公开(公告)号：US07495302B2

公开(公告)日：2009-02-24

申请号：US11072859

申请日：2005-03-03

申请人： Frank Fischer ,  Hans Artmann ,  Lars Metzger ,  Arnim Hoechst ,  Julian Gonska

发明人： Frank Fischer ,  Hans Artmann ,  Lars Metzger ,  Arnim Hoechst ,  Julian Gonska

IPC分类号： H01L27/00

CPC分类号： B81B7/0029 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0109

摘要： A micromechanical component having a diaphragm is provided, the structure of which effectively prevents the penetration of dirt particles into the cavity. A method for manufacturing such a component is also provided. The structure of the component is implemented in a layer structure which includes at least one first sacrificial layer and a layer system over the first sacrificial layer. A cavity is formed in the first sacrificial layer underneath the diaphragm. In the region of the diaphragm between the upper layer and the lower layer of the layer system situated directly above the first sacrificial layer, at least one access channel to the cavity is formed which has at least one opening in the upper layer and at least one opening in the lower layer, the opening in the upper layer and the opening in the lower layer being offset with respect to each other.

摘要翻译： 提供了具有隔膜的微机械部件，其结构有效地防止了灰尘颗粒进入空腔。 还提供了制造这种部件的方法。 组件的结构以包括至少一个第一牺牲层和第一牺牲层上的层系统的层结构来实现。 在隔膜下方的第一牺牲层中形成空腔。 在位于第一牺牲层正上方的层系统的上层和下层之间的隔膜区域中，形成至少一个到空腔的通道，其在上层中具有至少一个开口，并且至少一个开口 在下层中开口，上层中的开口和下层中的开口相对于彼此偏移。

公开(公告)号：US09266721B2

公开(公告)日：2016-02-23

申请号：US13989411

申请日：2010-11-23

申请人： Andreas Pruemm ,  Karl-Heinz Kraft ,  Thomas Mayer ,  Arnim Hoechst ,  Christoph Schelling

发明人： Andreas Pruemm ,  Karl-Heinz Kraft ,  Thomas Mayer ,  Arnim Hoechst ,  Christoph Schelling

IPC分类号： H01L21/768 ,  B81C1/00 ,  B81C3/00 ,  B81B7/00 ,  H01L21/683 ,  G01L19/00 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/125 ,  H01L23/00 ,  H01L25/065

CPC分类号： B81C1/00301 ,  B81B7/007 ,  B81C3/008 ,  B81C2203/035 ,  B81C2203/051 ,  G01L9/0048 ,  G01L19/0076 ,  G01P15/0802 ,  G01P15/123 ,  G01P15/125 ,  G01P2015/084 ,  H01L21/6835 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/056 ,  H01L2224/13025 ,  H01L2224/13124 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/81805 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/00

摘要： A method for producing a semiconductor component (166) is proposed. The method comprises the following steps: a) a semiconductor chip (110) is produced on a starting substrate (112), wherein the semiconductor chip (110) is connected to the starting substrate (112) in at least one supporting location (116), wherein the semiconductor chip (110) has a front side (130) facing away from the starting substrate (112) and a rear side (132) facing the starting substrate (112), b) in at least one through-plating step, at least one through-contact filling material (142) is applied to the semiconductor chip (110), wherein at least one partial region (140) of the rear side (132) is coated with the through-contact filling material (142), c) the semiconductor chip (110) is separated from the starting substrate (112), and d) the semiconductor chip (110) is applied to at least one carrier substrate (150), wherein that partial region (140) of the rear side (132) of the semiconductor chip (110) which is coated with the through-contact filling material (142) is connected to at least one bonding pad (152) on the carrier substrate (150).

摘要翻译： 提出了一种制造半导体部件（166）的方法。 该方法包括以下步骤：a）在起始衬底（112）上制造半导体芯片（110），其中半导体芯片（110）在至少一个支撑位置（116）中连接到起始衬底（112） ，其中所述半导体芯片（110）具有面向所述起始衬底（112）的前侧（130）和面对所述起始衬底（112）的后侧（132），b）在至少一个穿镀步骤中， 至少一个通孔接触填充材料（142）被施加到半导体芯片（110），其中后侧（132）的至少一个部分区域（140）涂覆有通孔填充材料（142）， c）将半导体芯片（110）与起始衬底（112）分离，并且d）将半导体芯片（110）施加到至少一个载体衬底（150），其中后侧的部分区域（140） 连接有被通孔接触填充材料（142）涂覆的半导体芯片（110）的电极（132） 到载体衬底（150）上的至少一个焊盘（152）。

