公开(公告)号：US08393289B2

公开(公告)日：2013-03-12

申请号：US12231078

申请日：2008-08-29

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： B05C5/02

CPC分类号： B82Y30/00 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/02675 ,  H01L21/288 ,  H01L21/76838 ,  Y10S977/70 ,  Y10S977/712 ,  Y10S977/773 ,  Y10S977/786

摘要： An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.

公开(公告)号：US20120292640A1

公开(公告)日：2012-11-22

申请号：US13370906

申请日：2012-02-10

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： H01L31/12 ,  H01L33/34 ,  H01L33/02

CPC分类号： H01L33/005 ,  H01L21/8213 ,  H01L21/8252 ,  H01L31/0312 ,  H01L31/03125 ,  H01L33/343

摘要： A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device. In another embodiment, the solid state energy conversion device operates as a photovoltaic device.

摘要翻译： 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 在一个实施例中，固态能量转换装置用作发光装置。 在另一个实施例中，固态能量转换装置作为光伏器件工作。

公开(公告)号：US08080836B2

公开(公告)日：2011-12-20

申请号：US11825809

申请日：2007-07-09

申请人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

发明人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

IPC分类号： H01L21/02

CPC分类号： H01L21/02376 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02636

摘要： A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

摘要翻译： 公开了一种用于原位制造嵌入衬底中的半导体组件的工艺。 用第一激光束烧蚀衬底以在其中形成空隙。 第一导电元件用第二激光束形成在衬底的空隙中。 在存在沉积气氛的情况下，第三激光束在第一导电元件上沉积半导体材料。 第二导电元件用第四激光束形成在第一半导体材料上。 该工艺可用于制造肖特基势垒二极管或结型场效应晶体管等。

公开(公告)号：US07603883B2

公开(公告)日：2009-10-20

申请号：US11821640

申请日：2007-06-25

申请人： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

发明人： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

IPC分类号： B21B45/00

CPC分类号： B21C37/042 ,  B21C1/003 ,  B21C1/02 ,  B21C1/12 ,  B21C37/047 ,  Y10S72/70

摘要： An apparatus and method is disclosed for drawing continuous metallic wire having a first diameter to a metallic fiber having a reduced second diameter. A feed mechanism moves the wire at a first linear velocity. A laser beam heats a region of the wire to an elevated temperature. A draw mechanism draws the heated wire at a second and greater linear velocity for providing a drawn metallic fiber having the reduced second diameter.

摘要翻译： 公开了一种用于将具有第一直径的连续金属丝拉制成具有减小的第二直径的金属纤维的装置和方法。 进给机构以第一线速度移动线。 激光束将导线的区域加热到升高的温度。 牵引机构以第二和更大的线速度牵引加热的线，以提供具有减小的第二直径的拉伸金属纤维。

公开(公告)号：US07419887B1

公开(公告)日：2008-09-02

申请号：US11189266

申请日：2005-07-26

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： B82Y30/00 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/02592 ,  H01L21/02628 ,  H01L21/02675 ,  H01L21/288 ,  H01L21/76838 ,  Y10S977/70 ,  Y10S977/712 ,  Y10S977/773 ,  Y10S977/786

摘要： An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.

摘要翻译： 公开了一种在具有纳米颗粒的衬底上形成纳米结构的装置和方法。 将纳米颗粒通过纳米尺寸的孔沉积到基底上。 将激光束引导通过聚光器将纳米尺寸激光束聚焦到基底上沉积的纳米颗粒上。 该装置和方法适用于通过材料的直接纳米尺度沉积在纳米尺度线宽度的半导体晶片上制造图案化的导体，半导体和绝缘体。

公开(公告)号：US07237422B2

公开(公告)日：2007-07-03

申请号：US11264877

申请日：2005-11-01

申请人： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

发明人： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

IPC分类号： B21D37/16

CPC分类号： B21C37/042 ,  B21C1/003 ,  B21C1/02 ,  B21C1/12 ,  B21C37/047 ,  Y10S72/70

摘要： An apparatus and method is disclosed for drawing continuous metallic wire having a first diameter to a metallic fiber having a reduced second diameter. A feed mechanism moves the wire at a first linear velocity. A laser beam heats a region of the wire to an elevated temperature. A draw mechanism draws the heated wire at a second and greater linear velocity for providing a drawn metallic fiber having the reduced second diameter.

摘要翻译： 公开了一种用于将具有第一直径的连续金属丝拉制成具有减小的第二直径的金属纤维的装置和方法。 进给机构以第一线速度移动线。 激光束将导线的区域加热到升高的温度。 牵引机构以第二和更大的线速度牵引加热的线，以提供具有减小的第二直径的拉伸金属纤维。

公开(公告)号：US07013695B2

公开(公告)日：2006-03-21

申请号：US10828711

申请日：2004-04-20

申请人： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

发明人： Nathaniel R. Quick ,  Aravinda Kar ,  Yonggang Li ,  Raymond R. McNeice

IPC分类号： B21D37/16

CPC分类号： B21C37/042 ,  B21C1/003 ,  B21C1/02 ,  B21C1/12 ,  B21C37/047 ,  Y10S72/70

摘要： An apparatus and method is disclosed for drawing continuous metallic wire having a first diameter to a metallic fiber having a reduced second diameter. A feed mechanism moves the wire at a first linear velocity. A laser beam heats a region of the wire to an elevated temperature. A draw mechanism draws the heated wire at a second and greater linear velocity for providing a drawn metallic fiber having the reduced second diameter.

摘要翻译： 公开了一种用于将具有第一直径的连续金属丝拉制成具有减小的第二直径的金属纤维的装置和方法。 进给机构以第一线速度移动线。 激光束将导线的区域加热到升高的温度。 牵引机构以第二和更大的线速度牵引加热的线，以提供具有减小的第二直径的拉伸金属纤维。

公开(公告)号：US08912549B2

公开(公告)日：2014-12-16

申请号：US13068129

申请日：2011-05-03

申请人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

发明人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

IPC分类号： H01L21/322 ,  H01L31/0312 ,  H01L31/0352 ,  G01J5/08 ,  G01K11/12 ,  H01L21/268 ,  G01J5/58

CPC分类号： H01L21/268 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/58 ,  G01K11/125 ,  H01L21/02678

摘要： An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

摘要翻译： 公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。 通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。 热能束限定光学装置的光学和物理性质。 光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性 可选电极 本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

公开(公告)号：US08772061B2

公开(公告)日：2014-07-08

申请号：US13135742

申请日：2011-07-14

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： H01L21/00 ,  H01L21/04

CPC分类号： H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

摘要： A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts.

摘要翻译： 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。

公开(公告)号：US08722451B2

公开(公告)日：2014-05-13

申请号：US13135736

申请日：2011-07-14

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： H01L21/00

CPC分类号： H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

摘要： A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

摘要翻译： 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。