公开(公告)号：US20220344517A1

公开(公告)日：2022-10-27

申请号：US17763297

申请日：2021-04-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Zhengliang Li ,  Ce Ning ,  Hehe Hu ,  Nianqi Yao ,  Kun Zhao ,  Fengjuan Liu ,  Tianmin Zhou ,  Liping Lei

IPC: H01L29/786

Abstract: A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.

公开(公告)号：US11257954B2

公开(公告)日：2022-02-22

申请号：US16959179

申请日：2019-11-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Hehe Hu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417

Abstract: Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.

公开(公告)号：US20210359063A1

公开(公告)日：2021-11-18

申请号：US16330719

申请日：2018-09-11

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xinhong Lu ,  Ke Wang ,  Hehe Hu ,  Ce Ning ,  Wei Yang

IPC: H01L27/32 ,  H01L29/786

Abstract: An array substrate includes a base substrate; a first thin film transistor on the base substrate and including a first active layer, a first gate electrode, a first source electrode and a first drain electrode; a second thin film transistor on the base substrate and including a second active layer, a second gate electrode, a second source electrode and a second drain electrode; a first gate insulating layer between the first active layer and the first gate electrode; and a second gate insulating layer between the second active layer and the second gate electrode, the second gate insulating layer being different from the first gate insulating layer. The first source electrode, the first drain electrode, and the second gate electrode are in a same layer. The first source electrode and the first drain electrode are on a side of the second gate insulating layer distal to the base substrate.

公开(公告)号：US20210331168A1

公开(公告)日：2021-10-28

申请号：US16605776

申请日：2019-05-06

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Hehe Hu

IPC: B01L3/00 ,  G01N27/12

Abstract: A biosensor apparatus is provided. The biosensor apparatus includes a base substrate; a first fluid channel layer on the base substrate and having a first fluid channel passing therethrough; a foundation layer on a side of the first fluid channel layer away from the base substrate, a foundation layer throughhole extending through the foundation layer to connect to the first fluid channel; and a micropore layer on a side of the foundation layer away from the base substrate, a micropore extending through the micropore layer to connect to the first fluid channel through the foundation layer throughhole. The micropore layer extends into the foundation layer throughhole and at least partially covers an inner wall of the foundation layer throughhole.

公开(公告)号：US11004980B2

公开(公告)日：2021-05-11

申请号：US16327208

申请日：2018-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423

Abstract: Disclosed are a thin film transistor and a manufacturing method therefor, an array substrate, a display panel and a display device. The thin film transistor includes a base substrate; a first electrode on the base substrate; a second electrode on the first electrode; an active layer provided on the base substrate and connecting the first electrode with the second electrode; and a gate electrode on the base substrate. The base substrate includes an upper surface facing towards the first electrode, the active layer includes a first side surface extending in a direction intersecting the upper surface of the base substrate, the first side surface connects the first electrode with the second electrode, and the gate electrode surrounds the first side surface.

公开(公告)号：US10332987B2

公开(公告)日：2019-06-25

申请号：US15554446

申请日：2017-01-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ce Ning ,  Wei Yang ,  Hehe Hu

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/77 ,  H01L21/426 ,  H01L21/44 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/786 ,  H01L21/465 ,  H01L21/425

Abstract: A thin film transistor, a manufacturing method for an array substrate, the array substrate, and a display device are provided. The manufacturing method for a thin film transistor includes: forming a semiconductor layer; performing a modification treatment on a surface layer of a region of the semiconductor layer, so that the region of the semiconductor layer has a portion in a first direction perpendicular to the semiconductor layer formed as an etching blocking layer, portions of the semiconductor layer on both sides of the etching blocking layer in a second direction parallel to a surface of the semiconductor layer remaining unmodified; and forming a source electrode and a drain electrode on the semiconductor layer, the source electrode and the drain electrode being formed on both sides of a center line of the region perpendicular to the second direction, and spaced from each other in the second direction.

公开(公告)号：US09583517B2

公开(公告)日：2017-02-28

申请号：US14785719

申请日：2015-04-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/77 ,  H01L29/786 ,  H01L29/10 ,  H01L21/465 ,  H01L21/469 ,  H01L21/477 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/465 ,  H01L21/469 ,  H01L21/477 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/10 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: This invention provides a polycrystalline oxide thin-film transistor (TFT) array substrate and a method of manufacturing the same. As the polycrystalline oxide thin film layer of the polycrystalline oxide TFT array substrate is formed by a two-step process according to the present invention, the ultra-high temperature annealing process required in the prior art is obviated, and the object of producing a polycrystalline oxide TFT array substrate by the existing manufacturing facilities of the amorphous oxide TFT array substrates is achieved without adding any special equipment or special operation, and it is easy to implement; meanwhile, the energy consumption is reduced as the high temperature annealing is no longer needed.

Abstract translation: 本发明提供一种多晶氧化物薄膜晶体管（TFT）阵列基板及其制造方法。 通过本发明的两步法形成多晶氧化物TFT阵列基板的多晶氧化物薄膜层，省略了现有技术中所需的超高温退火工艺，其目的在于， 通过现有的无定形氧化物TFT阵列基板的制造设备，不需要特殊的设备或特殊的操作即可实现氧化物TFT阵列基板，而且易于实现; 同时，不再需要高温退火，能量消耗减少。

公开(公告)号：US20250159931A1

公开(公告)日：2025-05-15

申请号：US19024444

申请日：2025-01-16

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Hehe Hu ,  Tianmin Zhou ,  Jipeng Song

IPC: H10D30/67

Abstract: The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor comprising: a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer comprising a plurality of semiconductor branches; a plurality of source electrode branches, wherein the plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.

公开(公告)号：US20250142886A1

公开(公告)日：2025-05-01

申请号：US18686647

申请日：2021-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai Yuan ,  Lingyan Liang ,  Hongtao Cao ,  Fengjuan Liu ,  Ce Ning ,  Fei Wang ,  Hehe Hu ,  Hengbo Zhang

IPC: H10D30/67 ,  H10D62/10 ,  H10D86/40

Abstract: A thin film transistor includes a substrate; and a semiconductor layer a gate, a source electrode and a drain electrode; which are arranged on the substrate. The semiconductor layer includes a first material layer and a second material layer which are stacked, wherein a material of the first material layer is selected from one of or a combination of first n-type metal oxide semiconductor materials, and a material of the second material layer is selected from one of or a combination of second n-type metal oxide semiconductor materials. A carrier mobility of a first n-type metal oxide semiconductor material is greater than or equal to 40 cm2/Vs, and a second n-type metal oxide semiconductor material is doped with Y, Y being selected from one of or a combination of rare earth elements. The first material layer is closer to the gate than the second material layer.

公开(公告)号：US12272754B2

公开(公告)日：2025-04-08

申请号：US17761549

申请日：2021-05-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Zhi Wang ,  Feng Guan

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

Abstract: A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.