公开(公告)号：US20200381248A1

公开(公告)日：2020-12-03

申请号：US16817007

申请日：2020-03-12

申请人： Applied Materials, Inc.

发明人： Yong SUN ,  Praket Prakash JHA ,  Jingmei LIANG ,  Martin Jay SEAMONS ,  DongQing LI ,  Shashank SHARMA ,  Abhilash J. MAYUR ,  Wolfgang R. ADERHOLD

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/30

摘要： A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.

公开(公告)号：US20180099353A1

公开(公告)日：2018-04-12

申请号：US15838010

申请日：2017-12-11

申请人： Applied Materials, Inc.

发明人： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph M. RANISH

IPC分类号： B23K26/06 ,  H01L21/324 ,  H01L21/268 ,  B23K26/073 ,  B23K26/00 ,  H01L21/20

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20150357215A1

公开(公告)日：2015-12-10

申请号：US14832564

申请日：2015-08-21

申请人： Applied Materials, Inc.

发明人： STEPHEN MOFFATT ,  Abhilash J. MAYUR ,  Sundar RAMAMURTHY ,  Joseph M. RANISH ,  Aaron Muir HUNTER

IPC分类号： H01L21/67 ,  B23K26/06 ,  B23K26/08 ,  B23K26/00

CPC分类号： H01L21/67115 ,  B23K26/0639 ,  B23K26/064 ,  B23K26/08 ,  B23K26/127 ,  F27B17/0025 ,  H01L21/67248

摘要： A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.

摘要翻译： 提供了一种处理基板的方法和装置。 衬底位于热处理室中的支撑件上。 电磁辐射被引向衬底以退火衬底的一部分。 其他电磁辐射被引向衬底以预热衬底的一部分。 预热减少了预热区域和退火区域之间的边界处的热应力。 根据具体实施方案的需要，预期任何数量的退火和预热区域具有变化的形状和温度曲线。 可以使用任何方便的电磁辐射源，例如激光器，加热灯，白光灯或闪光灯。

公开(公告)号：US20140233929A1

公开(公告)日：2014-08-21

申请号：US14264828

申请日：2014-04-29

申请人： Applied Materials, Inc.

发明人： Blake KOELMEL ,  Joseph M. RANISH ,  Abhilash J. MAYUR

IPC分类号： F27D5/00

CPC分类号： H01L21/67346 ,  F27D5/0037 ,  F27D11/12 ,  F27D2005/0081 ,  H01L21/67115 ,  H01L21/68735

摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.

摘要翻译： 本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。