公开(公告)号：US20220037120A1

公开(公告)日：2022-02-03

申请号：US17315259

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Jonathan KOLBECK ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20200234921A1

公开(公告)日：2020-07-23

申请号：US16748847

申请日：2020-01-22

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Evgeny KAMENETSKIY ,  James ROGERS ,  Olivier LUERE ,  Rajinder DHINDSA ,  Viacheslav PLOTNIKOV

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20200154556A1

公开(公告)日：2020-05-14

申请号：US16738697

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Olivier LUERE ,  Rajinder DHINDSA ,  James ROGERS ,  Sunil SRINIVASAN ,  Anurag Kumar MISHRA

IPC: H05H1/46 ,  C23C14/54 ,  C23C14/34 ,  H01J37/34 ,  H01J37/08 ,  H01J37/32

Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20180218933A1

公开(公告)日：2018-08-02

申请号：US15421726

申请日：2017-02-01

Applicant: Applied Materials, Inc.

Inventor： Olivier LUERE ,  Leonid DORF ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  James ROGERS ,  Denis M. KOOSAU

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.

公开(公告)号：US20180166249A1

公开(公告)日：2018-06-14

申请号：US15834939

申请日：2017-12-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid DORF ,  Travis KOH ,  Olivier LUERE ,  Olivier JOUBERT ,  Philip A. KRAUS ,  Rajinder DHINDSA ,  JAMES HUGH ROGERS

IPC: H01J37/08 ,  H01J37/248

CPC classification number: H01J37/08 ,  H01J37/248

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.