2219/41147 , G05B2219/50065 , Y02P90/22
摘要： A method and an apparatus are provided for applying a self-adaptive filter to a drifting process. The method includes processing a workpiece, measuring an output characteristic of the processed workpiece and modifying a previous estimated process state based at least on the measured output characteristic. The method further includes estimating a next process state based at least on the modified previous estimated process state.
摘要翻译： 提供了一种用于将自适应滤波器应用于漂移过程的方法和装置。 该方法包括处理工件，测量被处理工件的输出特性，以及至少基于所测量的输出特性修改先前的估计过程状态。 该方法还包括至少基于修改的先前估计的处理状态来估计下一处理状态。
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25.发明授权公开(公告)号：US06968252B1
公开(公告)日：2005-11-22
申请号：US10619850
申请日：2003-07-14
IPC分类号： G01N21/88 , G05B19/418 , G06F19/00
CPC分类号： G05B19/41865 , Y02P90/12 , Y02P90/18 , Y02P90/20
摘要： A method for dispatching based on metrology tool performance includes determining a precision metric associated with each of a plurality of metrology tools. A metrology request including context information is generated. A precision requirement for the metrology request is identified based on the context information. A set of the metrology tools capable of satisfying the metrology request is identified based on the precision requirement and the precision metrics. A manufacturing system includes a manufacturing execution system server and a metrology monitor. The manufacturing execution system server is configured to generate a metrology request including context information. The metrology monitor is configured to determine a precision metric associated with each of a plurality of metrology tools, identify a precision requirement for the metrology request based on the context information, and identify a set of the metrology tools capable of satisfying the metrology request based on the precision requirement and the precision metrics.
摘要翻译： 基于计量工具性能的调度方法包括确定与多个计量工具中的每一个相关联的精度度量。 生成包含上下文信息的度量请求。 基于上下文信息确定计量要求的精度要求。 基于精度要求和精度指标，确定了能够满足计量要求的一套计量工具。 制造系统包括制造执行系统服务器和计量监视器。 制造执行系统服务器被配置为生成包括上下文信息的度量请求。 计量监视器被配置为确定与多个计量工具中的每一个相关联的精度度量，基于上下文信息来识别对度量请求的精度要求，并且基于基于上下文信息识别能够满足度量请求的一组度量工具，其基于 精度要求和精度指标。
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公开(公告)号：US06757579B1
公开(公告)日：2004-06-29
申请号：US10209758
申请日：2002-07-31
申请人： Alexander J. Pasadyn
发明人： Alexander J. Pasadyn
IPC分类号： G05B1302
CPC分类号： G05B13/04 , G05B23/0254
摘要： A method for monitoring a manufacturing system includes defining a plurality of observed states associated with the manufacturing system. State estimates are generated for the observed states. An uncertainty value is generated for each of the state estimates. Measurement data associated with an entity in the manufacturing system is received. The state estimates are updated based on the measurement data and the uncertainty values associated with the state estimates. A system for monitoring a manufacturing system includes a controller configured to define a plurality of observed states associated with the manufacturing system, generate state estimates for the observed states, generate an uncertainty value for each of the state estimates, receive measurement data associated with an entity in the manufacturing system, and update the state estimates based on the measurement data and the uncertainty values associated with the state estimates.
摘要翻译： 用于监测制造系统的方法包括限定与制造系统相关联的多个观察状态。 对观察到的状态产生状态估计。 为每个状态估计生成不确定性值。 接收与制造系统中的实体相关联的测量数据。 基于与状态估计相关联的测量数据和不确定性值来更新状态估计。 用于监测制造系统的系统包括：控制器，被配置为定义与制造系统相关联的多个观察状态，生成观察状态的状态估计，为每个状态估计生成不确定性值，接收与实体相关联的测量数据 并且基于与状态估计相关联的测量数据和不确定性值来更新状态估计。
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27.发明授权Method and apparatus for combining integrated and offline metrology for process control 有权用于组合和离线计量的过程控制的方法和装置公开(公告)号：US06645780B1
公开(公告)日：2003-11-11
申请号：US10022321
申请日：2001-12-13
IPC分类号： H01L2166
CPC分类号： H01L22/26
摘要： A method and an apparatus for combining integrated and offline metrology data for process control. A process operation on a first semiconductor wafer within a first lot of semiconductor wafers is performed. Integrated metrology data from the first semiconductor wafer is acquired, the integrated metrology data comprising inline metrology data. A dynamic time process control based upon the integrated metrology data is performed, the dynamic time process control comprising a wafer-to-wafer feedback loop. A second semiconductor wafer within the first lot is processed based upon the dynamic time process. Offline metrology data from at least one of the first semiconductor wafer and the second semiconductor wafer from the lot is acquired. A constant time process control based upon the offline metrology data and the integrated metrology data is performed, the constant time comprising performing a lot-to-lot feedback process.