公开(公告)号：US08481427B2

公开(公告)日：2013-07-09

申请号：US11921999

申请日：2006-04-27

申请人： Hans Artmann ,  Andrea Urban ,  Arnim Hoechst

发明人： Hans Artmann ,  Andrea Urban ,  Arnim Hoechst

IPC分类号： H01L21/302

CPC分类号： B81C1/00595 ,  B81B2203/0315 ,  Y10T428/24562

摘要： A micromechanical method for manufacturing a cavity in a substrate, and a micromechanical component manufactured with this method. In this method, in a first step a first layer is produced on or in a substrate. At least one second layer is then applied onto the first layer. An access hole is produced in this second layer. Material of the first layer and of the substrate can be dissolved out through this hole, so that a cavity is produced in the substrate beneath at least a portion of the second layer. This second layer above the cavity can subsequently be used as a membrane. In addition, the possibility also exists of depositing further layers onto the second layer, only the totality of which layers constitutes the membrane. The material of the first layer is selected so that dissolving out the material of the first layer produces a transition edge in the first layer, which edge at is at a predefinable angle between the substrate and the second layer.

摘要翻译： 用于制造衬底中的空腔的微机械方法和用该方法制造的微机械部件。 在该方法中，在第一步骤中，在衬底上或衬底中产生第一层。 然后将至少一个第二层施加到第一层上。 在该第二层中产生通孔。 可以通过该孔将第一层和基底的材料溶解出来，从而在第二层的至少一部分下面的衬底中产生空腔。 随后可以将空腔上方的第二层用作膜。 此外，还存在将另外的层沉积到第二层上的可能性，仅这些层的总体构成膜。 选择第一层的材料，使得溶解第一层的材料在第一层中产生过渡边缘，该边缘处于基板和第二层之间的预定角度。

公开(公告)号：US20120091545A1

公开(公告)日：2012-04-19

申请号：US13262905

申请日：2010-04-06

申请人： Frank Reichenbach ,  Arnim Hoechst ,  Thomas Buck

发明人： Frank Reichenbach ,  Arnim Hoechst ,  Thomas Buck

IPC分类号： H01L29/84

CPC分类号： B81B3/0008 ,  B81B2201/0257 ,  H04R19/005 ,  H04R19/016

摘要： A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the deflectable electrode and the counter electrode of the microphone capacitor. In order to not impair the functionality of this semiconductor component, even during overload situations in which contact occurs between the diaphragm and the counter electrode, the deflectable electrode and the counter electrode of the microphone capacitor are counter-doped, at least in places, so that they form a diode in the event of contact. In addition, the polarity of the charging voltage between the deflectable electrode and the counter electrode is such that the diode is switched in the blocking direction.

摘要翻译： 实现具有微机械麦克风结构的半导体部件的简单和成本有效的形式，包括作为麦克风电容器的可偏转电极的声学活动光圈，作为麦克风电容器的对电极的静止的，声学可渗透的反射器，以及用于 在麦克风电容器的可偏转电极和对电极之间施加充电电压。 为了不损害该半导体元件的功能，即使在隔膜和对电极之间发生接触的过载情况下，麦克风电容器的可偏转电极和对电极至少在某些地方相互掺杂 它们在接触的情况下形成二极管。 此外，可偏转电极和对电极之间的充电电压的极性使得二极管在阻挡方向上被切换。

公开(公告)号：US07435991B2

公开(公告)日：2008-10-14

申请号：US10588838

申请日：2004-12-20

申请人： Hans-Peter Baer ,  Arnim Hoechst

发明人： Hans-Peter Baer ,  Arnim Hoechst

IPC分类号： H01L23/58

CPC分类号： B81C1/00182 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C2201/0178

摘要： A micromechanical sensor and a method for manufacturing same are described. A secure diaphragm restraint, independent of fluctuations in the cavern etching process due to the process technology, and a free design of the diaphragm are made possible by designing a suitable connection of the diaphragm in an oxide layer created by local oxidation. The micromechanical sensor includes, for example, a substrate, an external oxide layer formed in a laterally external area in the substrate, a diaphragm having multiple perforation holes formed in a laterally internal diaphragm area, a cavern etched in the substrate beneath the diaphragm, whereby the diaphragm is suspended in a suspension area of the external oxide layer which tapers toward connecting points of the diaphragm and the diaphragm is situated in its vertical height between a top side and a bottom side of the external oxide layer.

摘要翻译： 描述了一种微机械传感器及其制造方法。 通过设计通过局部氧化产生的氧化物层中的隔膜的适当连接，可以实现由于工艺技术而独立于洞穴蚀刻工艺的波动和隔膜的自由设计的安全膜片约束。 微机械传感器包括例如基板，形成在基板的横向外部区域中的外部氧化物层，具有形成在横向内部隔膜区域中的多个穿孔的隔膜，在隔膜下方的基板中蚀刻的基底，由此 隔膜悬挂在外部氧化物层的悬垂区域中，该外部氧化物层朝向隔膜的连接点逐渐变细，并且隔膜位于外部氧化物层的顶侧和底侧之间的垂直高度。