公开(公告)号：US12107203B2

公开(公告)日：2024-10-01

申请号：US17465689

申请日：2021-09-02

申请人： BOE Technology Group Co., Ltd.

发明人： Song Liu ,  Zhengliang Li ,  Kun Zhao ,  Feifei Li ,  Qi Qi

IPC分类号： H01L33/62 ,  H01L25/075 ,  H01L33/56

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L33/56

摘要： Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.

公开(公告)号：US12068355B2

公开(公告)日：2024-08-20

申请号：US17410677

申请日：2021-08-24

申请人： BOE Technology Group Co., Ltd.

发明人： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

IPC分类号： H01L27/146 ,  H01L27/12

CPC分类号： H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

摘要： An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20230091604A1

公开(公告)日：2023-03-23

申请号：US17611156

申请日：2021-01-28

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66

摘要： The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20240261785A1

公开(公告)日：2024-08-08

申请号：US18018795

申请日：2021-12-31

申请人： BOE Technology Group Co., Ltd.

发明人： Feifei Li ,  Bolin Fan ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Nianqi Yao ,  Jiayu He ,  Jie Huang ,  Kun Zhao

IPC分类号： B01L3/00

CPC分类号： B01L3/502761 ,  B01L2200/0647 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0848 ,  B01L2400/0415

摘要： Provided is a micro-nano fluidic substrate, a chip, a preparation method, and a system. The micro-nano fluidic substrate includes: a base; an electrode layer located on the base, the electrode layer includes a first electrode, a second electrode, and a control electrode; and a film layer located on the electrode layer and far away from the base, the film layer includes a groove layer, a nano-channel and a micro-channel, the groove layer includes a first groove, the nano-channel is located in the first groove, an orthographic projection of the nano-channel on the base at least partially coincides with an orthographic projection of the control electrode on the base, and the micro-channel is in communication with the nano-channel, the micro-channel includes a first micro-channel and a second micro-channel, and the first micro-channel is in communication with the first electrode, the second micro-channel is in communication with the second electrode.

公开(公告)号：US20240186379A1

公开(公告)日：2024-06-06

申请号：US17798347

申请日：2021-10-22

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Hehe Hu ,  Fengjuan Liu ,  Guangcai Yuan ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Kun Zhao

IPC分类号： H01L29/10 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/1041 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.

公开(公告)号：US20230006070A1

公开(公告)日：2023-01-05

申请号：US17782035

申请日：2021-05-27

申请人： BOE Technology Group Co., Ltd.

发明人： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Kun Zhao ,  Feng Qu ,  Xiaochun Xu

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/12

摘要： A semiconductor substrate manufacturing method and a semiconductor substrate. The manufacturing method includes: forming a first semiconductor layer on the base substrate at a first temperature with a first oxide semiconductor material; forming the second semiconductor layer directly on the first semiconductor layer with a second oxide semiconductor material; and performing a patterning process such that the first semiconductor layer and the second semiconductor layer are respectively patterned into a seed layer and a first channel layer. Both the first oxide semiconductor material and the second oxide semiconductor material are capable of forming crystalline phases at a second temperature, the second temperature is less than or equal to 40° C., and the first temperature is greater than or equal to 100° C.

公开(公告)号：US20220344517A1

公开(公告)日：2022-10-27

申请号：US17763297

申请日：2021-04-30

申请人： BOE Technology Group Co., Ltd.

发明人： Jie Huang ,  Zhengliang Li ,  Ce Ning ,  Hehe Hu ,  Nianqi Yao ,  Kun Zhao ,  Fengjuan Liu ,  Tianmin Zhou ,  Liping Lei

IPC分类号： H01L29/786

摘要： A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.