摘要翻译： 一种用于结合集成和离线量测数据进行过程控制的方法和装置。 执行在第一批半导体晶片内的第一半导体晶片上的处理操作。 采集来自第一半导体晶片的集成测量数据，该集成测量数据包括内联计量数据。 执行基于集成测量数据的动态时间过程控制，动态时间过程控制包括晶片到晶片反馈回路。 基于动态时间过程来处理第一批次内的第二半导体晶片。 获取来自批次的第一半导体晶片和第二半导体晶片中的至少一个的脱离测量数据。 执行基于离线量度数据和集成度量数据的恒定时间过程控制，该恒定时间包括进行批次间反馈处理。
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28.发明授权Method of selectively processing wafer edge regions to increase wafer uniformity, and system for accomplishing same 有权选择性地处理晶片边缘区域以增加晶片均匀性的方法，以及用于实现晶片边缘区域的系统公开(公告)号：US06589875B1
公开(公告)日：2003-07-08
申请号：US09920997
申请日：2001-08-02
IPC分类号： H01L21311
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/32115 , H01L21/32139 , Y10S438/974
摘要： In one illustrative embodiment, the method includes providing a wafer including at least one non-production area, forming a process layer above the wafer, forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and performing a process operation on the exposed portion of the process layer formed above the at least one non-production area. In another aspect, the present invention is directed to a system that includes a controller for identifying at least one non-production area of a wafer, a photolithography tool for forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and an etch tool for performing an etching process on the exposed portion of the process layer formed above the at least one non-production area.
摘要翻译： 在一个说明性实施例中，该方法包括提供包括至少一个非生产区域的晶片，在晶片上形成工艺层，在工艺层上方形成掩模层，掩模层被图案化，以暴露部分 处理层，形成在至少一个非生产区域上方，并且对形成在至少一个非生产区域上方的处理层的暴露部分进行处理操作。 在另一方面，本发明涉及一种系统，其包括用于识别晶片的至少一个非生产区域的控制器，用于在工艺层上方形成掩模层的光刻工具，所述掩模层被图案化，以便 暴露形成在所述至少一个非生产区域之上的所述工艺层的一部分，以及蚀刻工具，用于对形成在所述至少一个非生产区域上方的所述工艺层的所述暴露部分进行蚀刻工艺。
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公开(公告)号：US06442496B1
公开(公告)日：2002-08-27
申请号：US09633930
申请日：2000-08-08
IPC分类号： H01L2100
CPC分类号： H01L21/67276 , H01L22/20
摘要： The present invention provides for a method and an apparatus for performing dynamic sampling of a production line. A first plurality of semiconductor wafers are processed. A minimum sampling rate of semiconductor wafers is calculated. Wafers from the first plurality of the semiconductor wafers are selected and analyzed at the calculated sampling rate. The performance of the processing of the first plurality of semiconductor wafers is quantified, based upon the analyzed wafers. A dynamic sampling process is performed based upon the quantification of the performance of the processing of semiconductor wafers.
摘要翻译： 本发明提供一种用于进行生产线的动态取样的方法和装置。 处理第一多个半导体晶片。 计算半导体晶片的最小采样率。 以所计算的采样率选择和分析来自第一多个半导体晶片的晶片。 基于分析的晶片来量化第一多个半导体晶片的处理性能。 基于对半导体晶片的处理的性能的量化来执行动态采样处理。
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公开(公告)号：US08359494B2
公开(公告)日：2013-01-22
申请号：US10323272
申请日：2002-12-18
申请人： Elfido Coss, Jr. , Ernest D. Adams, III , Robert J. Chong , Howard E. Castle , Thomas J. Sonderman , Alexander J. Pasadyn
发明人： Elfido Coss, Jr. , Ernest D. Adams, III , Robert J. Chong , Howard E. Castle , Thomas J. Sonderman , Alexander J. Pasadyn
IPC分类号： G06F11/00
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and an apparatus are provided for parallel fault detection. The method comprises receiving data associated with processing of a workpiece by a first processing tool, receiving data associated with processing of a workpiece by a second processing tool and comparing at least a portion of the received data to a common fault model to determine if a fault associated with at least one of the processing of the workpiece by the first processing tool and processing of the workpiece by the second processing tool occurred.
摘要翻译： 提供了用于并行故障检测的方法和装置。 该方法包括接收与第一处理工具处理工件有关的数据，通过第二处理工具接收与工件的处理有关的数据，并将至少一部分接收到的数据与常见故障模型进行比较，以确定是否存在故障 与通过第一处理工具处理工件和由第二处理工具处理工件的至少一个相关联。
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