Abstract:
A touch structure, a manufacturing method thereof and a touch device are provided, the touch structure includes a first touch electrode and a second touch electrode which are intersected with each other and insulated from each other, the second touch electrode includes a plurality of electrode patterns spaced apart from each other and a plurality of connection patterns spaced apart from each other, each connection pattern connects together the electrode patterns which are adjacent to the connection pattern, and each connection pattern includes a grid pattern.
Abstract:
The present application discloses a touch substrate and a manufacturing method thereof, and a touch screen. The touch substrate has a touch area and a function-hole area and includes a base substrate and a light shielding pattern which defines the touch area and the function-hole area. The touch substrate further includes a touch unit and a first blanking pattern arranged in the touch area and a first insulating layer, a second blanking pattern and a transmission enhancement pattern arranged in the function-hole area. The first blanking pattern and the second blanking pattern are arranged in a same layer, and the transmission enhancement pattern is configured to increase a light transmittance of an area corresponding to the second blanking pattern.
Abstract:
A test circuit, a test method, an array substrate and a manufacturing method thereof are provided. The test circuit includes a plurality of to-be-tested units and plurality of test electrodes connected to the to-be-tested units. The plurality of to-be-tested units are arranged in a matrix. At least one of the test electrodes is multiplexed by the plurality of to-be-tested units in a row direction and at least one of the test electrodes is multiplexed by the plurality of to-be-tested units in a column direction.
Abstract:
Disclosed are a thin film transistor and a manufacture method thereof. The thin film transistor according to the embodiments of the present disclosure comprises: a base substrate; an active layer composed of polysilicon on the base substrate; and a first gate insulating layer having a preset intrinsic tensile stress on the active layer.
Abstract:
A test circuit, a test method, an array substrate and a manufacturing method thereof are provided. The test circuit includes a plurality of to-be-tested units and plurality of test electrodes connected to the to-be-tested units. The plurality of to-be-tested units are arranged in a matrix. At least one of the test electrodes is multiplexed by the plurality of to-be-tested units in a row direction and at least one of the test electrodes is multiplexed by the plurality of to-be-tested units in a column direction.
Abstract:
An array substrate, a method for fabricating the same, a display panel and a display device are disclosed. The array substrate comprises a display area and a non-display area that is outside the display area. The method comprises: forming a metal layer on a base substrate, the metal layer comprising a conductive pattern in the display area and a first electrode in the non-display area; forming a protective layer on the metal layer, a thickness of the protection layer in the non-display area being less than a thickness of the protection layer in the display area; forming a display electrode layer on the protection layer and removing the display electrode layer in the non-display area; and removing the protection layer in the non-display area.
Abstract:
Disclosed are a quantum dot material, a quantum dot light emitting device, a display apparatus and a manufacturing method. The quantum dot material includes: a quantum dot, an anionic ligand, and a linking group linking the quantum dot and the anionic ligand, wherein the anionic ligand is configured to bind to a ring molecule by electrostatic force.
Abstract:
Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.
Abstract:
Disclosed are a QLED display panel and a preparation method thereof and a display apparatus. The QLED display panel includes: a base substrate; a second electrode, an electron transport layer, a quantum dot luminescent layer, a hole transport layer, a hole injection layer, and a first electrode disposed sequentially on the base substrate; and the QLED display panel further including: a first ionic coordination compound layer between the quantum dot luminescent layer and the hole transport layer.
Abstract:
The present disclosure relates to a display panel, a method for preparing the same and a display device. The display panel includes a first electrode, a light emitting structure, a second electrode and a scattering layer stacked in sequence. The second electrode is a transparent electrode. One side of the scattering layer away from the second electrode is configured as a light emergent side. The surface of the one side of the scattering layer away from the second electrode is a rough surface, and the RMS of the roughness of the rough surface ranges from 50 nm to 200 nm.