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    Display substrate, display device and method of forming display substrate
    1.
    发明授权
    Display substrate, display device and method of forming display substrate 有权

    公开(公告)号：US11372451B2

    公开(公告)日：2022-06-28

    申请号：US16900647

    申请日：2020-06-12

    Applicant: BOE TECHNOLOGY GROUP CO., LTD.

    Inventor： Jiayu He ,  Xue Liu ,  Hehe Hu ,  Zhengliang Li

    IPC: G09F9/30 ,  G06F1/16 ,  G06F1/18

    Abstract: A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.

    Thin film transistor with silicon nanowire channel, display substrate, and display device
    2.
    发明授权
    Thin film transistor with silicon nanowire channel, display substrate, and display device 有权

    公开(公告)号：US12272754B2

    公开(公告)日：2025-04-08

    申请号：US17761549

    申请日：2021-05-18

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Zhi Wang ,  Feng Guan

    IPC: H01L29/786 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

    Abstract: A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

    Array substrate and manufacturing method therefor, and display apparatus
    4.
    发明授权
    Array substrate and manufacturing method therefor, and display apparatus 有权

    公开(公告)号：US12298641B2

    公开(公告)日：2025-05-13

    申请号：US18638710

    申请日：2024-04-18

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Guangcai Yuan ,  Hehe Hu ,  Ce Ning ,  Hui Guo ,  Fengjuan Liu ,  Dongfang Wang ,  Zhengliang Li ,  Jiayu He

    IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

    Abstract: An array substrate and a manufacturing method therefor, and a display apparatus are provided. The array substrate includes an underlay substrate, and at least one first transistor, at least one data line and at least one pixel electrode disposed on the underlay substrate. The at least one first transistor includes a first active layer and a first gate; the first gate is located on a side of the first active layer away from the underlay substrate, and orthographic projections of the first gate and the first active layer on the underlay substrate are at least partially overlapped. The first active layer is electrically connected to the data line and the pixel electrode, respectively. The data line is located on a side of the first active layer close to the underlay substrate, and the pixel electrode is located on a side of the first gate away from the underlay substrate.

    Thin film transistor and array substrate each having active layer comprising multiple oxide layers arranged in a stack
    7.
    发明授权
    Thin film transistor and array substrate each having active layer comprising multiple oxide layers arranged in a stack 有权

    公开(公告)号：US12300753B2

    公开(公告)日：2025-05-13

    申请号：US17780877

    申请日：2021-05-27

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

    IPC: H01L29/786 ,  H01L27/12

    Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

    Array substrate, flat panel detector, and method for manufacturing array substrate
    8.
    发明授权
    Array substrate, flat panel detector, and method for manufacturing array substrate 有权

    公开(公告)号：US12068355B2

    公开(公告)日：2024-08-20

    申请号：US17410677

    申请日：2021-08-24

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

    IPC: H01L27/146 ,  H01L27/12

    CPC classification number: H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

    Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

    Thin Film Transistor and Manufacturing Method Thereof, and Array Substrate and Electronic Device
    10.
    发明申请
    Thin Film Transistor and Manufacturing Method Thereof, and Array Substrate and Electronic Device 有权

    公开(公告)号：US20230015871A1

    公开(公告)日：2023-01-19

    申请号：US17780877

    申请日：2021-05-27

    Applicant: BOE Technology Group Co., Ltd.

    Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

    IPC: H01L29/786 ,  H01L27/12

    Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

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